Imodyuli yamva nje ye-ultra-high extinction ratio ye-electro-optic

Okona kumvaultra-high extinction ratio electro-optic modulator

I-on-chip electro-optical modulators (i-silicon-based, i-triquinoid, ifilimu encinci ye-lithium niobate, njl.) zineenzuzo zokuxinana, isantya esiphezulu kunye nokusetyenziswa kwamandla aphantsi, kodwa kusekho imingeni emikhulu yokufezekisa ukumodareyitha kokuqina okuguquguqukayo kunye ne-ultra-high extinction ratio. Kutshanje, abaphandi kwiZiko loPhando elidibeneyo leFiber Optic Sensing kwiyunivesithi yaseTshayina benze impumelelo enkulu kwicandelo le-ultra-high extinction ratio ye-electro-optical modulators kwi-silicon substrates. Ngokusekwe kuluhlu oluphezulu lwe-optical filter structure, i-on-chip siliconimodyuli ye-electro-opticngomlinganiselo wokutshabalala ukuya kuthi ga kwi-68 dB iqondwa okokuqala. Ubungakanani kunye nokusetyenziswa kwamandla ziodolo ezimbini zobukhulu obuncinci kunobuqhelekileyoImodyuli ye-AOM, kunye nokusebenziseka kwesicelo sesixhobo siqinisekisiwe kwi-laboratory system ye-DAS.

Umzobo 1 Umzobo weSchematic wesixhobo sovavanyo lwe-ultraimodyuli ephezulu yokutshabalala kwe-electro-optic

I-silicon-basedimodyuli ye-electro-opticalesekwe kubume obudityanisiweyo bokucoca i-microring iyafana nesihluzo sombane sakudala. Imodyuli ye-electro-optic ifezekisa ukuhluza i-bandpass ye-flat kunye ne-high out-of-band rejection ratio (> 60 dB) ngokusebenzisa uchungechunge lokudityaniswa kwe-silicon-based microring resonators. Ngoncedo lwe-Pin-type electro-optical phase shifter kwi-microring nganye, i-spectrum ye-transmittance ye-modulator ingatshintshwa kakhulu kwi-voltage ephantsi esetyenzisiweyo (<1.5 V). Umyinge ophezulu wokulahlwa kwebhendi udityaniswe neempawu zokuqengqelekela ezantsi zesihluzo zenza ukuba ubunzulu bokukhanya kwegalelo kufutshane neresonant wavelength ukuba bulungiswe ngochasano olukhulu kakhulu, olunceda kakhulu kwimveliso ye-ultra-high extinction ratio light pulses.

Ukuqinisekisa ukukwazi ukumodareyitha kwemodyuli ye-electro-optic, iqela laqala labonisa ukuguquguquka kokuhanjiswa kwesixhobo kunye nombane we-DC kwi-wavelength yokusebenza. Ingabonwa ukuba emva kwe-1 V, ukuhanjiswa kwehle kakhulu ngaphezulu kwe-60 dB. Ngenxa yokunciphisa iindlela eziqhelekileyo zokujonga i-oscilloscope, iqela lophando lamkela indlela yokulinganisa i-self-heterodyne interference, kwaye isebenzisa uluhlu olukhulu oluguquguqukayo lwe-spectrometer ukubonakalisa umlinganiselo we-ultra-high dynamic extinction ye-modulator ngexesha lokumodareyitha kwe-pulse. Iziphumo zovavanyo zibonisa ukuba i-pulse light light yemodyuli inomlinganiselo wokutshabalala ukuya kuthi ga kwi-68 dB, kunye ne-extinction ratio engaphezulu kwe-65 dB kufutshane neendawo ezininzi ze-wavelength. Emva kobalo oluneenkcukacha, owona mbane wombane we-RF olayishwe kwi-electrode umalunga ne-1 V, kwaye ukusetyenziswa kwamandla okumodareyitha yi-3.6 mW kuphela, eziodolo ezimbini zobukhulu ezincinci kunosetyenziso lwamandla lwemodyuli ye-AOM eqhelekileyo.

Ukusetyenziswa kwe-Silicon esekelwe kwimodyuli ye-electro-optic kwinkqubo ye-DAS ingasetyenziswa kwinkqubo yokufumanisa ngokuthe ngqo kwe-DAS ngokupakisha i-on-chip modulator. Ihluke kwi-interferometry ye-heterodyne ye-interferometry yendawo jikelele, imodi yokuchithwa kwe-interferometry ye-Michelson engalinganiyo iyamkelwa kule nkqubo, ukwenzela ukuba i-optical frequency shift effect ye-modulator ayifuni. Utshintsho lwesigaba olubangelwa izibonakaliso ze-sinusoidal vibration zibuyiselwa ngempumelelo ngokuchithwa kwe-Rayleigh izibonakaliso ezihlakazekileyo zeziteshi ze-3 usebenzisa i-algorithm ye-IQ ye-demodulation. Iziphumo zibonisa ukuba i-SNR imalunga ne-56 dB. Ukusasazwa koxinaniso lwamandla okubonwayo kulo lonke ubude be-sensor fiber kuluhlu lwefrikhwensi yomqondiso ± 100 Hz kuphandwa ngakumbi. Ngaphandle kophawu olubalaseleyo kwindawo yokungcangcazela kunye namaxesha amaninzi, kuqatshelwa ukuba kukho iimpendulo ezithile zoxinaniso lwamandla okubonwa kwezinye iindawo. Ingxolo ye-crosstalk kuluhlu lwe-± 10 Hz nangaphandle kwendawo yokungcangcazela ilinganiselwa kubude befiber, kwaye umyinge we-SNR kwindawo ayikho ngaphantsi kwe-33 dB.

Umfanekiso wesi-2

umzobo weSchematic we-optical fibre esasazwa ngenkqubo yokuva okuvakalayo.

b Uxinzelelo lwembonakalo yamandla ophawu oluthotyiweyo.

c, d iifrikhwensi zokungcangcazela kufutshane nonikezelo loxinaniso lwembonakalo yombane ecaleni kwefiber yezivammbo.

Olu phononongo lolokuqala ukufezekisa imodyuli ye-electro-optical kwi-silicon ene-ultra-high extinction ratio (68 dB), kwaye isetyenziswe ngempumelelo kwiinkqubo ze-DAS, kwaye isiphumo sokusebenzisa imodyuli ye-AOM yorhwebo isondele kakhulu, kwaye ubungakanani kunye nokusetyenziswa kwamandla ziodolo ezimbini zobukhulu ezincinci kunomva, okulindeleke ukuba zidlale indima ephambili kwisizukulwana esilandelayo se-fiber sensia-power . Ukongeza, inkqubo yokwenziwa kweCMOS enkulu kunye nokukwazi ukudityaniswa kwe-chip kwi-silicon-basedizixhobo ze-optoelectronicinokukhuthaza kakhulu ukuphuhliswa kwesizukulwana esitsha sexabiso eliphantsi, iimodyuli ezidityanisiweyo ze-monolithic ezininzi ezisekelwe kwiinkqubo zokuva i-fiber ze-chip.