Umgca ophezului-electro-optic modulatorkunye nokusetyenziswa kwe-photon ye-microwave
Ngenxa yokwanda kweemfuno zeenkqubo zonxibelelwano, ukuze kuphuculwe ngakumbi ukusebenza kakuhle kokudluliselwa kwemiqondiso, abantu baya kudibanisa ii-photon kunye nee-elektroni ukuze bafumane iingenelo ezihambelanayo, kwaye kuya kuzalwa ii-microwave photonics. I-electro-optical modulator iyadingeka ukuze kuguqulwe umbane ube kukukhanya ngaphakathi.iinkqubo ze-photonic ze-microwave, kwaye eli nyathelo libalulekileyo lidla ngokumisela ukusebenza kwenkqubo yonke. Ekubeni ukuguqulwa kwesignali yerediyo kwi-optical domain yinkqubo yesignali ye-analog, kwaye eqhelekileyoiimodulators ze-electro-opticalUkuba azinalo ulungelelwano oluqhelekileyo, kukho ukuphazamiseka okukhulu kwesignali kwinkqubo yokuguqula. Ukuze kufezekiswe uhlengahlengiso oluchanekileyo, indawo yokusebenza ye-modulator idla ngokumiselwa kwindawo ye-orthogonal bias, kodwa ayinakuhlangabezana neemfuno ze-microwave photon link yolungelelwano oluphezulu lwe-modulator. Ii-electro-optic modulators ezine-linearity ephezulu zifuneka ngokukhawuleza.
Ukuguqulwa kwe-high-speed refractive index yezinto ze-silicon kudla ngokufezekiswa yi-free carrier plasma dispersion (FCD). Zombini i-FCD effect kunye ne-PN junction modulation azikho linear, nto leyo eyenza i-silicon modulator ingabi linear kune-lithium niobate modulator. Izinto ze-lithium niobate zibalasele kakhulu.ukuguquguquka kwe-electro-opticaliipropati ngenxa yesiphumo sazo sePucker. Kwangaxeshanye, izinto ze-lithium niobate zinezibonelelo ze-bandwidth enkulu, iimpawu ezilungileyo ze-modulation, ilahleko ephantsi, ukuhlanganiswa okulula kunye nokuhambelana nenkqubo ye-semiconductor, ukusetyenziswa kwe-thin film lithium niobate ukwenza i-electro-optical modulator esebenza kakuhle, xa kuthelekiswa ne-silicon phantse akukho "ipleyiti emfutshane", kodwa kwanokufezekisa ulungelelwaniso oluphezulu. I-thin film lithium niobate (LNOI) electro-optic modulator kwi-insulator iye yaba yindlela ethembisayo yophuhliso. Ngophuhliso lwetekhnoloji yokulungiselela izinto ze-thin film lithium niobate kunye netekhnoloji yokukrola amaza, ukusebenza kakuhle kokuguqulwa kunye nokuhlanganiswa okuphezulu kwe-thin film lithium niobate electro-optic modulator iye yaba yintsimi yezemfundo yamazwe ngamazwe kunye noshishino.
Iimpawu zefilimu encinci ye-lithium niobate
E-United States, isicwangciso se-DAP AR senze olu vavanyo lulandelayo lwezinto ze-lithium niobate: ukuba iziko le-electronic revolution libizwa ngegama lezinto ze-silicon ezenza kube nokwenzeka, ngoko ke indawo yokuzalwa kwe-photonics revolution inokuthiywa ngegama le-lithium niobate. Oku kungenxa yokuba i-lithium niobate idibanisa isiphumo se-electro-optical, isiphumo se-acousto-optical, isiphumo se-piezoelectric, isiphumo se-thermoelectric kunye nesiphumo se-photorefractive kwenye, njengezinto ze-silicon kwicandelo le-optics.
Ngokuphathelele iimpawu zothumelo lwe-optical, izinto ze-InP zinokulahleka okukhulu kothumelo lwe-on-chip ngenxa yokufunxwa kokukhanya kwibhendi ye-1550nm esetyenziswa rhoqo. I-SiO2 kunye ne-silicon nitride zineempawu zothumelo ezilungileyo, kwaye ukulahleka kunokufikelela kwinqanaba le-~ 0.01dB/cm; Okwangoku, ukulahleka kwe-waveguide ye-thin-film lithium niobate waveguide kunokufikelela kwinqanaba le-0.03dB/cm, kwaye ukulahleka kwe-thin-film lithium niobate waveguide kunokuthi kuncitshiswe ngakumbi ngokuphuculwa okuqhubekayo kwenqanaba lobuchwepheshe kwixesha elizayo. Ke ngoko, izinto ze-thin film lithium niobate ziya kubonisa ukusebenza okuhle kwizakhiwo zokukhanya ezingasebenziyo ezifana nendlela ye-photosynthetic, i-shunt kunye ne-microring.
