Ulwakhiwo lwe-InGaAs photodetector

Ulwakhiwo lweIsixhobo sokubona iifoto se-InGaAs

Ukususela ngeminyaka yoo-1980, abaphandi basekhaya nakwamanye amazwe baye bafunda ulwakhiwo lwee-photodetectors ze-InGaAs, ezahlulwe ngokubanzi zibe ziintlobo ezintathu. Ziyi-InGaAs metal-Semiconductor-metal photodetector (MSM-PD), i-InGaAs PIN Photodetector (PIN-PD), kunye ne-InGaAs Avalanche Photodetector (APD-PD). Kukho umahluko omkhulu kwinkqubo yokwenziwa kunye neendleko zee-photodetectors ze-InGaAs ezinezakhiwo ezahlukeneyo, kwaye kukwakho umahluko omkhulu ekusebenzeni kwesixhobo.

I-InGaAs metal-semiconductor-metalisixhobo sokubona iifoto, eboniswe kuMfanekiso (a), sisakhiwo esikhethekileyo esisekelwe kwi-Schottky junction. Ngo-1992, uShi nabanye basebenzise iteknoloji ye-epitaxy ye-metal-organic vapor phase epitaxy (LP-MOVPE) yoxinzelelo oluphantsi ukukhulisa iileya ze-epitaxy kunye ne-InGaAs MSM photodetector elungisiweyo, ene-A responseness ephezulu ye-0.42 A/W kubude be-1.3 μm kunye nomsinga omnyama ongaphantsi kwe-5.6 pA/ μm² kwi-1.5 V. Ngo-1996, uZhang nabanye basebenzise i-gas phase molecular beam epitaxy (GSMBE) ukukhulisa i-InAlAs-InGaAs-InP epitaxy layer. Ileya ye-InAlAs ibonise iimpawu eziphezulu zokumelana, kwaye iimeko zokukhula zalungiswa ngokulinganisa i-X-ray diffraction, ukuze ukungafani kwe-lattice phakathi kweeleya ze-InGaAs kunye ne-InAlAs kube ngaphakathi koluhlu lwe-1×10⁻³. Oku kubangela ukusebenza kakuhle kwesixhobo kunye nomsinga omnyama ongaphantsi kwe-0.75 pA/μm² kwi-10 V kunye nempendulo ekhawulezayo yesikhashana ukuya kuthi ga kwi-16 ps kwi-5 V. Lilonke, i-MSM structure photodetector ilula kwaye kulula ukuyidibanisa, ibonisa umsinga omnyama ophantsi (ulandelelwano lwe-pA), kodwa i-electrode yesinyithi iya kunciphisa indawo yokufunxa ukukhanya esebenzayo yesixhobo, ngoko ke impendulo iphantsi kunezinye izakhiwo.

I-InGaAs PIN photodetector ifaka umaleko wangaphakathi phakathi komaleko woqhagamshelwano wohlobo lwe-P kunye nomaleko woqhagamshelwano wohlobo lwe-N, njengoko kubonisiwe kuMfanekiso (b), okwandisa ububanzi bendawo yokuncitshiswa, ngaloo ndlela ikhupha izibini ezininzi ze-electron-hole kwaye yenze i-photocurrent enkulu, ngoko ke inomsebenzi ogqwesileyo wokuqhuba i-electron. Ngo-2007, u-A.Poloczek et al. basebenzise i-MBE ukukhulisa umaleko we-buffer ophantsi ukuze kuphuculwe uburhabaxa bomphezulu kwaye boyise ukungalingani kwe-lattice phakathi kwe-Si kunye ne-InP. I-MOCVD yasetyenziselwa ukudibanisa isakhiwo se-InGaAs PIN kwi-substrate ye-InP, kwaye ukusabela kwesixhobo kwakumalunga ne-0.57A /W. Ngo-2011, i-Army Research Laboratory (ALR) isebenzise ii-PIN photodetectors ukuze ifunde i-liDAR imager yokuhamba, ukuphepha izithintelo/ukungqubana, kunye nokuchonga/ukuchonga iithagethi zomgama omfutshane kwizithuthi ezincinci zomhlaba ezingenabantu, ezidityaniswe ne-microwave amplifier chip ebiza kancinci ephucule kakhulu umlinganiselo wesignali-kwingxolo we-InGaAs PIN photodetector. Ngenxa yesi sizathu, ngo-2012, i-ALR isebenzise le mifanekiso ye-liDAR kwiirobhothi, enoluhlu lokufumanisa olungaphezulu kwe-50 m kunye nesisombululo se-256 × 128.

