Umgaqo wokusebenzai-laser ye-semiconductor
Okokuqala, iimfuno zeparameter ze-laser ze-semiconductor ziyaziswa, ikakhulu kubandakanya ezi zinto zilandelayo:
1. Ukusebenza kwe-Photoelectric: kubandakanya umlinganiselo wokuphela, ububanzi bomgca oguqukayo kunye nezinye iiparameter, ezi parameter zichaphazela ngokuthe ngqo ukusebenza kwee-laser ze-semiconductor kwiinkqubo zonxibelelwano.
2. Iiparameter zesakhiwo: ezinje ngobukhulu obukhanyayo kunye nolungiselelo, inkcazo yesiphelo sokukhupha, ubungakanani bofakelo kunye nobungakanani besakhelo.
3. Ubude beWavelength: Uluhlu lwewavelength lwelaser ye-semiconductor yi-650 ~ 1650nm, kwaye ukuchaneka kuphezulu.
4. Umsinga woMda (Ith) kunye nomsinga osebenzayo (lop): Ezi parameters zimisela iimeko zokuqalisa kunye nemeko yokusebenza yelaser ye-semiconductor.
5. Amandla kunye ne-voltage: Ngokulinganisa amandla, i-voltage kunye nomsinga we-laser ye-semiconductor emsebenzini, ii-PV, i-PI kunye ne-IV curves zinokutsalwa ukuze kuqondwe iimpawu zazo zokusebenza.
Umgaqo wokusebenza
1. Iimeko zokufumana: Ukusasazwa kwe-inversion kwe-charge carriers kwi-lasing medium (ingingqi esebenzayo) kuyasekwa. Kwi-semiconductor, amandla ee-electron amelwa luchungechunge lwamanqanaba amandla aphantse aqhubeke. Ke ngoko, inani lee-electron ezantsi kwe-conduction band kwi-high energy state kufuneka libe likhulu kakhulu kunenani lemingxuma ephezulu ye-valence band kwi-low energy state phakathi kwemimandla emibini ye-energy band ukuze kufezekiswe i-inversion yenombolo ye-particle. Oku kufezekiswa ngokusebenzisa i-positive bias kwi-homojunction okanye i-heterojunction kunye nokufaka ii-carriers ezifunekayo kwi-active layer ukuze kuvuseleleke ii-electron kwi-low energy valence band ukuya kwi-higher energy conduction band. Xa inani elikhulu lee-electron kwi-reversed particle population state lidibana kwakhona nemingxuma, ukukhutshwa okukhuthazwayo kwenzeka.
2. Ukuze ufumane imitha evuselelayo ehambelanayo, imitha evuselelayo kufuneka yondliwe izihlandlo ezininzi kwi-optical resonator ukuze kwenziwe i-laser oscillation, i-resonator yelaser yenziwe ngumphezulu wendalo we-crystal ye-semiconductor njengesipili, odla ngokugqunywa esiphelweni sokukhanya ngefilimu ye-dielectric ebonakalisa ukukhanya okuphezulu, kwaye umphezulu ogudileyo ugqunywe ngefilimu ebonakalisa ukukhanya encitshisiweyo. Kwilaser ye-semiconductor ye-Fp cavity (Fabry-Perot cavity), i-FP cavity inokwakhiwa ngokulula ngokusebenzisa i-natural cleavage plane ethe nkqo kwi-pn junction plane yekristale.
(3) Ukuze kwenziwe i-oscillation ezinzileyo, i-laser medium kufuneka ikwazi ukubonelela nge-gain enkulu ngokwaneleyo yokuhlawula ilahleko ye-optical ebangelwe yi-resonator kunye nelahleko ebangelwe yi-laser output evela kumphezulu we-cavity, kwaye inyuse rhoqo i-light field kwi-cavity. Oku kufuneka kube ne-current injection enamandla ngokwaneleyo, oko kukuthi, kukho i-particle number inversion eyaneleyo, okukhona i-particle number inversion iphezulu, kokukhona i-gain inkulu, oko kukuthi, imfuneko kufuneka ihlangabezane nemeko ethile ye-current threshold. Xa i-laser ifikelela kwi-threshold, ukukhanya okunobude obuthile be-wavelength kunokuvakala kwi-cavity kwaye kwandiswe, kwaye ekugqibeleni kwenze i-laser kunye ne-continuous output.
Imfuneko yokusebenza
1. I-bandwidth kunye nesantya sokuguqula: ii-laser ze-semiconductor kunye netekhnoloji yazo yokuguqula zibalulekile kunxibelelwano lwe-optical olungenazingcingo, kwaye i-bandwidth kunye nesantya sokuguqula sichaphazela ngokuthe ngqo umgangatho wonxibelelwano. I-laser eguquliweyo ngaphakathi (i-laser eguquliweyo ngokuthe ngqo) ifanelekile kwiinkalo ezahlukeneyo zonxibelelwano lwefayibha ye-optical ngenxa yokudluliselwa kwayo ngesantya esiphezulu kunye nexabiso eliphantsi.
2. Iimpawu zeSpectral kunye neempawu zemodulation: Ii-Semiconductor distributed feedback lasers (I-laser ye-DFB) ziye zaba ngumthombo wokukhanya obalulekileyo kunxibelelwano lwefayibha ye-optical kunye nonxibelelwano lwe-optical yesithuba ngenxa yeempawu zazo ezibalaseleyo ze-spectral kunye neempawu ze-modulation.
3. Ixabiso kunye nemveliso yobuninzi: Iilaser ze-semiconductor kufuneka zibe neengenelo zemveliso ebiza kancinci kunye nemveliso yobuninzi ukuze zihlangabezane neemfuno zemveliso enkulu kunye nezicelo.
4. Ukusetyenziswa kwamandla kunye nokuthembeka: Kwiimeko zesicelo ezifana namaziko edatha, ii-laser ze-semiconductor zifuna ukusetyenziswa kwamandla okuphantsi kunye nokuthembeka okuphezulu ukuqinisekisa ukusebenza okuzinzileyo kwexesha elide.

Ixesha leposi: Septemba-19-2024




