Izinto ekufuneka ziqwalaselwe kuyiloi-laser ye-semiconductor enamandla aphezulu
Eli nqaku liza kuchaza ngokucwangcisiweyo izinto eziphambili eziqwalaselweyo kuyilo kunye neendlela zokusetyenziswa kwe-high-power semiconductorilezaNgokusekelwe kwingcamango eqhelekileyo "yokwandisa umda ophezulu wamandla ngokwandisa umthamo wokukhanya, ukuphucula ukuguqulwa kwamandla kunye neendlela zokusasaza ngelixa kuthintelwa umonakalo omkhulu we-optical (COD)", uhlalutyo olunzulu lwenziwe kwiinkalo ezi-9 eziphambili:
1. Indawo ekhupha umbane obanzi: Ngokwamkela isakhiwo sendawo ebanzi (njengokwandisa ububanzi bendawo ekhupha umbane i-W ukusuka kwi-micrometer ezimbalwa ukuya kwi-50-200 micrometers), amandla aphezulu okukhupha umbane anokonyuswa ngokuthe ngqo, okuyindlela esisiseko yokufumana imveliso yetyhubhu enye kwinqanaba le-watt okanye amashumi ee-watts, kodwa incama umgangatho we-beam.
2. Umgodi omde: Ukwandisa ubude bomgodi ngundoqo wokuphucula ukusebenza kokufudumeza kombane kunye nokusebenza kakuhle nangokunamandla aphezulu. Ingundoqo yayo ikwindlela ephumelelayo yokunciphisa ukumelana nobushushu kunye nokuxhathisa kwesixhobo, ngaloo ndlela icinezela ukunyuka kobushushu bomngxuma osebenzayo wengingqi, inciphise iziphumo zokugcwala kwamandla, kwaye iphucule amandla okukhupha kunye nokusebenza kakuhle.
3. Ukwandisa amaza kunye nemingxunya ye-optical engalinganiyo: Ngokwandisa usasazo lwentsimi ye-optical (njengokusebenzisa izakhiwo ze-optical cavity ezingalinganiyo), ukudibana phakathi kwentsimi ye-optical kunye neendawo zokulahleka kokufunxwa okuphezulu kunokuncipha, kunciphisa kakhulu ilahleko zangaphakathi, kuphuculwe ukusebenza kakuhle kwe-quantum, kwaye kuncitshiswe ukuveliswa kobushushu. Kwangaxeshanye, umgangatho we-beam kwicala elithe nkqo nawo unokuphuculwa.
4. I-Fill Factor: Kwizixhobo zebha, i-fill factor (umlinganiselo wobubanzi beyunithi ekhupha ukukhanya kububanzi bebha) yeyona parameter iphambili yokulinganisela uxinano lwamandla okukhupha kunye nobunzima bolawulo lobushushu. I-fill factor ephezulu izisa uxinano lwamandla aphezulu kodwa ifuna ukusasazwa kobushushu okuphezulu kakhulu, ngelixa i-fill factor ephantsi inceda ngakumbi kulawulo lobushushu kwaye iphucula ukuthembeka.
6. Iteknoloji yokukhusela ubuso: Ukuphucula umda womonakalo wesipili obonakalayo (COMD) obangela umonakalo omkhulu ebusweni bobuso yisitshixo sokugqobhoza i-power bottleneck. Eli nqaku lichaza ngakumbi ngeteknoloji ezintathu eziphambili:
6.1 Ukufakwa kwe-passivation kunye nokufakwa kwe-cavity surface: Ngokubeka iileya ze-passivation kunye neefilimu ze-reflectivity ephezulu/ezichasene nokubonakaliswa, iziphene zomphezulu we-cavity ziyasuswa, i-non-radiative recombination iyancitshiswa, kwaye umda we-COMD uphuculwa kakhulu.
6.2 Iteknoloji yefestile engafunxiyo: Ukusebenzisa i-quantum well hybridization kunye nezinye iindlela zokwenza ummandla wefestile ocacileyo kwicala lokugqibela ukunciphisa ukufunxwa kokukhanya nokuthintela i-COMD.
