Iingenelo kunye nokubaluleka kwe-thin film lithium niobate kwitekhnoloji ye-microwave photon edibeneyo
Itekhnoloji ye-photon ye-microwaveIneengenelo ze-bandwidth enkulu yokusebenza, amandla okusebenza alinganayo kunye nokulahleka okuphantsi kothumelo, okunamandla okuphula imiqobo yobugcisa yenkqubo ye-microwave yendabuko kunye nokuphucula ukusebenza kwezixhobo zolwazi lwe-elektroniki zomkhosi ezifana ne-radar, imfazwe ye-elektroniki, unxibelelwano kunye nokulinganisa kunye nolawulo. Nangona kunjalo, inkqubo ye-microwave photon esekelwe kwizixhobo ezahlukeneyo ineengxaki ezithile ezifana nomthamo omkhulu, ubunzima obunzima kunye nokuzinza okungekho semgangathweni, okuthintela kakhulu ukusetyenziswa kwetekhnoloji ye-microwave photon kumaqonga asesibhakabhakeni nasemoyeni. Ke ngoko, itekhnoloji ye-microwave photon edibeneyo iba yinkxaso ebalulekileyo yokuphelisa ukusetyenziswa kwe-microwave photon kwinkqubo yolwazi lwe-elektroniki yomkhosi kwaye inike ukudlala ngokupheleleyo kwiingenelo zobuchwepheshe be-microwave photon.
Okwangoku, iteknoloji yokudibanisa i-photonic esekelwe kwi-SI kunye neteknoloji yokudibanisa i-photonic esekelwe kwi-INP ziye zakhula ngakumbi emva kweminyaka yophuhliso kwicandelo lonxibelelwano lwe-optical, kwaye iimveliso ezininzi ziye zafakwa kwimarike. Nangona kunjalo, ekusebenziseni i-microwave photon, kukho iingxaki ezithile kwezi ntlobo zimbini zetekhnoloji yokudibanisa i-photon: umzekelo, i-nonlinear electro-optical coefficient ye-Si modulator kunye ne-InP modulator ichasene ne-linearity ephezulu kunye neempawu ezinkulu ezilandelwa yitekhnoloji ye-microwave photon; Umzekelo, iswitshi ye-silicon optical efezekisa i-optical path switching, nokuba isekelwe kwi-thermal-optical effect, i-piezoelectric effect, okanye i-carrier injection dispersion effect, ineengxaki zesantya sokutshintsha kancinci, ukusetyenziswa kwamandla kunye nokusetyenziswa kobushushu, okungenakufikelela kwi-fast beam scanning kunye ne-large array scale microwave photon applications.
I-Lithium niobate ibisoloko ilukhetho lokuqala kwisantya esiphezuluukuguquguquka kwe-electro-opticizixhobo ngenxa yesiphumo sayo esihle kakhulu se-electro-optic esithe tye. Nangona kunjalo, i-lithium yendabuko yi-niobatei-modulator ye-electro-opticalYenziwe ngezinto ezinkulu zekristale ye-lithium niobate, kwaye ubungakanani besixhobo bukhulu kakhulu, obungenakuhlangabezana neemfuno zobuchwepheshe be-microwave photon obudibeneyo. Indlela yokudibanisa izixhobo ze-lithium niobate kunye ne-electro-optical coefficient ehambelanayo kwinkqubo yobuchwepheshe be-microwave photon edibeneyo iye yaba yinjongo yabaphandi abafanelekileyo. Ngo-2018, iqela lophando kwiYunivesithi yaseHarvard e-United States laqala ukubika ubuchwepheshe bokudibanisa i-photonic obusekelwe kwi-thin film lithium niobate kwiNdalo, kuba ubuchwepheshe buneengenelo zokudibanisa okuphezulu, i-bandwidth enkulu ye-electro-optical modulation, kunye nomgca ophezulu we-electro-optical effect, yakuba iqalisiwe, yabangela ngoko nangoko ingqalelo yezemfundo neyemizi-mveliso kwicandelo lokudibanisa i-photonic kunye ne-microwave photonics. Ngokwembono yesicelo se-microwave photon, eli phepha liphonononga impembelelo kunye nokubaluleka kobuchwepheshe bokudibanisa i-photon obusekelwe kwi-thin film lithium niobate kuphuhliso lobuchwepheshe be-microwave photon.
Izinto ze-lithium niobate zefilimu encinci kunye nefilimu encincii-modulator ye-lithium niobate
Kwiminyaka emibini yakutshanje, kuye kwavela uhlobo olutsha lwezinto ze-lithium niobate, oko kukuthi, ifilimu ye-lithium niobate ikhutshiwe kwi-crystal enkulu ye-lithium niobate ngendlela ye-"ion slicing" kwaye ibotshelelwe kwi-Si wafer ngomaleko we-silica buffer ukwenza izinto ze-LNOI (LiNbO3-On-Insulator) [5], ebizwa ngokuba yi-thin film lithium niobate material kweli phepha. Ii-Ridge waveguides ezinobude obungaphezulu kwe-100 nanometers zinokukrolwa kwizinto ze-thin film lithium niobate ngenkqubo eyomileyo yokukrola, kwaye umahluko osebenzayo we-refractive index wee-waveguides ezenziweyo unokufikelela ngaphezulu kwe-0.8 (uphezulu kakhulu kunomahluko we-refractive index wee-lithium niobate waveguides zemveli ze-0.02), njengoko kubonisiwe kuMfanekiso 1. I-waveguide enomda kakhulu yenza kube lula ukufanisa intsimi yokukhanya nentsimi ye-microwave xa uyila i-modulator. Ke ngoko, kuluncedo ukufikelela kwi-voltage ephantsi ye-half-wave kunye ne-bandwidth enkulu yokuguqula ubude obufutshane.
