Inkqubo yezinto zesekethe edibeneyo yePhotonic (PIC)

Inkqubo yezinto zesekethe edibeneyo yePhotonic (PIC)

I-silicon photonics liqela elisebenzisa izakhiwo ezicwangcisiweyo ezisekelwe kwizixhobo ze-silicon ukuze ziqondise ukukhanya ukuze kufezekiswe imisebenzi eyahlukeneyo. Apha sigxila ekusebenziseni i-silicon photonics ekudaleni ii-transmitters kunye nee-receivers zonxibelelwano lwe-fiber optic. Njengoko isidingo sokongeza uthumelo olungaphezulu kwi-bandwidth ethile, indawo ethile, kunye neendleko ezithile zisanda, i-silicon photonics iba ngcono ngokwezoqoqosho. Kwicandelo le-optical,itekhnoloji yokudibanisa i-photonickufuneka zisetyenziswe, kwaye uninzi lwee-transceivers ezihambelanayo namhlanje zakhiwe kusetyenziswa ii-modulators ze-LiNbO3/planar light-wave circuit (PLC) ezahlukeneyo kunye nee-InP/PLC receivers.

Umfanekiso 1: Ubonisa iinkqubo zezinto ezisetyenziswa rhoqo zesekethe edibeneyo ye-photonic (PIC).

Umfanekiso 1 ubonisa iinkqubo zezinto zePIC ezidumileyo. Ukusuka ekhohlo ukuya ekunene kukho i-silicon-based silica PIC (ekwaziwa ngokuba yi-PLC), i-silicon-based insulator PIC (i-silicon photonics), i-lithium niobate (LiNbO3), kunye ne-III-V group PIC, ezifana ne-InP kunye ne-GaAs. Eli phepha ligxile kwi-silicon-based photonics. Kwiii-photonics ze-silicon, isignali yokukhanya ihamba ikakhulu kwi-silicon, ene-band gap engangqalanga ye-1.12 electron volts (enobude obuyi-1.1 microns). I-Silicon ikhuliswa ngendlela yeekristale ezicocekileyo kwii-oven ize inqunyulwe ibe zii-wafers, namhlanje eziqhele ukuba yi-300 mm ububanzi. Umphezulu we-wafer uyaxiliswa ukuze wenze umaleko we-silica. Enye yee-wafers igqunywe ngee-athomu ze-hydrogen ukuya kubunzulu obuthile. Ezi wafers zimbini emva koko zidityaniswe kwi-vacuum kwaye iileya zazo ze-oxide zidibana. Indibano iyaqhekeka kumgca wokufakelwa kwe-hydrogen ion. Umaleko we-silicon kwindawo eqhekekileyo uyapholishwa, ekugqibeleni ushiya umaleko omncinci we-crystalline Si phezu kwe-wafer "yokuphatha" ye-silicon engaphelelanga phezu komaleko we-silica. Ii-waveguides zenziwe kolu maleko mncinci we-crystalline. Ngelixa ezi wafers ezisekelwe kwi-silicon-based insulator (SOI) zenza ukuba ii-waveguides ze-silicon photonics eziphantsi zibe nokwenzeka, eneneni zisetyenziswa kakhulu kwiisekethe ze-CMOS ezinamandla aphantsi ngenxa yombane ophantsi owubonelelayo.

Kukho iintlobo ezininzi ezinokwenzeka ze-silicon-based optical waveguides, njengoko kubonisiwe kuMfanekiso 2. Ziqala kwi-microscale germanium-doped silica waveguides ukuya kwi-nanoscale Silicon Wire waveguides. Ngokudibanisa i-germanium, kunokwenzeka ukwenzaii-photodetectorskunye nokufunxwa kombaneiimodulators, kwaye mhlawumbi kwanee-amplifiers ze-optical. Ngokusebenzisa i-doping silicon, i-i-modulator yokukhanyaingenziwa. Ezantsi ukusuka ekhohlo ukuya ekunene zezi: i-silicon wire waveguide, i-silicon nitride waveguide, i-silicon oxynitride waveguide, i-thick silicon ridge waveguide, i-thin silicon nitride waveguide kunye ne-doped silicon waveguide. Phezulu, ukusuka ekhohlo ukuya ekunene, kukho ii-depletion modulators, ii-germanium photodetectors, kunye ne-germaniumizixhobo zokukhulisa ukukhanya.


Umfanekiso 2: Icandelo elinqamlezileyo lothotho lwe-silicon-based optical waveguide series, olubonisa ukulahleka okuqhelekileyo kokusasazeka kunye ne-refractive indices.


Ixesha leposi: Julayi-15-2024