Ubume be-InGaAs photodetector

Ulwakhiwo lweInGaAs ifotodetector

Ukusukela ngeminyaka yoo-1980, abaphandi basekhaya nakwamanye amazwe baye bafunda ubume be-InGaAs photodetectors, ezahlulwe kakhulu zibe ziintlobo ezintathu. Ziyi-InGaAs zetsimbi-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), kunye ne-InGaAs Avalanche Photodetector (APD-PD). Kukho umahluko omkhulu kwinkqubo yokwenziwa kunye neendleko ze-InGaAs photodetectors ezinezakhiwo ezahlukeneyo, kwaye kukho umahluko omkhulu ekusebenzeni kwesixhobo.

I-InGaAs yentsimbi-semiconductor-metalifotodetector, eboniswe kuMzobo (a), sisakhiwo esikhethekileyo esisekelwe kwi-junction ye-Schottky. Ngowe-1992, uShi et al. kusetyenziswe uxinzelelo oluphantsi lwe-metal-organic vapor phase epitaxy technology (LP-MOVPE) ukukhulisa i-epitaxy layers kunye nokulungiswa kwe-InGaAs MSM photodetector, ene-responsiveness ephezulu ye-0.42 A/W kubude be-wavelength ye-1.3 μm kunye nobumnyama obungaphantsi kwe-5.6 pA / μm² e-1.5 V. Ngo-1996, zhang et al. kusetyenziswe isigaba segesi i-molecular beam epitaxy (GSMBE) ukukhulisa i-InAlAs-InGaAs-InP epitaxy layer. Uluhlu lwe-InAlAs lubonise iimpawu eziphezulu zokuxhathisa, kwaye iimeko zokukhula ziphuculwe ngomlinganiselo we-X-ray diffraction, ukwenzela ukuba ukungafani kwe-lattice phakathi kwe-InGaAs kunye ne-InAlAs iileyile ziphakathi koluhlu lwe-1 × 10⁻³. Oku kukhokelela ekusebenzeni okuphuculweyo kwesixhobo kunye nobumnyama obungaphantsi kwe-0.75 pA/μm² kwi-10 V kunye nokuphendula okwethutyana ngokukhawuleza ukuya kuthi ga kwi-16 ps kwi-5 V. Lilonke, i-MSM i-photodetector yesakhiwo ilula kwaye kulula ukuyidibanisa, ibonisa ubumnyama obuphantsi bangoku (pA). umyalelo), kodwa i-electrode yensimbi iya kunciphisa indawo yokukhanya esebenzayo yesixhobo, ngoko ke impendulo iphantsi kunezinye izakhiwo.

I-InGaAs PIN photodetector ifaka umaleko wangaphakathi phakathi kohlobo lwe-P-uhlobo loqhagamshelwano kunye nohlobo lwe-N, njengoko kubonisiwe kuMfanekiso (b), okwandisa ububanzi bommandla wokuncipha, ngaloo ndlela kugqama izibini ezininzi ze-electron-hole kunye nokwenza Ifotocurrent enkulu, ngoko inomsebenzi obalaseleyo we-electron conduction. Kwi-2007, A.Poloczek et al. wasebenzisa i-MBE ukukhulisa umaleko webuffer wobushushu obuphantsi ukuphucula uburhabaxa bomphezulu kwaye boyise ukungalingani kweletiyisi phakathi kwe-Si kunye ne-InP. I-MOCVD isetyenziselwe ukudibanisa i-InGaAs isakhiwo se-PIN kwi-substrate ye-InP, kunye nokuphendula kwesixhobo malunga ne-0.57A / W. Ngo-2011, i-Army Research Laboratory (ALR) yasebenzisa ii-PIN photodetectors ukufunda umfanekiso we-liDAR ukuze uhambe, uthintele umqobo/uthintele ukungqubana, kunye nokuchongwa okujoliswe kuko kuluhlu olufutshane lwezithuthi eziphantsi ezingaphathwanga, ezidityaniswe ne-chip ye-microwave amplifier yexabiso eliphantsi. iphucule kakhulu umlinganiselo wesignali ukuya kwingxolo ye-InGaAs PIN photodetector. Ngesi siseko, ngo-2012, i-ALR yasebenzisa lo mfanekiso we-liDAR kwiirobhothi, ezinoluhlu lokubhaqa olungaphezulu kwe-50 m kunye nesisombululo se-256 × 128.

