I-Rof TFLN modulator 110G Intensity Modulator thin film lithium niobate modulator

Inkcazo emfutshane:

I-thin-film lithium niobate ultra-high bandwidth intensity modulator sisixhobo sokuguqula i-electro-optical esisebenza ngokuzimeleyo nesiphethwe yinkampani yethu amalungelo obunini bobukrelekrele obuzimeleyo. Le mveliso ipakishwe ngetekhnoloji yenkqubo yokudibanisa echanekileyo, ifikelela kwi-bandwidth ephezulu ye-electro-optical ye-3dB 110GHz electro-optical modulation rate. Xa ithelekiswa nee-lithium niobate crystal modulators zemveli, le mveliso ine-voltage ephantsi ye-half-wave kunye nozinzo oluphezulu.

Iimpawu zobukhulu besixhobo esincinci kunye nolawulo lwe-thermo-optical bias zingasetyenziswa ngokubanzi kunxibelelwano lwe-digital optical, kwi-microwave photonics, nakwiinethiwekhi zonxibelelwano lwe-backbone Kunye nakwiindawo ezifana neeprojekthi zophando lwesayensi olunxulumene nonxibelelwano.


Iinkcukacha zeMveliso

I-Rofea Optoelectronics inikezela ngeemveliso ze-Optical kunye ne-photonics ze-Electro-optic modulators

Iithegi zeMveliso

Uphawu

■ I-bandwidth yerediyo ingafikelela kwi-110 GHz ubuncinci

■ I-voltage ephantsi yesiqingatha-samaza

■ Ukulahleka kokufakwa kuphantsi njenge-5 dB

■ Ubungakanani besixhobo esincinci

I-Rof EOM Intensity Modulator 20G ifilimu encinci ye-lithium niobate modulator TFLN modulator

Ibhendi ye-C yepharamitha

* ngokwezifiso

** Umlinganiselo ophezulu wokuphela (> 25 dB) ungenziwa ngokwezifiso.

Culuhlu

Pi-aramayitha

Isimboli

Iyunithi

Isalathisi

 

Ukusebenza okubonakalayo (@ 25 ° C)

Ubude bexesha obusebenzayo (*) λ nm ~1550
Umlinganiselo wokuphela kokukhanya (@ DC) (**) ER dB ≥ 20
Ukulahleka kokubuya kwe-Optical I-ORL dB ≤ -27
Ukulahleka Kokufakwa Kokukhanya IL dB Ixabiso eliphezulu: 6

Ixabiso eliqhelekileyo: 5

 

 

Ukusebenza kombane (@ 25 ° C)

I-bandwidth ye-electro-optical eyi-3 dB (Ukuqala kwi-2 GHz)  

S21

I-GHz Ixabiso eliphezulu:100

Ixabiso eliqhelekileyo:105

I-voltage yesiqingatha serediyo (half-wave voltage)(@ 50 kHz) Vπ V ≤ 4
Amandla e-half-wave alawulwa bubushushu I-Pπ mW ≤ 50
Ukulahleka kokubuya kwefrikhwensi yerediyo S11 dB ≤ -10
iimeko zokusebenza Ubushushu bokusebenza (* TO °C -20~70

Umngcipheko womonakalo

Ukuba isixhobo sidlula umda womonakalo ophezulu, siya kubangela umonakalo ongenakuguqulwa kwisixhobo, kwaye olu hlobo lomonakalo wesixhobo alugutyungelwa yinkonzo yolondolozo.

Pi-aramayitha

Isimboli

Ubuncinci

Ubuninzi

Iyunithi

Amandla okufaka i-RF Isono - 18 i-dBm
I-RF input swing voltage I-Vpp -2.5 +2.5 V
Ingcambu ephakathi kweVolthi yesikwere yokungenisa iRF IiVrms - 1.78 V
Amandla okufaka okubonakalayo Phina - 20 i-dBm
I-voltage ye-Thermal bias I-Uheater - 4.5 V
Ubungakanani bobushushu obuphezulu Iheater - 50 mA
ubushushu bokugcina TS -40 85
Ukufuma okuthelekisekayo (akukho kufuma) RH 5 90

Ubungakanani bephakheji kunye nenkcazo yephini (iyunithi: mm)

Qaphela: ubungakanani obungaphawulwanga ± 0.15 mm;

Idatha ephawulwe nge-REF. lixabiso lesalathiso kuphela.

