Kutheni kufuneka sisebenzise iGe njengeisixhobo sokubona iifoto
1, Indawo esisiseko: Kutheni kuyimfuneko ukusebenzisa iGe njengesixhobo sokubona iifoto
Kwii-silicon optical links, i-photodetector "ngabaguquleli" abaguqula i-optical signals babuyele kwi-electrical signals. Nangona kunjalo, i-silicon ngokwayo ine-bandgap ye-1.12 eV kwaye iphantse ibonakale kwiibhendi zonxibelelwano ze-1310/1550 nm, ngoko ke yi-germanium (Ge) kuphela enokungeniswa.
I-Ge ine-bandgap ethe ngqo ye-0.8 eV, egubungela i-communication O/C band, kodwa ine-lattice mismatch ye-4.2% ne-silicon. Uxinano lwe-dislocation lokukhula ngokuthe ngqo luphezulu njenge-4 × 10 ⁸ cm ⁻ ², kwaye umbane omnyama awufumaneki kwaphela; Kwangaxeshanye, i-Ge ine-bandgap engathanga ngqo, kwaye i-absorption coefficient yayo ngokwendalo iphantsi kakhulu kune-InGaAs, nto leyo ebuthathaka ngokwendalo.
2, Impumelelo engundoqo: ukuhlanganiswa kwe-waveguide kuyaphula i-bottleneck yokusebenza
"Ubude bokufunxa = indlela yokuqokelela umthwali" wezixhobo zokufota ezithe nkqo zemveli zine-"bandwidth yokuphendula", enomda ophezulu we-7GHz kuphela;
Okwangoku, iindlela eziphambili zezixhobo zahlulwe zibe ziindidi ezintathu:
Iphini ethe nkqo: Le nkqubo yeyona ilula kwaye iphambili kushishino, ifikelela kwi-40Gb/s @ zero bias kunye ne-bandwidth engaphezulu kwe-60GHz;
I-MSM Metal Semiconductor Metal: Akukho mfuneko yokusebenzisa i-doping yobushushu obuphezulu, ingadibaniswa kwi-backend, inomsinga omnyama ophezulu, kunye ne-bandwidth engaphezulu kwe-40GHz;
Iindidi eziphezulu:Izixhobo zokubona amaza ezihambayo(TWPD) kunye nee-photodetectors ze-single line carrier (UTC) zisetyenziselwa ii-microwave photon links, ezilungelelanisa i-bandwidth ephezulu kunye ne-photocurrent ephezulu.
3, Izixhobo kunye noBugcisa: Ukuguqula 'Iimpazamo' zibe Ziingenelo
Ukuphendula ukungalingani kwe-lattice kunye nokusilela kokusebenza, eli shishini liphuhlise izisombululo ezivuthiweyo:
Indlela ye-epitaxy enamanyathelo amabini: okokuqala, kukhuliswa umaleko we-buffer obushushu obuphantsi obuyi-30-50nm, uze emva koko ubushushu bunyuswe ukuze bufikelele kubukhulu obujoliswe kubo, nto leyo enciphisa uxinano lwe-dislocation ukuya kwi-~10 ⁷ cm ⁻ ²;
Ubunjineli boxinzelelo: Umahluko kwii-coefficients zokwandiswa kobushushu phakathi kweGe kunye neSi uza kubangela uxinzelelo lwe-0.2% biaxial tensile kwifilimu yeGe, nto leyo ekhokelela ekunciphiseni i-band gap ngqo ukusuka kwi-0.8 eV ukuya kwi-0.77 eV kunye nolwandiso lomphetho wokufunxa ukusuka kwi-1.55 μ m ukuya kwi-1.61 μ m, olugubungela lonke i-C+L band, kwaye kwane-absorption coefficient kwi-L band ingalingana neye-InGaAs;
Ukuhlanganiswa kwe-CMOS: Kusesekwinqanaba lokuhlola. Ukuhlanganiswa kwe-front end (FEOL) kufuneka kumelwane namaqondo obushushu aphezulu angaphezulu kwe-750 ℃, ngelixa ukuhlanganiswa kwe-back-end (BEOL) kulungele amaqondo obushushu kodwa ngaphandle kwe-crystal substrates, kwaye ayikasenzi isisombululo esivuthiweyo esihlangeneyo. Okwangoku, eli shishini ngokubanzi lisebenzisa indlela exutyiweyo ye-"90% single-chip+external".ileza".
Ixesha leposi: Juni-23-2026