Uphando lwamva nje malunga ne-laser ze-semiconductor ezinemibala emibini

Uphando lwamva nje malunga ne-laser ze-semiconductor ezinemibala emibini

Iilaser zediski ze-semiconductor (ii-laser ze-SDL), ezaziwa ngokuba ziilaser eziphumayo ngaphandle kwe-vertical external cavity surface-emitting (VECSEL), ziye zatsala ingqalelo enkulu kwiminyaka yakutshanje. Zidibanisa iingenelo ze-semiconductor gain kunye nee-solid-state resonators. Ayipheleli nje ekunciphiseni umda wendawo yokukhupha umoya wenkxaso ye-single-mode kwiilaser ze-semiconductor eziqhelekileyo, kodwa ikwanoyilo lwe-bandgap ye-semiconductor eguquguqukayo kunye neempawu eziphezulu ze-gain material. Ingabonakala kwiimeko ezahlukeneyo zesicelo, ezifana nengxolo ephantsi.i-laser enobubanzi obumxinwaimveliso, ukuveliswa kwepulse ephindaphindayo kakhulu, ukuveliswa kwe-harmonic ephezulu, kunye netekhnoloji yeenkwenkwezi zesikhokelo se-sodium, njl. Ngokuhambela phambili kwetekhnoloji, kuye kwabekwa phambili iimfuno eziphezulu zokuguquguquka kwe-wavelength yayo. Umzekelo, imithombo yokukhanya edibeneyo ye-dual-wavelength ibonakalise ixabiso eliphezulu kakhulu lesicelo kwiindawo ezikhulayo ezifana ne-anti-interference lidar, i-holographic interferometry, i-wavelength division multiplexing communication, i-mid-infrared okanye i-terahertz generation, kunye ne-multi-color optical frequency combs. Indlela yokufezekisa ukukhanya okuphezulu kwe-dual-color emission kwi-semiconductor disc lasers kunye nokuthintela ngempumelelo ukhuphiswano lwe-gain phakathi kwe-multiple wavelengths ibisoloko ilubunzima bophando kweli candelo.

Kutshanje, kukho umbala onemibala emibinii-laser ye-semiconductorIqela laseTshayina licebise uyilo olutsha lwetshiphusi ukujongana nalo mceli mngeni. Ngophando olunzulu lwamanani, bafumanise ukuba ukulawula ngokuchanekileyo i-quantum well gain filtering kunye ne-semiconductor microcavity filtering effects kulindeleke ukuba kufezekiswe ulawulo oluguquguqukayo lwe-dual-color gain. Ngokusekelwe koku, iqela liyile ngempumelelo i-960/1000 nm high-brightness gain chip. Le laser isebenza kwimo yesiseko kufutshane nomda we-diffraction, kunye nokukhanya okuphumayo okuphezulu okumalunga ne-310 MW/cm²sr.

Umaleko wokufumana i-disk ye-semiconductor ungqindilili oluncinci lwe-micrometers, kwaye i-microcavity ye-Fabry-Perot yenziwa phakathi kwe-semiconductor-air interface kunye ne-Bragg reflector esezantsi esasazwe. Ukuphatha i-microcavity ye-semiconductor njenge-spectral filter eyakhelwe ngaphakathi ye-chip kuya kuguqula i-gain ye-quantum well. Okwangoku, i-microcavity filtering effect kunye ne-semiconductor gain zinezinga ezahlukeneyo zokushukuma kobushushu. Zidibene nolawulo lobushushu, ukutshintsha kunye nokulawula ubude be-output wavelengths kunokufezekiswa. Ngokusekelwe kwezi mpawu, iqela libalile kwaye labeka i-gain peak ye-quantum well kwi-950 nm kubushushu be-300 K, kunye nezinga lokushukuma kobushushu le-gain wavelength limalunga ne-0.37 nm/K. Emva koko, iqela liyile i-longitudinal constraint factor ye-chip lisebenzisa indlela ye-transmission matrix, kunye ne-peak wavelengths emalunga ne-960 nm kunye ne-1000 nm ngokwahlukeneyo. Ii-simulations zityhile ukuba izinga lokushukuma kobushushu laliyi-0.08 nm/K kuphela. Ngokusebenzisa iteknoloji yokufaka umphunga we-metal-organic chemical vapor ekukhuleni kwe-epitaxial kunye nokwenza ngcono inkqubo yokukhula rhoqo, ii-gain chips ezikumgangatho ophezulu zenziwe ngempumelelo. Iziphumo zokulinganisa ze-photoluminescence zihambelana ngokupheleleyo neziphumo zokulinganisa. Ukunciphisa umthwalo wobushushu kunye nokufezekisa uthumelo lwamandla aphezulu, inkqubo yokupakisha ii-chip ze-semiconductor-diamond iye yaphuhliswa ngakumbi.

Emva kokugqiba ukupakishwa kweetshiphusi, iqela lenze uvavanyo olupheleleyo lokusebenza kwelaser. Kwimo yokusebenza eqhubekayo, ngokulawula amandla epompo okanye ubushushu besinki yobushushu, ubude bomda wokukhupha bunokulungiswa ngokuguquguqukayo phakathi kwe-960 nm kunye ne-1000 nm. Xa amandla epompo ekwinqanaba elithile, ilaser inokuphumeza ukusebenza kwe-dual-wave length, kunye nesithuba sobude bomda esifikelela kwi-39.4 nm. Ngeli xesha, amandla aphezulu obude bomda oqhubekayo afikelela kwi-3.8 W. Okwangoku, ilaser isebenza kwimo esisiseko kufutshane nomda wokudibanisa, kunye ne-beam quality factor M² eyi-1.1 kuphela kunye nokukhanya okuphezulu okumalunga ne-310 MW/cm²sr. Iqela likwaqhube uphando malunga nokusebenza kwe-quasi-continuous wave kweilezaIsignali ye-sum frequency ibonwe ngempumelelo ngokufaka i-LiB₃O₅ nonlinear optical crystal kwi-resonant cavity, okuqinisekisa ukuhambelana kwamaza ombane amabini.

Ngolu yilo lwe-chip olunobuchule, indibaniselwano yendalo yokucoca i-quantum well gain kunye nokucoca i-microcavity ifezekisiwe, yabeka isiseko soyilo lokufezekisa imithombo ye-laser enemibala emibini. Ngokwezalathisi zokusebenza, le laser enemibala emibini ene-single-chip ifikelela ekukhanyeni okuphezulu, ukuguquguquka okuphezulu kunye nokukhupha okuchanekileyo kwe-coaxial beam. Ukukhanya kwayo kukwinqanaba eliphambili lamazwe ngamazwe kwicandelo langoku le-single-chip dual-color semiconductor lasers. Ngokwesicelo esisebenzayo, le mpumelelo kulindeleke ukuba iphucule ngempumelelo ukuchaneka kokufumanisa kunye nokukwazi ukulwa nokuphazamiseka kwe-multi-color lidar kwiindawo ezintsonkothileyo ngokusebenzisa ukukhanya kwayo okuphezulu kunye neempawu zemibala emibini. Kwicandelo le-optical frequency combs, ukuphuma kwayo okuzinzileyo kwe-dual-wavelength kunokubonelela ngenkxaso ebalulekileyo kwizicelo ezifana nokulinganisa okuchanekileyo kwe-spectral kunye nokubona okubonakalayo okuphezulu.