Iifotodetectors kunye namaza okukhanya anqamlezileyo

Izixhobo zokufotakunye namaza okujikeleza anqamlezileyo

Eli nqaku ligxile kwizixhobo kunye nemigaqo yokusebenza yee-photodetectors (ingakumbi indlela yokuphendula esekelwe kwithiyori yebhendi), kunye neeparameter eziphambili kunye neemeko zokusetyenziswa kwezixhobo ezahlukeneyo ze-semiconductor.
1. Umgaqo oyintloko: I-photodetector isebenza ngokusekelwe kwisiphumo se-photoelectric. Ii-photon zesiganeko kufuneka zithwale amandla aneleyo (angaphezulu kunobubanzi be-bandgap Eg yezinto) ukuze zivuse ii-electron ukusuka kwi-valence band ukuya kwi-conduction band, zenze isignali yombane enokubonwa. Amandla e-photon ahambelana ngokuphambeneyo ne-wavelength, ngoko ke i-detector ine-"cut-off wavelength" (λ c) - ubude be-wavelength obuphezulu obunokuphendula, ngaphaya koko bungenakukwazi ukuphendula ngokufanelekileyo. Ububanzi be-wavelength obunqunyiweyo bunokuqikelelwa kusetyenziswa ifomyula λ c ≈ 1240/Eg (nm), apho i-Eg ilinganiswa kwi-eV.
2. Izixhobo eziphambili ze-semiconductor kunye neempawu zazo:
I-Silicon (Si): ububanzi be-bandgap obumalunga ne-1.12 eV, ubude be-cutoff obumalunga ne-1107 nm. Ifanelekile ukufunyanwa kobude be-wavelength obufutshane obufana ne-850 nm, obusetyenziswa rhoqo kwi-short-range multimode fiber optic interconnection (ezifana namaziko edatha).
I-Gallium arsenide (GaAs): ububanzi be-bandgap obuyi-1.42 eV, ubude be-cutoff obumalunga ne-873 nm. Ifanelekile kwi-850 nm wavelength band, inokudityaniswa nemithombo yokukhanya ye-VCSEL yento efanayo kwi-chip enye.
I-Indium gallium arsenide (InGaAs): Ububanzi be-bandgap bungalungiswa phakathi kwe-0.36 ~ 1.42 eV, kwaye ubude be-cutoff wavelength bugubungela i-873 ~ 3542 nm. Yinto ephambili yokubona iifestile zonxibelelwano lwefayibha ze-1310 nm kunye ne-1550 nm, kodwa ifuna i-substrate ye-InP kwaye iyinkimbinkimbi ukuyidibanisa neesekethe ezisekelwe kwi-silicon.
I-Germanium (Ge): inobubanzi be-bandgap obumalunga ne-0.66 eV kunye nobude be-cutoff obumalunga ne-1879 nm. Ingagubungela i-1550 nm ukuya kwi-1625 nm (i-L-band) kwaye iyahambelana ne-silicon substrates, nto leyo eyenza ukuba ibe sisisombululo esinokwenzeka sokwandisa impendulo kwiibhendi ezinde.
I-silicon germanium alloy (efana ne-Si0.5Ge0.5): ububanzi be-bandgap obumalunga ne-0.96 eV, ubude be-cutoff obumalunga ne-1292 nm. Ngokusebenzisa i-germanium kwi-silicon, ubude be-response bunokwandiswa ukuya kwiibhendi ezinde kwi-silicon substrate.
3. Unxulumano lwemeko yesicelo:
Ibhendi ye-850 nm:Izixhobo zokubona iifoto zeSiliconokanye ii-GaAs photodetectors zingasetyenziswa.
Ibhendi ye-1310/1550 nm:Izixhobo zokubona iifoto ze-InGaAszisetyenziswa kakhulu. Iifotodetectors ze-germanium ezicocekileyo okanye i-silicon germanium alloy nazo zinokugubungela olu luhlu kwaye zibe neengenelo ezinokubakho ekuhlanganisweni okusekelwe kwi-silicon.

Lilonke, ngokusebenzisa iingcamango eziphambili zethiyori yebhendi kunye nobude be-cutoff, iimpawu zokusetyenziswa kunye noluhlu lwe-wavelength olugubungela ubude bezinto ezahlukeneyo ze-semiconductor kwi-photodetectors zihlolwe ngokucwangcisiweyo, kwaye ubudlelwane obusondeleyo phakathi kokukhethwa kwezinto, i-fiber optic communication wavelength window, kunye neendleko zenkqubo yokudibanisa zichaziwe.