Ukubonakala kwe-low loss lithium niobate submicron waveguide kuyaphula i-bottleneck ye-high driving voltage ye-traditional lithium niobate electro-optic modulator. Isithuba se-electrode sinokuncitshiswa siye kwi-~ 5 μm, kwaye ukudibana phakathi kwentsimi yombane kunye nentsimi ye-optical mode kuyandiswa kakhulu, kwaye i-vπ ·L yehla ukusuka ngaphezulu kwe-20 V·cm ukuya ngaphantsi kwe-2.8 V·cm. Ke ngoko, phantsi kwe-half-wave voltage efanayo, ubude besixhobo bunokuncipha kakhulu xa kuthelekiswa ne-modulator yendabuko. Kwangaxeshanye, emva kokwenza ngcono iiparameter zobubanzi, ubukhulu kunye nexesha le-electrode ye-wave travel, njengoko kubonisiwe kumfanekiso, i-modulator inokuba namandla e-ultra-high modulation bandwidth engaphezulu kwe-100 GHz.
Umfanekiso 1 （a） ubalwa usasazo lwendlela kunye nomfanekiso （b） wecandelo elinqamlezileyo lesikhokelo se-LN waveguide
Umfanekiso 2 （a） Isikhokelo samaza kunye nesakhiwo se-electrode kunye ne-（b） ipleyiti ephambili ye-LN modulator
Ukuthelekiswa kwee-modulators ze-lithium niobate zefilimu encinci kunye nee-modulators zezorhwebo ze-lithium niobate zendabuko, ii-modulators ezisekwe kwi-silicon kunye nee-indium phosphide (InP) modulators kunye nezinye ii-modulators ze-electro-optical ezikhoyo ezinesantya esiphezulu, iiparameter eziphambili zothelekiso ziquka:
(1) Imveliso yobude be-volt yesiqingatha-wave (vπ ·L, V·cm), ilinganisa ukusebenza kakuhle kwe-modulation ye-modulator, ixabiso lincinci, kokukhona ukusebenza kakuhle kwe-modulation kuphezulu;
(2) i-bandwidth ye-modulation ye-3 dB (GHz), elinganisa impendulo ye-modulator kwi-modulation ye-frequency ephezulu;
(3) Ukulahleka kokufakwa kwe-Optical (dB) kummandla we-modulation. Kuyabonakala kwitheyibhile ukuba i-thin film lithium niobate modulator ineenzuzo ezicacileyo kwi-modulation bandwidth, i-half-wave voltage, i-optical interpolation loss njalo njalo.
I-Silicon, njengesiseko se-optoelectronics edibeneyo, sele iphuhlisiwe ukuza kuthi ga ngoku, le nkqubo sele ivuthiwe, i-miniaturization yayo inceda ekuhlanganisweni okukhulu kwezixhobo ezisebenzayo/ezingasebenziyo, kwaye i-modulator yayo ifundwe ngokubanzi nangokunzulu kwicandelo lonxibelelwano lwe-optical. Indlela yokuguqula i-electro-optical ye-silicon ikakhulu yi-carrier depling-tion, i-carrier injection kunye ne-carrier accumulation. Phakathi kwazo, i-bandwidth ye-modulator ifanelekile kunye ne-linear degree carrier depletion mechanism, kodwa ngenxa yokuba ukusasazwa kwe-optical field kuhambelana nokungahambelani kwendawo yokunciphisa, esi siphumo siya kwazisa i-nonlinear second-order distortion kunye ne-third-order intermodulation terms, kunye ne-absorption effect ye-carrier ekukhanyeni, eya kukhokelela ekunciphiseni i-optical modulation amplitude kunye ne-signal distortion.
I-InP modulator ineziphumo ezibalaseleyo ze-electro-optical, kwaye isakhiwo se-quantum well esine-layer ezininzi sinokufezekisa ii-modulators ze-ultra-high kunye ne-low driving voltage modulators ezine-Vπ·L ukuya kuthi ga kwi-0.156V · mm. Nangona kunjalo, umahluko we-refractive index ene-electric field ubandakanya amagama angqalileyo nangenamgca, kwaye ukwanda kokuqina kwe-electric field kuya kwenza isiphumo sesibini sibonakale. Ke ngoko, ii-modulators ze-silicon kunye ne-InP electro-optic kufuneka zisebenzise i-bias ukwenza i-pn junction xa zisebenza, kwaye i-pn junction iya kuzisa ilahleko yokufunxa ekukhanyeni. Nangona kunjalo, ubungakanani be-modulator yezi zimbini buncinci, ubungakanani be-modulator ye-InP yorhwebo yi-1/4 ye-LN modulator. Ukusebenza kakuhle kwe-modulation, efanelekileyo kwiinethiwekhi zokudlulisa i-digital optical ezinoxinano oluphezulu kunye nomgama omfutshane njengeendawo zedatha. Isiphumo se-electro-optical se-lithium niobate asinayo indlela yokufunxa ukukhanya kunye nelahleko ephantsi, efanelekileyo kwi-long distance coherent.unxibelelwano lwe-opticalenomthamo omkhulu kunye nesantya esiphezulu. Kwisicelo se-microwave photon, ii-electro-optical coefficients ze-Si kunye ne-InP azikho ngqo, nto leyo engafanelekanga kwinkqubo ye-microwave photon elandela umgca ophezulu kunye ne-large dynamics. Izinto ze-lithium niobate zifanelekile kakhulu kwisicelo se-microwave photon ngenxa ye-electro-optic modulation coefficient yazo epheleleyo.
Ixesha lokuthumela: Epreli-22-2024