Umgaqo wokusebenza kunye neentlobo eziphambili ze-laser semiconductor

Umgaqo wokusebenza kunye neentlobo eziphambili zesemiconductor laser

SemiconductorIidiode zeLaser, kunye nokusebenza kwabo okuphezulu, i-miniaturization kunye ne-wavelength diversity, zisetyenziswa ngokubanzi njengezona nxalenye eziphambili zeteknoloji ye-optoelectronic kwiinkalo ezifana nokunxibelelana, ukhathalelo lwezonyango kunye nokulungiswa kwamashishini. Eli nqaku lazisa ngakumbi umgaqo wokusebenza kunye neentlobo ze-lasemiconductor lasers, ezifanelekileyo kwireferensi yokukhetha uninzi lwabaphandi be-optoelectronic.

1. Umgaqo wokukhanya okhupha i-semiconductor lasers

Umgaqo we-luminescence we-lasemiconductor lasers usekelwe kwisakhiwo sebhendi, iinguqu ze-elektroniki kunye nokukhutshwa okukhuthazwayo kwezinto ze-semiconductor. Izinto eziphathekayo ze-Semiconductor luhlobo lwempahla ene-bandgap, equka i-valence band kunye ne-conduction band. Xa izinto zikwimeko yomhlaba, ii-electron zigcwalisa ibhendi ye-valence ngelixa kungekho zi-electron kwibhendi yokuqhuba. Xa umbane othile usetyenziswa ngaphandle okanye i-current injected, ezinye ii-electron ziya kutshintsha ukusuka kwi-valence band ukuya kwi-conduction band, zenze izibini ze-electron-hole. Ngethuba lenkqubo yokukhutshwa kwamandla, xa ezi zibini ze-electron-hole zikhuthazwa yilizwe langaphandle, iifotoni, oko kukuthi, i-lasers, ziya kuveliswa.

2. Iindlela zokuzonwabisa ze-lasemiconductor lasers

Zintathu iindlela zokuvuselela ii-laser ze-semiconductor, ezizezi, uhlobo lwenaliti yombane, uhlobo lwempompo ye-optical kunye ne-high-energy electron beam beam uhlobo lokuvuselela.

Ii-lases ze-semiconductor ezifakwe ngombane: Ngokubanzi, zii-semiconductor surface-junction diode ezenziwe ngezinto ezifana ne-gallium arsenide (GaAs), i-cadmium sulfide (CdS), i-indium phosphide (InP), kunye ne-zinc sulfide (ZnS). Bachulumancile ngokutofa okwangoku ecaleni komkhethe ohamba phambili, ukuvelisa ukukhutshwa okuvuselelweyo kummandla wenqwelomoya yesiphambuka.

Iilaser zesemiconductor ezimpontshwa ngokubonakalayo: Ngokubanzi, uhlobo lwe-N okanye uhlobo lwe-P-ikristale enye ye-semiconductor (enjenge-GaAS, i-InAs, i-InSb, njl. njl.) zisetyenziswa njengento yokusebenza, kunyelaserekhutshwa zezinye iilaser isetyenziswa njenge excitation optically pumped.

I-electron-energy high-energy beam-excited lasers semiconductor lasers: Ngokubanzi, basebenzisa i-N-type okanye i-P-type semiconductor iikristale enye (ezifana ne-PbS, i-CdS, i-ZhO, njl.) njengento esebenzayo kwaye bachulumancile ngokutofa umqadi we-electron wamandla aphezulu ukusuka ngaphandle. Phakathi kwezixhobo ze-laser ye-semiconductor, leyo inentsebenzo engcono kunye nesicelo esibanzi yi-laser ye-GaAs diode efakwe ngombane ene-heterostructure ephindwe kabini.