6.3 Itekhnoloji yendawo engajoviyo kumphezulu womngxuma: Yazisa indawo yangoku engajoviyo kufutshane nomphezulu womngxuma ukuze kuncitshiswe uxinano lomthwali kunye nokuphinda kuhlangane okungajoviyo kumphezulu womngxuma.
7. Uyilo lokukhanya okuphezulu: Iindlela ezimbini zokufumana ukukhanya okuphezulu ziqalisiwe ukujongana nengxaki yomgangatho ophantsi wemitha kwi-laser yendawo ebanzi:
7.1. Ulwakhiwo lwekhowuni: Xa zidityaniswe "indawo yembewu" yesikhokelo samaza esincinci kwicala elingaphambili kunye "nendawo yokukhulisa ikhowuni" kwicala elingasemva, umgangatho womqadi okufutshane nomda wokukhupha uyagcinwa ngelixa kwandiswa amandla.
7.2 Ulawulo lweMode: Ukwazisa izakhiwo ezincinci ngaphakathi koluhlu olubanzi ukuze kunyuswe ngokukhethekileyo ukulahleka kweendlela ezinqamlezileyo eziphezulu, ngaloo ndlela kuphuculwe umgangatho wemitha.
8. Uxinzelelo lwe-quantum well kunye noxinzelelo lwe-strain: Ukungenisa uxinzelelo kwindawo esebenzayo ye-quantum well kunokuphucula ulwakhiwo lwebhendi, kuphucule i-differential gain, ngaloo ndlela kuncitshiswe i-threshold current, kuphuculwe ukusebenza kakuhle, kwaye kuphuculwe iimpawu zobushushu obuphezulu. Itekhnoloji yoxinzelelo lwe-strain ithintela ukuqokelelwa koxinzelelo kunye neziphene ngokukhulisa iileya zomqobo ezinoxinzelelo oluchaseneyo, ukuqinisekisa umgangatho wezinto.
9. Ulawulo oluphezulu lobushushu kunye nokupakishwa okuphantsi koxinzelelo: Ukuphendula kwimingeni yokusasazwa kobushushu ebangelwa kukuxinana kwamandla aphezulu, eli nqaku lizisa izixhobo ezintsha zokusasazwa kobushushu (ezifana nezixhobo zedayimani ezidityanisiweyo), ii-microchannel coolers, kunye neetekhnoloji zokupakisha ezisebenzisa izixhobo zojongano oluphantsi koxinzelelo ukufikelela kumthamo wokusasazwa kobushushu ophezulu kakhulu kunye nokuphucula ukuthembeka.
10. I-Distributed waveguide: Njengesicwangciso solawulo lobushushu olungaphakathi lwe-chip level, esi sakhiwo sahlula i-ridge waveguide ibe yindawo yokukhupha umoya kunye nendawo yokusasaza ubushushu engashukumiyo kubude bomngxuma, kwaye sakha umjelo wobushushu onqamlezileyo ngaphakathi kwe-chip ukuze sisasaze ubushushu ngokufanelekileyo, siphula imida yeendlela zemveli zokusasaza ubushushu.
Isishwankathelo kunye nombono zibonisa ukuba uyilo lwamandla aphezului-laser ye-semiconductoryingxaki yokwenza ngcono izinto ezininzi ebandakanya umbane, i-optics, i-thermodynamics, kunye nokuthembeka. Kubalulekile ukufikelela kwibhalansi engcono phakathi koyilo oluphambili oluthathu lwendawo ebanzi yokukhupha umbane, umngxuma omde, kunye ne-waveguide ebanzi, kunye nobuchwepheshe obujongene nemingeni emithathu ephambili yolawulo lobushushu, umonakalo wobuso bokugqibela, kunye nomgangatho wemitha. Ukuphuculwa ngakumbi kokusebenza kwexesha elizayo kuya kuxhomekeka kuphuhliso lwezinto ezintsha, iindlela ezintsha zomzimba, kunye neenkqubo ezintsha zokuvelisa.
Ixesha leposi: Meyi-21-2026