Ii-InGaAsi-avalanche photodetectorluhlobo lwe-photodetector enenzuzo, isakhiwo esiboniswe kuMzobo (c). Isibini se-electron-hole sifumana amandla aneleyo phantsi kwesenzo sommandla wombane ngaphakathi kwendawo ephindwe kabini, ukuze ingqubane ne-athomu, ivelise izibini ezitsha ze-electron-hole, yenze i-avalanche effect, kwaye iphindaphinde abathwali abangalinganiyo kwizinto eziphathekayo. . Kwi-2013, uGeorge M wasebenzisa i-MBE ukukhulisa i-lattice ehambelana ne-InGaAs kunye ne-InAlAs alloys kwi-substrate ye-InP, esebenzisa utshintsho kwi-alloy composition, i-epitaxial layer thickness, kunye ne-doping ukuya kumandla othutha amandla okunyusa ukunyusa i-ionization ye-electroshock ngelixa unciphisa i-ionization yomngxuma. Kwinzuzo yesiphumo esilinganayo, i-APD ibonisa ingxolo ephantsi kunye nobumnyama obuphantsi. Kwi-2016, uSun Jianfeng et al. yakhe iseti ye-1570 nm laser esebenzayo yokucinga iqonga lovavanyo elisekelwe kwi-InGaAs ye-avalanche photodetector. Isekethe yangaphakathi yeIsixhobo sokufota seAPDifumene i-echoes kunye nemiqondiso yedijithali ephuma ngokuthe ngqo, isenza isixhobo siphelele. Iziphumo zovavanyo ziboniswa kwiFIG. (d) kunye (e). Umzobo (d) yifoto ebonakalayo yethagethi yomfanekiso, kwaye uMfanekiso (e) ngumfanekiso womgama omacala amathathu. Ingabonwa ngokucacileyo ukuba indawo yefestile yendawo c inomgama othile obunzulu kunye nommandla A kunye no-b. Iqonga liqonda ububanzi be-pulse ngaphantsi kwe-10 ns, amandla e-pulse eyodwa (1 ~ 3) mJ ehlengahlengiswayo, ifumana i-lens field Angle ye-2 °, ukuphindaphinda ukuphindaphinda kwe-1 kHz, umlinganiselo womsebenzi we-detector malunga ne-60%. Ndiyabulela kwi-APD ye-photocurrent yangaphakathi yenzuzo, impendulo ekhawulezayo, ubungakanani be-compact, ukuqina kunye nexabiso eliphantsi, i-APD photodetectors ingaba ngumyalelo wobukhulu obuphezulu kwizinga lokubona kune-PIN photodetectors, ngoko i-liDAR ekhoyo ngoku ilawulwa kakhulu yi-avalanche photodetectors.

Ngokubanzi, ngophuhliso olukhawulezayo lweteknoloji yokulungiselela i-InGaAs ekhaya nakwamanye amazwe, sinokusebenzisa ngobuchule i-MBE, i-MOCVD, i-LPE kunye nobunye ubuchwephesha ukulungiselela indawo enkulu ye-InGaAs epitaxial layer kwi-InP substrate. I-InGaAs photodetectors ibonisa ubumnyama obuphantsi bangoku kunye nokuphendula okuphezulu, obona bumnyama buphantsi bungaphantsi kwe-0.75 pA / μm², impendulo ephezulu ifikelela kwi-0.57 A / W, kwaye inempendulo ekhawulezayo yesikhashana (i-ps order). Uphuhliso lwexesha elizayo lwe-InGaAs photodetectors luya kugxila kule miba mibini ilandelayo: (1) InGaAs epitaxial layer ikhuliswe ngokuthe ngqo kwi-Si substrate. Okwangoku, uninzi lwezixhobo ze-microelectronic kwimarike zisekelwe kwi-Si, kwaye uphuhliso oludibeneyo olulandelayo lwe-InGaAs kunye ne-Si lusekelwe kwindlela eqhelekileyo. Ukusombulula iingxaki ezinje ngokungafaniyo kwelathisi kunye nokwandiswa kwe-thermal coefficient umahluko kubalulekile kuphononongo lwe-InGaAs/Si; (2) Itekhnoloji ye-1550 nm ye-wavelength ikhulile, kwaye i-wavelength eyandisiweyo (2.0 ~ 2.5) μm lukhokelo lophando lwexesha elizayo. Ngokunyuka kwe-In components, i-lattice mismatch phakathi kwe-InP substrate kunye ne-InGaAs epitaxial layer iya kukhokelela kwi-dislocation enzulu kunye neziphene, ngoko ke kuyimfuneko ukunyusa iiparamitha zenkqubo yesixhobo, ukunciphisa iziphene ze-lattice, kunye nokunciphisa isixhobo esimnyama sangoku.