Ngokuphathelele ukuveliswa kokukhanya, yi-InP kuphela enokukwazi ukukhupha ukukhanya ngokuthe ngqo; Ke ngoko, ukuze kusetyenziswe ii-photon ze-microwave, kuyimfuneko ukwazisa umthombo wokukhanya osekelwe kwi-InP kwi-chip ye-photonic edibeneyo esekwe kwi-LNOI ngendlela yokubuyisela i-backloading okanye ukukhula kwe-epitaxial. Ngokuphathelele ukuguquguquka kokukhanya, kugxininiswe apha ngasentla ukuba izinto ze-lithium niobate zefilimu encinci kulula ukufezekisa i-bandwidth enkulu yokuguquguquka, i-voltage ephantsi ye-half-wave kunye nokulahleka okuphantsi kokudluliselwa kune-InP kunye ne-Si. Ngaphezu koko, ulungelelwaniso oluphezulu lokuguqulwa kwe-electro-optical kwezinto ze-lithium niobate zefilimu encinci lubalulekile kuzo zonke izicelo ze-microwave photon.
Ngokuphathelele indlela yokuhambisa i-optical, impendulo ye-electro-optical ekhawulezayo yezinto ezithin film lithium niobate yenza i-LNOI based optical switch ikwazi ukutshintsha i-optical routing ngesantya esiphezulu, kwaye ukusetyenziswa kwamandla kolu tshintsho olukhawulezayo nako kuphantsi kakhulu. Kwindlela eqhelekileyo yokusebenzisa itekhnoloji ye-microwave photon edibeneyo, i-chip ye-beamforming elawulwa ngokukhanya inamandla okutshintsha isantya esiphezulu ukuhlangabezana neemfuno zokuskena ngokukhawuleza kwe-beam, kwaye iimpawu zokusetyenziswa kwamandla aphantsi kakhulu zilungelelaniswe kakuhle neemfuno ezingqongqo zenkqubo ye-array ephased enkulu. Nangona i-InP based optical switch inokwenza i-high-speed optical path switching, iya kungenisa ingxolo enkulu, ngakumbi xa i-multilevel optical switch i-cascaded, i-noise coefficient iya konakala kakhulu. Izinto ze-Silicon, i-SiO2 kunye ne-silicon nitride zinokutshintsha kuphela iindlela ze-optical nge-thermo-optical effect okanye i-carrier dispersion effect, eneengxaki zokusetyenziswa kwamandla aphezulu kunye nesantya sokutshintsha kancinci. Xa ubungakanani be-array ye-phased array bukhulu, ayinakuhlangabezana neemfuno zokusetyenziswa kwamandla.
Ngokuphathelele i-optical amplification,i-amplifier ye-optical ye-semiconductor (I-SOA) esekelwe kwi-InP ivuthiwe ukuze isetyenziswe kwezorhwebo, kodwa ineengxaki ze-high noise coefficient kunye namandla aphantsi okukhupha i-saturation, nto leyo engayi kuncedayo ukusetyenziswa kwee-microwave photons. Inkqubo yokukhulisa i-parametric ye-thin-film lithium niobate waveguide esekelwe ekusebenzeni rhoqo kunye nokuguqulwa inokufezekisa ingxolo ephantsi kunye namandla aphezulu okukhulisa i-optical on-chip, enokufezekisa kakuhle iimfuno zobuchwepheshe be-microwave photon edibeneyo yokukhulisa i-optical on-chip.
Ngokuphathelele ukufunyanwa kokukhanya, i-thin film lithium niobate ineempawu ezilungileyo zokudlulisela ukukhanya kwi-1550 nm band. Umsebenzi wokuguqulwa kwe-photoelectric awunakwenzeka, ngoko ke kwii-microwave photon applications, ukuze kuhlangatyezwane neemfuno zokuguqulwa kwe-photoelectric kwi-chip. Ii-InGaAs okanye ii-Ge-Si detection units kufuneka zingeniswe kwii-LNOI based photonic integrated chips ngokufaka i-backloading welding okanye ukukhula kwe-epitaxial. Ngokuphathelele ukudibana ne-optical fiber, kuba i-optical fiber ngokwayo yi-SiO2 material, i-mode field ye-SiO2 waveguide ine-degree ephezulu yokufanisa ne-mode field ye-optical fiber, kwaye i-coupling yeyona ilula. Ububanzi be-mode field ye-waveguide enomda onamandla we-thin film lithium niobate imalunga ne-1μm, eyahlukileyo kakhulu kwi-mode field ye-optical fiber, ngoko ke ukuguqulwa kwe-mode spot efanelekileyo kufuneka kwenziwe ukuze kuhambelane ne-mode field ye-optical fiber.
Ngokuphathelele ukuhlanganiswa, ukuba izixhobo ezahlukeneyo zinamandla aphezulu okudibanisa kuxhomekeke ikakhulu kwirediyasi yokugoba ye-waveguide (echaphazeleka kukuthintelwa kwentsimi yendlela ye-waveguide). I-waveguide enomda kakhulu ivumela irediyasi encinci yokugoba, enceda ngakumbi ekufezekisweni kokuhlanganiswa okuphezulu. Ke ngoko, ii-waveguides ze-lithium niobate ezithin-film zinamandla okufezekisa ukuhlanganiswa okuphezulu. Ke ngoko, ukubonakala kwe-thin film lithium niobate kwenza kube nokwenzeka ukuba izinto ze-lithium niobate zidlale indima "ye-silicon" ebonakalayo. Ekusetyenzisweni kwee-photon ze-microwave, iingenelo ze-thin film lithium niobate zicacile ngakumbi.
Ixesha leposi: Epreli-23-2024