Umgaqo wokusebenza kunye neentlobo eziphambili ze-laser ye-semiconductor

Umgaqo wokusebenza kunye neentlobo eziphambili zei-laser ye-semiconductor

I-semiconductorIidiode zelaser, ngenxa yokusebenza kwazo okuphezulu, ukwahlulahlula kwe-miniaturization kunye nokwahluka kwe-wavelength, zisetyenziswa kakhulu njengezinto eziphambili zobuchwepheshe be-optoelectronic kwiinkalo ezifana nonxibelelwano, unyango kunye nokusebenza kwemizi-mveliso. Eli nqaku lizazisa ngakumbi umgaqo wokusebenza kunye neentlobo zee-semiconductor lasers, ezilungele ukhetho lwabaphandi abaninzi be-optoelectronic.

1. Umgaqo wokukhupha ukukhanya we-semiconductor lasers

Umgaqo wokukhanya kwee-laser ze-semiconductor usekelwe kwisakhiwo sebhendi, utshintsho lwe-elektroniki kunye nokukhutshwa okukhuthazwayo kwezinto ze-semiconductor. Izinto ze-semiconductor luhlobo lwezinto ezine-bandgap, equka i-valence band kunye ne-conduction band. Xa izinto zikwimeko yomhlaba, ii-electron zizalisa i-valence band ngelixa kungekho electron kwi-conduction band. Xa intsimi ethile yombane isetyenziswa ngaphandle okanye kufakwe umsinga, ezinye ii-electron ziya kutshintshela kwi-valence band ukuya kwi-conduction band, zenze ii-electron-hole pairs. Ngexesha lenkqubo yokukhululwa kwamandla, xa ezi zibini ze-electron-hole pairs zivuselelwa lihlabathi langaphandle, ii-photons, oko kukuthi, ii-laser, ziya kuveliswa.

2. Iindlela zokuchukumisa ze-semiconductor lasers

Kukho iindlela ezintathu zokuchukumisa iileyiza ze-semiconductor, ezizezi: uhlobo lwe-electric injection, uhlobo lwe-optical pump kunye nohlobo lwe-high-energy electron beam excitation.

Iileyiza ze-semiconductor ezifakwe ngombane: Ngokubanzi, zii-diode ze-semiconductor surface-junction ezenziwe ngezinto ezifana ne-gallium arsenide (GaAs), i-cadmium sulfide (CdS), i-indium phosphide (InP), kunye ne-zinc sulfide (ZnS). Ziyachwayitiswa ngokufaka umbane ecaleni kwe-forward bias, nto leyo evelisa ukukhutshwa okukhuthazwayo kummandla we-junction plane.

Iileyiza ze-semiconductor ezipompelwe ngokubonakalayo: Ngokubanzi, iikristale ze-semiconductor zohlobo lwe-N okanye lwe-P (ezifana neGaAS,InAs,InSb, njl.njl.) zisetyenziswa njengesixhobo esisebenzayo, kwayeilezaikhutshwa zezinye iilaser isetyenziswa njenge-optically pumped excitation.

Iileyiza ze-semiconductor ezisebenzisa imisebe ye-electron enamandla aphezulu: Ngokubanzi, zisebenzisa iikristale ze-semiconductor ze-N-type okanye ze-P-type (ezifana ne-PbS,CdS,ZhO, njl.njl.) njengesixhobo esisebenzayo kwaye ziyavuya ngokufaka umqadi we-electron onamandla aphezulu ngaphandle. Phakathi kwezixhobo ze-semiconductor laser, leyo isebenza ngcono kwaye isetyenziswa ngokubanzi yilayiza ye-diode ye-GaAs efakwe ngombane enesakhiwo esiphindwe kabini.

