Namhlanje makhe sijonge i-OFC2024ii-photodetectors, eziquka ikakhulu iGeSi PD/APD, i-InP SOA-PD, kunye ne-UTC-PD.
1. I-UCDAVIS ifumana i-resonant ebuthathaka eyi-1315.5nm engalinganiyo i-Fabry-Perotisixhobo sokubona iifotonge-capacitance encinci kakhulu, eqikelelwa ukuba yi-0.08fF. Xa i-bias i--1V (-2V), umsinga omnyama yi-0.72 nA (3.40 nA), kwaye izinga lokuphendula yi-0.93a /W (0.96a /W). Amandla e-optical agcweleyo yi-2 mW (3 mW). Ingaxhasa uvavanyo lwedatha olukhawulezayo lwe-38 GHz.
Lo mzobo ulandelayo ubonisa ulwakhiwo lwe-AFP PD, equlathe i-waveguide edibeneyo yeGe-on-Isixhobo sokubona ifotonge-waveguide yangaphambili ye-SOI-Ge efikelela kwi-> 90% yokudibanisa imo kunye nokukhanya okungaphezulu kwe-10%. Umva yi-distributed Bragg reflector (DBR) ene-reflectivity engaphezulu kwe->95%. Ngokusebenzisa uyilo lwe-cavity olulungiselelweyo (imeko yokufanisa isigaba sokujika), ukukhanya kunye nokudluliselwa kwe-resonator ye-AFP kunokususwa, okubangela ukuba i-Ge detector ifunxwe phantse kwi-100%. Kuyo yonke i-20nm bandwidth ye-central wavelength, i-R+T <2% (-17 dB). Ububanzi be-Ge yi-0.6µm kwaye i-capacitance iqikelelwa ukuba yi-0.08fF.
2, iYunivesithi yeSayensi neTekhnoloji yaseHuazhong ivelise i-silicon germaniumi-photodiode ye-avalanche, i-bandwidth >67 GHz, inzuzo >6.6. I-SACMIsixhobo sokubona ifoto se-APDUlwakhiwo lwe-transverse pipin junction lwenziwe kwiqonga le-silicon optical. I-Intrinsic germanium (i-Ge) kunye ne-intrinsic silicon (i-Si) zisebenza njengomaleko ofunxa ukukhanya kunye nomaleko ophindwe kabini we-electron, ngokwahlukeneyo. Ummandla we-i-Ge onobude be-14µm uqinisekisa ukufunxa ukukhanya okwaneleyo kwi-1550nm. Iindawo ezincinci ze-i-Ge kunye ne-i-Si zilungele ukwandisa uxinano lwe-photocurrent kunye nokwandisa i-bandwidth phantsi kwe-high bias voltage. Imephu yeliso ye-APD ilinganiswe kwi--10.6 V. Ngamandla okukhanya okufakwayo we--14 dBm, imephu yeliso ye-50 Gb/s kunye ne-64 Gb/s OOK signals iboniswe ngezantsi, kwaye i-SNR elinganisiweyo yi-17.8 kunye ne-13.2 dB, ngokwahlukeneyo.
3. Izixhobo zomgca wovavanyo lwe-IHP 8-intshi ze-BiCMOS zibonisa i-germaniumIsixhobo sokubona ifoto sePDngobubanzi be-fin obumalunga ne-100 nm, obunokuvelisa intsimi yombane ephezulu kunye nexesha elifutshane kakhulu lokuhamba kwe-photocarrier. I-Ge PD ine-bandwidth ye-OE ye-265 GHz@2V@ 1.0mA DC photocurrent. Ukuhamba kwenkqubo kuboniswe ngezantsi. Uphawu olukhulu kukuba ukufakelwa kwe-ion exutyiweyo ye-SI yendabuko kuyashiywa, kwaye iskimu sokusika ukukhula siyasetyenziswa ukuze kuthintelwe impembelelo yokufakelwa kwe-ion kwi-germanium. Umbane omnyama yi-100nA,R = 0.45A /W.
4, i-HHI ibonisa i-InP SOA-PD, equka i-SSC, i-MQW-SOA kunye ne-photodetector yesantya esiphezulu. Kwi-O-band. I-PD inokuphendula kwe-0.57 A/W engaphantsi kwe-1 dB PDL, ngelixa i-SOA-PD inokuphendula kwe-24 A/W engaphantsi kwe-1 dB PDL. I-bandwidth yezi zimbini yi ~60GHz, kwaye umahluko we-1 GHz unokubangelwa yi-resonance frequency ye-SOA. Akukho siphumo sepateni esibonwe kumfanekiso wamehlo wokwenyani. I-SOA-PD inciphisa amandla okukhanya afunekayo malunga ne-13 dB kwi-56 GBaud.
5. I-ETH isebenzisa i-Type II GaInAsSb/InP UTC-PD ephuculweyo, ene-bandwidth ye-60GHz @ zero bias kunye namandla aphezulu okukhupha i--11 DBM kwi-100GHz. Ukuqhubeka kweziphumo zangaphambili, kusetyenziswa amandla okuhambisa ii-electron aphuculweyo e-GaInAsSb. Kweli phepha, iileya zokufunxa ezilungiselelweyo ziquka i-GaInAsSb ene-doped eninzi ye-100 nm kunye ne-GaInAsSb engafakwanga ye-20 nm. Ileya ye-NID inceda ukuphucula ukusabela ngokubanzi kwaye ikwanceda ekunciphiseni amandla esixhobo kunye nokuphucula i-bandwidth. I-64µm2 UTC-PD ine-bandwidth ye-zero-bias ye-60 GHz, amandla okukhupha ayi--11 dBm kwi-100 GHz, kunye nomsinga wokugcwala we-5.5 mA. Kwi-reverse bias ye-3 V, i-bandwidth iyanda iye kwi-110 GHz.
6. I-Innolight yaseka imodeli yempendulo yefrikhwensi ye-germanium silicon photodetector ngokusekelwe ekuqwalaseleni ngokupheleleyo ukusetyenziswa kwezixhobo, ukusasazwa kwentsimi yombane kunye nexesha lokudluliselwa kwenkampani eveliswa yifoto. Ngenxa yesidingo samandla amakhulu okufaka kunye ne-bandwidth ephezulu kwizicelo ezininzi, ukufakwa kwamandla amakhulu okukhanya kuya kubangela ukwehla kwe-bandwidth, eyona ndlela ilungileyo kukunciphisa uxinzelelo lwenkampani ethwala kwi-germanium ngoyilo lwesakhiwo.
7, IYunivesithi yaseTsinghua iyile iintlobo ezintathu ze-UTC-PD, (1) isakhiwo se-bandwidth double drift layer (DDL) se-100GHz esinamandla okugcwala aphezulu i-UTC-PD, (2) isakhiwo se-bandwidth double drift layer (DCL) se-100GHz esinokuphendula okuphezulu i-UTC-PD, (3) i-230 GHZ bandwidth MUTC-PD enamandla okugcwala aphezulu, Kwiimeko ezahlukeneyo zesicelo, amandla okugcwala aphezulu, i-bandwidth ephezulu kunye nokuphendula okuphezulu kunokuba luncedo kwixesha elizayo xa ungena kwixesha le-200G.
Ixesha lokuthumela: Agasti-19-2024