3. Iintlobo eziphambili zeelaser ze-semiconductor

Ummandla oSebenzayo we-laser semiconductor yindawo engundoqo yokuvelisa i-photon kunye nokukhulisa, kwaye ubukhulu bayo buyi-micrometers ezimbalwa. Izakhiwo ze-waveguide zangaphakathi zisetyenziselwa ukunqanda ukusasazwa ngasemva kweefotoni kunye nokuphucula uxinano lwamandla (ezinje ngamaza amaza amaza kunye ne-heterojunctions engcwatywe). I-laser ithatha idizayini yokutshisa ubushushu kwaye ikhethe izinto eziphezulu ze-thermal conductivity (ezifana ne-copper-tungsten alloy) yokutshatyalaliswa kobushushu obukhawulezayo, obunokuthintela ukukhukuliseka kwamaza okubangelwa kukufudumala. Ngokobume bazo kunye neemeko zesicelo, ii-lases ze-semiconductor zinokuhlelwa kwezi ndidi zilandelayo:

ILaser ekhupha iEdge (EEL)

I-laser iphuma kwi-cleavage surface kwicala le-chip, eyenza i-elliptical spot (nge-divergence Angle malunga ne-30 ° × 10 °). Amaza aqhelekileyo aquka i-808nm (yokumpompa), i-980 nm (ukunxibelelana), kunye ne-1550 nm (ukunxibelelana kwefayibha). Isetyenziswa kakhulu kumandla aphezulu wokusika kwimizi-mveliso, imithombo yokumpompa i-fiber laser, kunye nothungelwano lwe-optical backbone network.

2. ILaser yokuPhuma kwiCavity Surface (VCSEL)

I-laser ikhutshwe nge-perpendicularly kumphezulu we-chip, kunye nesetyhula kunye ne-symmetrical beam (i-divergence Angle <15 °). Idibanisa i-Bragg reflector (DBR) esasazwayo, isusa imfuno yesibonisi sangaphandle. Isetyenziswa ngokubanzi kwi-3D sensing (efana nokuqaphela ubuso befowuni), unxibelelwano olufutshane olufutshane (amaziko edatha), kunye ne-LiDAR.

3. I-Quantum Cascade Laser (QCL)

Ngokusekwe kwinguqu ye-cascade yee-electron phakathi kwe-quantum Wells, ubude be-wavelength bugubungela uluhlu lwe-infrared oluphakathi ukuya kude (3-30 μm), ngaphandle kwesidingo sokuguqulwa kwabantu. Iifoto ziveliswa ngeenguqu ze-intersubband kwaye ziqhele ukusetyenziswa kwizicelo ezifana ne-gas sensing (efana nokufumanisa i-CO₂), i-terahertz imaging, kunye nokubeka iliso kwendalo.

4. I-Laser ye-Tunable

Idizayini yecangci yangaphandle yelaser etyibilikayo (igrayiti/prism / isibuko se-MEMS) inokufikelela kuluhlu lwe-wavelength tuning ± 50 nm, kunye nobubanzi obumxinwa (<100 kHz) kunye ne-high side-mode rejection ratio (>50 dB). Isetyenziswa ngokuqhelekileyo kwizicelo ezifana ne-dense wavelength division multiplexing (DWDM) unxibelelwano, uhlalutyo lwe-spectral, kunye ne-biomedical imaging. I-laser ye-semiconductor isetyenziswa ngokubanzi kwizixhobo ze-laser zonxibelelwano, izixhobo zokugcina i-laser yedijithali, izixhobo zokusetyenzwa kwe-laser, ukuphawula kwe-laser kunye nokupakishwa kwezixhobo, i-laser typesetting kunye noshicilelo, izixhobo zonyango lwe-laser, umgama we-laser kunye nezixhobo zokubona i-collimation, izixhobo ze-laser kunye nezixhobo zokuzonwabisa kunye nemfundo, amacandelo e-laser kunye namacandelo, njl. Ngenxa yoluhlu olubanzi lwezicelo, kukho iibrendi ezininzi kunye nabavelisi beelases. Xa usenza ukhetho, kufuneka lusekelwe kwiimfuno ezithile kunye nemimandla yesicelo. Abavelisi abahlukeneyo banezicelo ezahlukeneyo kwiinkalo ezahlukeneyo, kwaye ukukhethwa kwabavelisi kunye ne-lasers kufuneka kwenziwe ngokwentsimi yesicelo sangempela seprojekthi.