3. Iindidi eziphambili ze-semiconductor lasers

I-Active Region ye-semiconductor laser yindawo ephambili yokwenziwa kwe-photon kunye nokwandiswa, kwaye ubukhulu bayo buyi-micrometer ezimbalwa kuphela. Izakhiwo ze-waveguide zangaphakathi zisetyenziselwa ukunciphisa ukusasazeka kwe-lateral ye-photons kunye nokuphucula uxinano lwamandla (ezifana ne-ridge waveguides kunye ne-buried heterojunctions). I-laser isebenzisa uyilo lwe-heat sink kwaye ikhetha izixhobo eziphezulu zokuqhuba ubushushu (ezifana ne-copper-tungsten alloy) zokusasaza ubushushu ngokukhawuleza, okunokuthintela ukushukuma kwe-wavelength okubangelwa kukushisa kakhulu. Ngokwesakhiwo sabo kunye neemeko zesicelo, ii-semiconductor lasers zinokuhlulwahlulwa zibe ziindidi ezine ezilandelayo:

I-Edge-Emitting Laser (EEL)

I-laser iphuma kumphezulu oqhekekileyo kwicala le-chip, yenza indawo efana ne-elliptical (ene-Angle yokwahlukana emalunga ne-30°×10°). Amaza obude obuqhelekileyo aquka i-808nm (yokupompa), i-980 nm (yokunxibelelana), kunye ne-1550 nm (yokunxibelelana ngefayibha). Isetyenziswa kakhulu kwiindlela zokusika ezisebenza ngamandla amakhulu kwimizi-mveliso, imithombo yokupompa nge-laser yefayibha, kunye neenethiwekhi zonxibelelwano lwe-optical backbone.

2. I-Laser ekhupha umphezulu ongaphakathi kwi-vertical Cavity Surface (VCSEL)

I-laser ikhutshwa ngokuthe nkqo kumphezulu we-chip, ine-beam ejikelezayo nelinganayo (i-divergence Angle <15°). Idibanisa i-distributed Bragg reflector (DBR), isusa imfuneko ye-external reflector. Isetyenziswa kakhulu kwi-3D sensing (njengokuqaphela ubuso befowuni), unxibelelwano olufutshane lwe-optical (amaziko edatha), kunye ne-LiDAR.

3. I-Quantum Cascade Laser (QCL)

Ngokusekelwe kutshintsho lwe-cascade lwee-electron phakathi kwe-quantum Wells, ubude be-wavelength bugubungela uluhlu lwe-infrared oluphakathi ukuya kolukude (3-30 μm), ngaphandle kwesidingo sokuguqulwa kwenani labantu. Ii-photon ziveliswa ngotshintsho lwe-intersubband kwaye zihlala zisetyenziswa kwizicelo ezifana nokubona igesi (njengokubona i-CO₂), ukuthathwa kwemifanekiso ye-terahertz, kunye nokubeka esweni okusingqongileyo.

4. I-Laser ehlengahlengiswayo

Uyilo lwe-laser ehlengahlengiswayo (i-grating/prism/MEMS mirror) lunokufikelela kuluhlu lwe-wavelength tuning oluyi-±50 nm, kunye nobubanzi obuncinci bomgca (<100 kHz) kunye nomlinganiselo wokulahlwa kwe-side-mode ephezulu (>50 dB). Isetyenziswa rhoqo kwizicelo ezifana nonxibelelwano lwe-dense wavelength division multiplexing (DWDM), uhlalutyo lwe-spectral, kunye ne-biomedical imaging. Ii-laser ze-semiconductor zisetyenziswa kakhulu kwizixhobo ze-laser zonxibelelwano, izixhobo zokugcina i-laser yedijithali, izixhobo zokucubungula i-laser, izixhobo zokumakisha kunye nokupakisha i-laser, ukuseta uhlobo kunye nokuprinta i-laser, izixhobo zonyango ze-laser, izixhobo zokufumanisa umgama we-laser kunye ne-collimation, izixhobo ze-laser kunye nezixhobo zokuzonwabisa kunye nemfundo, izinto ze-laser kunye namacandelo, njl. Ziyinxalenye yezinto eziphambili zoshishino lwe-laser. Ngenxa yoluhlu olubanzi lwezicelo, kukho iimpawu ezininzi kunye nabavelisi bee-laser. Xa ukhetha, kufuneka kusekelwe kwiimfuno ezithile kunye namacandelo ezicelo. Abavelisi abahlukeneyo banezicelo ezahlukeneyo kwiinkalo ezahlukeneyo, kwaye ukhetho lwabavelisi kunye nee-laser kufuneka lwenziwe ngokwentsimi yesicelo yokwenyani yeprojekthi.