N Isimboli

Dinkcazo

1 -

engachazwanga

2 -

engachazwanga

3 I-heater

I-electrode ye-thermostatic bias

4 I-heater

I-electrode ye-thermostatic bias

5 MPD0+

I-anode ye-PD yokujonga ukukhanya kwe-Modulator

6 MPD0-

I-Modulator output light modulator esweni i-PD cathode

RF

Isixhumi seRF

Isixhumi se-1.0 mm K

In

I-fiber optic engenayo

I-FC/APC, i-PMF
Phumile

Ifayibha ye-optical ephumayo

I-FC/APC, i-PMF

* Isixhumi okanye isixhumi se-J esinokwenziwa ngokwezifiso se-1.85mm.


Isampulu yovavanyo lwe-S21

Ukhuseleko lokukhupha i-electrostatic discharge (ESD)

Le mveliso iqulethe i-ESD sensitive component (MPD) kwaye kufuneka isetyenziswe kunye namanyathelo okukhusela e-ESD afunekayo.

Ulwazi lwe-odolo

 

I-P/N: R-TFLN-110G-XX-XX-XX

Inkcazo yeMveliso: I-110 GHz C-band Thin Film Lithium Niobate Intensity Modulator.

 

To purchase this product, inquire about lead times or specific customization options, please contact the Sales Manager or email to: bjrofoc@rof-oc.com

Ngathi

Apha eRofea Optoelectronics, sinikezela ngeendidi ezahlukeneyo zeemveliso ze-electro-optic ukuhlangabezana neemfuno zakho, kuquka ii-modulators zorhwebo, imithombo ye-laser, ii-photodetectors, ii-optical amplifiers, nokunye.
Uluhlu lwethu lwemveliso luphawulwa kukusebenza kwayo okugqwesileyo, ukusebenza kakuhle, kunye nokuguquguquka. Siyazingca ngokubonelela ngeendlela zokwenza ngokwezifiso ukuhlangabezana nezicelo ezizodwa, ukunamathela kwiinkcukacha ezithile, kunye nokubonelela ngenkonzo egqwesileyo kubathengi bethu.
Siyazingca ngokuba siqeshwe njengeshishini lobuchwepheshe obuphezulu eBeijing ngo-2016, kwaye izatifikethi zethu ezininzi zelungelo elilodwa lomenzi zingqina amandla ethu kushishino. Iimveliso zethu zithandwa kakhulu ngaphakathi nangaphandle, kwaye abathengi bancoma umgangatho wazo oqhubekayo nophezulu.
Njengoko sisiya kwikamva elilawulwa yitekhnoloji ye-photoelectric, sizama ukubonelela ngenkonzo engcono kakhulu kwaye senze iimveliso ezintsha ngokubambisana nani. Asinakulinda ukusebenzisana nani!


  • Ngaphambili:
  • Okulandelayo:

  • I-Rofea Optoelectronics inikezela ngoluhlu lwemveliso lwee-electro-optic modulators zorhwebo, ii-Phase modulators, i-Intensity modulator, ii-Photodetectors, imithombo yokukhanya kweLaser, ii-DFB lasers, ii-Optical amplifiers, i-EDFA, i-SLD laser, i-QPSK modulation, i-Pulse laser, i-Light detector, i-Balanced photodetector, i-Laser driver, i-Fiber optic amplifier, i-Optical power meter, i-Broadband laser, i-Tunable laser, i-Optical detector, i-Laser diode driver, i-Fiber amplifier. Sikwabonelela ngee-modulators ezininzi ezithile zokwenza ngokwezifiso, ezinje ngee-1*4 array phase modulators, i-ultra-low Vpi, kunye nee-ultra-high extinction ratio modulators, ezisetyenziswa kakhulu kwiiyunivesithi nakwii-institutions.
    Ndiyathemba ukuba iimveliso zethu ziya kuba luncedo kuwe nakuphando lwakho.

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