Ii-InGaAsisixhobo sokubona ifoto se-avalancheluhlobo lwe-photodetector ene-gain, isakhiwo sayo siboniswe kuMfanekiso (c). Isibini se-electron-hole sifumana amandla aneleyo phantsi kwesenzo sentsimi yombane ngaphakathi kwendawo ephindaphindayo, ukuze singqubane ne-athomu, sivelise izibini ezintsha ze-electron-hole, senze isiphumo se-avalanche, kwaye siphindaphinde abathwali abangengabo abalinganayo kwizinto. Ngo-2013, uGeorge M wasebenzisa i-MBE ukukhulisa i-lattice ehambelana ne-InGaAs kunye ne-InAlAs alloys kwi-substrate ye-InP, esebenzisa utshintsho kwi-alloy composition, ubukhulu be-epitaxial layer, kunye ne-doping kumandla othwala aguquliweyo ukuze kwandiswe i-electroshock ionization ngelixa kunciphisa i-hole ionization. Kwi-equivalent output signal gain, i-APD ibonisa ingxolo ephantsi kunye nomsinga omnyama ophantsi. Ngo-2016, uSun Jianfeng et al. bakhe iseti yeqonga lovavanyo lwe-1570 nm laser active imaging platform esekelwe kwi-InGaAs avalanche photodetector. Isekethe yangaphakathi yeIsixhobo sokubona ifoto se-APDIi-echoes ezifunyenweyo kunye nokukhupha ngokuthe ngqo imiqondiso yedijithali, okwenza isixhobo sonke sibe ncinci. Iziphumo zovavanyo ziboniswe kwiFIG. (d) kunye (e). Umfanekiso (d) yifoto ebonakalayo yethagethi yomfanekiso, kwaye uMfanekiso (e) ngumfanekiso womgama onemilinganiselo emithathu. Kuyabonakala ngokucacileyo ukuba indawo yefestile yendawo c inomgama othile wobunzulu kunye nendawo A kunye no-b. Iqonga lifikelela kububanzi be-pulse obungaphantsi kwe-10 ns, amandla e-pulse enye (1 ~ 3) mJ ahlengahlengiswayo, indawo yokufumana ilensi I-Angle ye-2°, i-repetition frequency ye-1 kHz, umlinganiselo womsebenzi we-detector omalunga ne-60%. Ngenxa yokufumana i-photocurrent yangaphakathi ye-APD, impendulo ekhawulezayo, ubungakanani obuncinci, ukuqina kunye neendleko eziphantsi, ii-photodetector ze-APD zinokuba ngumyalelo ophezulu kakhulu kwizinga lokufumanisa kunee-PIN photodetectors, ngoko ke i-liDAR yangoku ilawulwa kakhulu zii-avalanche photodetectors.

Lilonke, ngophuhliso olukhawulezileyo lwetekhnoloji yokulungiselela i-InGaAs ekhaya nakwamanye amazwe, singasebenzisa ngobuchule i-MBE, i-MOCVD, i-LPE kunye nezinye iitekhnoloji ukulungiselela umaleko we-epitaxial we-InGaAs okumgangatho ophezulu kwindawo enkulu kwi-substrate ye-InP. Ii-photodetectors ze-InGaAs zibonisa umbane omnyama ophantsi kunye nokuphendula okuphezulu, umbane omnyama ophantsi ungaphantsi kwe-0.75 pA/μm², ukuphendula okuphezulu kufikelela kwi-0.57 A/W, kwaye unempendulo ekhawulezayo yesikhashana (i-ps order). Uphuhliso lwexesha elizayo lwee-photodetectors ze-InGaAs luza kugxila kwezi zinto zimbini zilandelayo: (1) Umaleko we-epitaxial we-InGaAs ukhuliswa ngokuthe ngqo kwi-substrate ye-Si. Okwangoku, uninzi lwezixhobo ze-microelectronic kwimarike zisekwe kwi-Si, kwaye uphuhliso oludibeneyo olulandelayo lwe-InGaAs kunye ne-Si based luyindlela eqhelekileyo. Ukusombulula iingxaki ezifana nokungafani kwe-lattice kunye nomahluko wokwandiswa kobushushu kubalulekile ekufundeni i-InGaAs/Si; (2) Itekhnoloji ye-1550 nm wavelength sele ivuthiwe, kwaye ubude be-wavelength obubanzi (2.0 ~ 2.5) μm yindlela yophando yexesha elizayo. Ngokunyuka kwe-In components, ukungafani kwe-lattice phakathi kwe-InP substrate kunye ne-InGaAs epitaxial layer kuya kukhokelela ekuqhekekeni okukhulu kunye neziphene, ngoko ke kuyimfuneko ukwenza ngcono iiparameter zenkqubo yesixhobo, ukunciphisa iziphene ze-lattice, kunye nokunciphisa ubumnyama besixhobo.