Inkcazo: Ubume obusisiseko kunye nomgaqo wokusebenza we-avalanche photodetector (Isixhobo sokufota seAPD) ziyaziswa, inkqubo yenguquko yesakhiwo sesixhobo ihlalutywa, imeko yophando lwangoku ishwankathelwa, kwaye uphuhliso lwexesha elizayo lwe-APD lufundwa ngokulindelekileyo.
1. Intshayelelo
I-photodetector sisixhobo esiguqula imiqondiso yokukhanya ibe yimiqondiso yombane.Kwisemiconductor photodetector, i-carrier-generated carrier evuyiswa yi-photon yesiganeko ingena kwisiphaluka sangaphandle phantsi kwe-voltage ye-bias esetyenzisiweyo kwaye yenza i-photocurrent enokulinganiswa.Nangona ekuphenduleni okuphezulu, i-PIN photodiode inokuvelisa kuphela iperi ye-electron-hole pairs kakhulu, esisisixhobo esingenayo inzuzo yangaphakathi.Ukuphendula okukhulu, i-avalanche photodiode (APD) ingasetyenziswa.Impembelelo yokukhulisa i-APD kwi-photocurrent isekelwe kwi-ionization collision effect.Phantsi kweemeko ezithile, ii-elektroni ezikhawulezayo kunye nemingxuma zinokufumana amandla aneleyo okungqubana neletisi ukuvelisa iperi entsha yeeperile ze-electron-hole.Le nkqubo i-reaction reaction, ukwenzela ukuba izibini ze-electron-hole pairs eziveliswa ngokufunxa ukukhanya kunokuvelisa inani elikhulu le-electron-hole pairs kwaye zenze i-photocurrent enkulu yesibini.Ngoko ke, i-APD inokuphendula okuphezulu kunye nokuzuza kwangaphakathi, okuphucula umlinganiselo wesignali-kwingxolo yesixhobo.I-APD iya kusetyenziswa ikakhulu kumgama omde okanye kwiinkqubo ezincinci zonxibelelwano lwefiber optical kunye nezinye izithintelo kumandla optical afunyenweyo.Okwangoku, iingcaphephe ezininzi zesixhobo sokubona zinethemba elikhulu malunga nemibono ye-APD, kwaye zikholelwa ukuba uphando lwe-APD luyimfuneko ukukhulisa ukhuphiswano lwamazwe ngamazwe kwiinkalo ezinxulumeneyo.
2. Uphuhliso lobuchwephesha lwei-avalanche photodetector(APD photodetector)
2.1 Izixhobo
(1)Siyi-photodetector
I-teknoloji ye-Si iteknoloji evuthiweyo esetyenziswa ngokubanzi kwintsimi ye-microelectronics, kodwa ayifanelekanga ukulungiswa kwezixhobo kwi-wavelength range ye-1.31mm kunye ne-1.55mm eyamkelwa ngokubanzi kwintsimi yonxibelelwano lwe-optical.
(2)Ge
Nangona impendulo ye-spectral ye-Ge APD ifanelekile kwiimfuno zokulahleka okuphantsi kunye ne-dispersion ephantsi kwi-transmission fiber optical, kukho ubunzima obukhulu kwinkqubo yokulungiselela.Ukongeza, i-electron ye-Ge kunye ne-ionization rate rate ratio isondele kwi-1, ngoko ke kunzima ukulungiselela izixhobo ze-APD eziphezulu.
(3)In0.53Ga0.47As/InP
Yindlela esebenzayo yokukhetha i-In0.53Ga0.47As njengoluhlu lwe-absorption ekhanyayo ye-APD kunye ne-InP njenge-multiplier layer.Incopho yokufunxa ye-In0.53Ga0.47As imathiriyeli yi-1.65mm, 1.31mm,1.55mm ubude be-wavelength malunga ne-104cm-1 i-coefficient ephezulu yokufunxa, eyona nto ikhethwayo yomaleko wokufunxa wesixhobo sokukhanya okwangoku.
