I-Rof Intensity Modulator i-thin film lithium niobate modulator 40G TFLN modulator

Inkcazo emfutshane:

Izinto ze-thin film lithium niobate on insulator (LNOI) zizuza iipropati ze-electro-optic ezibalaseleyo zezinto ze-bulk lithium niobate, zibonelela ngesisombululo esitsha see-high-speed electro-optic modulator chips ezinokudityaniswa, zenziwe zibe zincinci, kwaye zibe nokusebenza kakuhle kwe-modulation. Siphuhlise i-wideband, i-low half wave voltage thin film LiNbO3 electro-optic modulator esekelwe kwizinto ze-LNOI. Imveliso yethu ineempawu ezintle kakhulu zokuzinza okuphezulu, ukulahleka okuphantsi kokufakwa, kunye nobukhulu obuncinci, obunenzuzo ngakumbi kunee-bulk material lithium niobate modulators zemveli, kwaye zinamathuba amaninzi okusetyenziswa kwiindawo zonxibelelwano lwe-optical olukhawulezayo kunye nee-microwave photonics.

Thumela i-imeyile kuthi KHUPHELA

Iinkcukacha zeMveliso

I-Rofea Optoelectronics inikezela ngeemveliso ze-Optical kunye ne-photonics ze-Electro-optic modulators

Iithegi zeMveliso

Uphawu

Ibhendi ephezulu, ilahleko ephantsi, i-voltage ephantsi yokuqhuba, ubungakanani obuncinci, uzinzo oluphezulu

Intsimi

Unxibelelwano olukhawulezayo lwe-optical, ii-photonics ze-microwave, i-radar, njl.

I-Rof EOM Intensity Modulator 20G ifilimu encinci ye-lithium niobate modulator TFLN modulator

Ipharamitha

Pi-aramayitha	Sym	isalathisi	Iyunithi
ubude bexesha obusebenzayo	λ	1530~1565	nm
Ukulahleka kokufakwa kokukhanya	IL	≤ 5.5 (Uhlobo 4.5)	dB
umlinganiselo wokuphela	ER	≥ 25	dB
Ukulahleka kokubuya kwe-Optical	RL	≤ -30	dB
Amandla aphezulu okufaka optical	P_in	≤ 200	mW
I-bandwidth ye-electro optic modulation (3dB, ukusuka kwi-2GHz)	BW	≥ 40	I-GHz
I-RF isiqingatha se-wave voltage @ 50KHz	I-Vπ	≤ 3.5	V
Ukubonakaliswa kweRF	S₁₁	≤ -10	dB
Amandla okufaka aphezulu e-RF	S_in	≤ 25	i-dBm
Amandla e-Thermal bias isiqingatha se-wave	I-Pπ	50	mW
I-voltage ye-Thermal bias	U_isifudumezi	< 8	V
Ubushushu bokusebenza	T_O	-55~85	℃
Ubushushu bokugcina	T_S	-55~85	℃

Ulwazi lwe-odolo

Sym	Dinkcazo	Ipharamitha ekhethiweyo
λ	ubude bexesha obusebenzayo	I-C (~1550nm)，O (~1310nm)
BW	Ibhendi ye-3dB	40(40GHz)
PD	Ukubeka iliso kwiPD	1 (idibeneyo), 0 (ayidityanisiwe)
IF	I-fiber optic yokufaka	I-P (i-polarization egcina ifayibha)
OF	I-optic ye-fiber yemveliso	I-P (ifayibha yokugcina i-polarisation), i-S (ifayibha yemowudi enye eqhelekileyo)
S	Isiqingatha se-voltage yamaza	Umgangatho we-S

Ubungakanani bephakheji kunye nencazelo yephini

Pkwinkcazo:

Sitshizi	Fukukhululwa
RF	Igalelo le-RF, intloko yabasetyhini eyi-1.85mm
A	I-electrode ye-thermostatic bias (elungileyo nengalunganga)
B	I-electrode ye-thermostatic bias
C	I-electrode yokulungisa ubushushu obuphantsi kwe-backup
D	I-electrode yokulungisa ubushushu obuphantsi kwe-backup

Ngaphambili: I-Rof 2000nm I-modulator yesigaba se-electro-optic yesantya esiphezulu ye-2um

Okulandelayo: I-ROF Si i-adjustable gain photodetector i-Silicon Photodetector

I-Rofea Optoelectronics inikezela ngoluhlu lwemveliso lwee-electro-optic modulators zorhwebo, ii-Phase modulators, i-Intensity modulator, ii-Photodetectors, imithombo yokukhanya kweLaser, ii-DFB lasers, ii-Optical amplifiers, i-EDFA, i-SLD laser, i-QPSK modulation, i-Pulse laser, i-Light detector, i-Balanced photodetector, i-Laser driver, i-Fiber optic amplifier, i-Optical power meter, i-Broadband laser, i-Tunable laser, i-Optical detector, i-Laser diode driver, i-Fiber amplifier. Sikwabonelela ngee-modulators ezininzi ezithile zokwenza ngokwezifiso, ezinje ngee-1*4 array phase modulators, i-ultra-low Vpi, kunye nee-ultra-high extinction ratio modulators, ezisetyenziswa kakhulu kwiiyunivesithi nakwii-institutions.
Ndiyathemba ukuba iimveliso zethu ziya kuba luncedo kuwe nakuphando lwakho.

Iimveliso eziNxulumeneyo