Ulwakhiwo lwe-InGaAs Photodetector

Ulwakhiwo lweIsixhobo sokubona iifoto se-InGaAs
Ukususela ngeminyaka yoo-1980, abaphandi bebefunda ulwakhiwo lwee-photodetectors ze-InGaAs, ezinokushwankathelwa kwiindidi ezintathu eziphambili: i-InGaAs metal semiconductor metalii-photodetectors(MSM-PD), i-InGaAsIzixhobo zokufumana iifoto zePIN(PIN-PD), kunye nee-InGaAsizixhobo zokubona iifoto ze-avalanche(APD-PD). Kukho umahluko omkhulu kwinkqubo yokuvelisa kunye neendleko zee-InGaAs photodetectors ezinezakhiwo ezahlukeneyo, kwaye kukwakho umahluko omkhulu ekusebenzeni kwesixhobo.
Umzobo wesakhiwo se-InGaAs metal semiconductor metal photodetector uboniswe kumfanekiso, osisakhiwo esikhethekileyo esisekelwe kwi-Schottky junction. Ngo-1992, uShi nabanye basebenzise iteknoloji ye-low-pressure metal organic vapor phase epitaxy (LP-MOVPE) ukukhulisa iileya ze-epitaxial nokulungiselela ii-InGaAs MSM photodetectors. Esi sixhobo sinokuphendula okuphezulu kwe-0.42 A/W kubude be-1.3 μ m kunye nomsinga omnyama ongaphantsi kwe-5.6 pA/μ m² kwi-1.5 V. Ngo-1996, abaphandi basebenzise i-gas-phase molecular beam epitaxy (GSMBE) ukukhulisa iileya ze-InAlAs InGaAs InP epitaxial, ezibonakalise iimpawu eziphezulu zokumelana. Iimeko zokukhula zalungiswa ngokulinganisa i-X-ray diffraction, okubangele ukungafani kwe-lattice phakathi kweeleya ze-InGaAs kunye ne-InAlAs ngaphakathi koluhlu lwe-1 × 10 ⁻ ³. Ngenxa yoko, ukusebenza kwesixhobo kwenziwe ngcono, ngombane omnyama ongaphantsi kwe-0.75 pA/μ m² kwi-10 V kunye nempendulo ekhawulezayo ye-16 ps kwi-5 V. Ngokubanzi, i-photodetector yesakhiwo se-MSM inesakhiwo esilula nesilula ukusidibanisa, esibonisa umbane omnyama ophantsi (inqanaba le-pA), kodwa i-electrode yesinyithi inciphisa indawo yokufunxa ukukhanya kwesixhobo, nto leyo ebangela ukuba siphendule kancinci xa kuthelekiswa nezinye izakhiwo.

I-InGaAs PIN photodetector inomaleko wangaphakathi ofakwe phakathi komaleko woqhagamshelwano wohlobo lwe-P kunye nomaleko woqhagamshelwano wohlobo lwe-N, njengoko kubonisiwe kumfanekiso, okwandisa ububanzi bendawo yokuncitshiswa, ngaloo ndlela kukhanye iipayina ezininzi ze-electron hole kwaye kwenze i-photocurrent enkulu, ngaloo ndlela kubonakalisa ukuhanjiswa kwe-elektroniki okugqwesileyo. Ngo-2007, abaphandi basebenzise i-MBE ukukhulisa amaleko e-buffer anobushushu obuphantsi, bephucula uburhabaxa bomphezulu kwaye boyise ukungalingani kwe-lattice phakathi kwe-Si kunye ne-InP. Badibanise izakhiwo ze-InGaAs PIN kwi-substrates ze-InP besebenzisa i-MOCVD, kwaye ukusabela kwesixhobo kwakumalunga ne-0.57 A/W. Ngo-2011, abaphandi basebenzise ii-PIN photodetectors ukuphuhlisa isixhobo somfanekiso se-LiDAR esifutshane sokuhamba, ukuphepha imiqobo/ukungqubana, kunye nokufumanisa/ukuqaphela izithuthi ezincinci zomhlaba ezingenabantu. Esi sixhobo sadibaniswa ne-chip ye-microwave amplifier ebiza kancinci, nto leyo ephucula kakhulu umlinganiselo wesignali-kwingxolo wee-InGaAs PIN photodetectors. Ngenxa yesi sizathu, ngo-2012, abaphandi basebenzise esi sixhobo somfanekiso seLiDAR kwiirobhothi, ezinoluhlu lokufumanisa olungaphezulu kweemitha ezingama-50 kwaye isisombululo sanda saya kwi-256 × 128.
I-InGaAs avalanche photodetector luhlobo lwe-photodetector ene-gain, njengoko kubonisiwe kumzobo wesakhiwo. Ii-electron hole pairs zifumana amandla aneleyo phantsi kwesenzo sentsimi yombane ngaphakathi kwendawo ephindaphindayo, kwaye zingqubana neeathom ukuze zenze ii-electron hole pairs ezintsha, zenze i-avalanche effect kwaye ziphinde kabini ii-non-equilibrium charge carriers kwizinto. Ngo-2013, abaphandi basebenzise i-MBE ukukhulisa ii-InGaAs kunye nee-InAlAs alloys ezihambelana ne-lattice kwi-InP substrates, ziguqula amandla e-carrier ngokutshintsha kwi-alloy composition, ubukhulu be-epitaxial layer, kunye ne-doping, zikhulisa i-electroshock ionization ngelixa zinciphisa i-hole ionization. Phantsi kwe-equivalent output signal gain, i-APD ibonisa ingxolo ephantsi kunye nomsinga omnyama ophantsi. Ngo-2016, abaphandi bakha iqonga lovavanyo lwe-1570 nm laser active imaging platform esekelwe kwi-InGaAs avalanche photodetectors. I-internal circuit yeIsixhobo sokubona ifoto se-APDIi-echoes ezifunyenweyo kunye nokukhupha ngokuthe ngqo imiqondiso yedijithali, okwenza isixhobo sonke sibe ncinci. Iziphumo zovavanyo ziboniswe kwiMifanekiso (d) kunye no-(e). Umfanekiso (d) yifoto ebonakalayo yethagethi yomfanekiso, kwaye uMfanekiso (e) ngumfanekiso womgama onemilinganiselo emithathu. Kuyabonakala ngokucacileyo ukuba indawo yefestile kwiZone C inomgama othile wobunzulu ukusuka kwiZones A kunye no-B. Eli qonga lifikelela kububanzi be-pulse obungaphantsi kwe-10 ns, amandla e-pulse enye ahlengahlengiswayo (1-3) mJ, i-angle yombono ye-2 ° yeelensi zokudlulisa kunye nokwamkela, izinga lokuphindaphinda le-1 kHz, kunye nomjikelo womsebenzi we-detector omalunga ne-60%. Ngenxa yokufumana i-photocurrent yangaphakathi, impendulo ekhawulezayo, ubungakanani obuncinci, ukuqina, kunye nexabiso eliphantsi le-APD, ii-photodetector ze-APD zinokufikelela kwinqanaba lokufumanisa elingaphezulu komyalelo omnye kunee-PIN photodetectors. Ke ngoko, okwangoku i-radar yelaser ephambili isebenzisa ikakhulu ii-avalanche photodetectors.