(4)InGaAs ifotodetector/Ngaphakathiifotodetector
Ngokukhetha i-InGaAsP njengoluhlu oluthatha ukukhanya kunye ne-InP njenge-multiplier layer, i-APD ene-wavelength yempendulo ye-1-1.4mm, ukusebenza kakuhle kwe-quantum, ubumnyama obuphantsi kunye nokuzuza okuphezulu kwe-avalanche kunokulungiswa.Ngokukhetha amacandelo e-alloy ahlukeneyo, ukusebenza kakuhle kwe-wavelengths ethile kuyafezekiswa.
(5)InGaAs/InAlAs
I-In0.52Al0.48As impahla ine-gap yebhendi (1.47eV) kwaye ayifuni kuluhlu lwe-wavelength ye-1.55mm.Kukho ubungqina bokuthi i-In0.52Al0.48A encinci ye-epitaxial layer inokufumana iimpawu ezingcono zokuzuza kune-InP njenge-multiplicator layer phantsi kwemeko yenaliti ye-electron ecocekileyo.
(6)InGaAs/InGaAs (P) /InAlAs kunye ne-InGaAs/In (Al) GaAs/InAlAs
Izinga le-ionization yempembelelo yezinto eziphathekayo yinto ebalulekileyo echaphazela ukusebenza kwe-APD.Iziphumo zibonisa ukuba izinga le-ionization yokungqubuzana kwe-multiplier layer ingaphuculwa ngokuzisa i-InGaAs (P) /InAlAs kunye ne-In (Al) GaAs / InAlAs izakhiwo ze-superlattice.Ngokusebenzisa isakhiwo se-superlattice, ubunjineli bebhendi bungakwazi ukulawula ngokufanelekileyo i-asymmetric band edge discontinuity phakathi kwebhendi yokuqhubela phambili kunye nexabiso lebhendi ye-valence, kwaye uqinisekise ukuba ukuchithwa kwebhendi yokuqhubela phambili kukhulu kakhulu kunokuba i-valence band discontinuity (ΔEc>> ΔEv).Xa kuthelekiswa nezixhobo ezininzi ze-InGaAs, i-InGaAs/InAlAs i-quantum kakuhle i-electron ionization rate (a) inyuke kakhulu, kwaye ii-electron kunye nemingxuma zifumana amandla angaphezulu.Ngenxa ye-ΔEc >> ΔEv, kunokulindelwa ukuba amandla afunyenwe ngama-electron anyusa izinga le-ionization ye-electron ngaphezu kwegalelo lamandla omngxuma kwizinga le-ionization yomngxuma (b).Umlinganiselo (k) wezinga le-electron ionization ukuya kumngxuma izinga le-ionization liyenyuka.Ke ngoko, imveliso ephezulu yokufumana i-bandwidth (i-GBW) kunye nokusebenza kwengxolo ephantsi inokufumaneka ngokusebenzisa izakhiwo ze-superlattice.Nangona kunjalo, le InGaAs/InAlAs quantum well structure APD, enokunyusa ixabiso le-k, kunzima ukuyisebenzisa kubamkeli bamehlo.Oku kungenxa yokuba i-multiplier factor echaphazela ukusabela okuphezulu kuthintelwe ngumsinga omnyama, hayi ingxolo yokuphindaphinda.Kwesi sakhiwo, umsinga omnyama ubangelwa ikakhulu yimpembelelo ye-tunneling ye-InGaAs kakuhle umaleko kunye ne-gap band emxinwa, ngoko ke ukuqaliswa kwe-alloy gap quaternary alloy, njenge-InGaAsP okanye i-InAlGaAs, endaweni ye-InGaAs njengomaleko wequla. yesakhiwo somthombo we-quantum sinokucinezela umbane omnyama.
Ixesha lokuposa: Nov-13-2023