Ubume be-InGaAs photodetector

Ulwakhiwo lweInGaAs ifotodetector

Ukusukela ngeminyaka yoo-1980, abaphandi basekhaya nakwamanye amazwe baye bafunda ubume be-InGaAs photodetectors, ezahlulwe kakhulu zibe ziintlobo ezintathu. Ziyi-InGaAs zetsimbi-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), kunye ne-InGaAs Avalanche Photodetector (APD-PD). Kukho umahluko omkhulu kwinkqubo yokwenziwa kunye neendleko ze-InGaAs photodetectors ezinezakhiwo ezahlukeneyo, kwaye kukho umahluko omkhulu ekusebenzeni kwesixhobo.

I-InGaAs yentsimbi-semiconductor-metalifotodetector, eboniswe kuMzobo (a), sisakhiwo esikhethekileyo esisekelwe kwi-junction ye-Schottky. Ngowe-1992, uShi et al. kusetyenziswe uxinzelelo oluphantsi lwe-metal-organic vapor phase epitaxy technology (LP-MOVPE) ukukhulisa i-epitaxy layers kunye nokulungiswa kwe-InGaAs ye-MSM photodetector, ene-responsiveness ephezulu ye-0.42 A / W kwi-wavelength ye-1.3 μm kunye nobumnyama obungaphantsi kwe-5.6 pA / μm² kwi-1.99 e-1. kusetyenziswe isigaba segesi i-molecular beam epitaxy (GSMBE) ukukhulisa i-InAlAs-InGaAs-InP epitaxy layer. Uluhlu lwe-InAlAs lubonise iimpawu eziphezulu zokuxhathisa, kwaye iimeko zokukhula ziphuculwe ngomlinganiselo we-X-ray diffraction, ukwenzela ukuba ukungafani kwe-lattice phakathi kwe-InGaAs kunye ne-InAlAs iileyile ziphakathi koluhlu lwe-1 × 10⁻³. Oku kubangela ukusebenza kakuhle kwesixhobo kunye nobumnyama obungaphantsi kwe-0.75 pA / μm² kwi-10 V kunye nokuphendula ngokukhawuleza okwethutyana ukuya kwi-16 ps kwi-5 V. Lilonke, i-photodetector yesakhiwo se-MSM ilula kwaye kulula ukuyidibanisa, ibonisa ubumnyama obuphantsi (umyalelo we-pA), kodwa i-electrode yensimbi iya kunciphisa indawo yokukhanya esebenzayo kunezinye izixhobo, ngoko ke impendulo iphantsi.

I-InGaAs PIN photodetector ifaka i-intrinsic layer phakathi kwe-P-type yoqhagamshelwano kunye ne-N-type contact layer, njengoko kuboniswe kuMzobo (b), okwandisa ububanzi bommandla wokunciphisa, ngaloo ndlela ikhupha izibini ezininzi ze-electron-hole kunye nokwenza i-photocurrent enkulu, ngoko inomsebenzi obalaseleyo we-electron conduction. Kwi-2007, A.Poloczek et al. wasebenzisa i-MBE ukukhulisa umaleko webuffer wobushushu obuphantsi ukuphucula uburhabaxa bomphezulu kwaye boyise ukungalingani kweletiyisi phakathi kwe-Si kunye ne-InP. I-MOCVD isetyenziselwe ukudibanisa i-InGaAs isakhiwo se-PIN kwi-substrate ye-InP, kunye nokuphendula kwesixhobo malunga ne-0.57A / W. Ngo-2011, i-Army Research Laboratory (ALR) isebenzise i-PIN photodetectors ukufunda umfanekiso we-liDAR ukuhamba, umqobo / ukuphepha ukungqubana, kunye nokuchongwa okujoliswe kuko okufutshane / ukuchongwa kweenqwelo ezincinci zomhlaba ezingenabantu, ezidityaniswe ne-chip ye-microwave amplifier yexabiso eliphantsi eliphucule kakhulu umlinganiselo we-signal-to-noise ye-PIN photodetector ye-InGaA. Ngesi siseko, ngo-2012, i-ALR yasebenzisa lo mfanekiso we-liDAR kwiirobhothi, ezinoluhlu lokubhaqa olungaphezulu kwe-50 m kunye nesisombululo se-256 × 128.

Ii-InGaAsi-avalanche photodetectorluhlobo lwe-photodetector enenzuzo, isakhiwo esiboniswe kuMzobo (c). Isibini se-electron-hole sifumana amandla aneleyo phantsi kwesenzo sentsimi yombane ngaphakathi kwendawo ephindwe kabini, ukwenzela ukuba ingqubane ne-athomu, ivelise izibini ezintsha ze-electron-hole, yenze i-avalanche effect, kwaye iphindaphinde abathwali abangekho ukulingana kwizinto eziphathekayo. Kwi-2013, uGeorge M wasebenzisa i-MBE ukukhulisa i-lattice ehambelana ne-InGaAs kunye ne-InAlAs alloys kwi-substrate ye-InP, esebenzisa utshintsho kwi-alloy composition, i-epitaxial layer thickness, kunye ne-doping ukuya kumandla othutha amandla okunyusa ukunyusa i-ionization ye-electroshock ngelixa unciphisa i-ionization yomngxuma. Kwinzuzo yesiphumo esilinganayo, i-APD ibonisa ingxolo ephantsi kunye nobumnyama obuphantsi. Kwi-2016, uSun Jianfeng et al. yakhe iseti ye-1570 nm laser esebenzayo yokucinga iqonga lovavanyo elisekelwe kwi-InGaAs ye-avalanche photodetector. Isekethe yangaphakathi yeIsixhobo sokufota seAPDifumene i-echoes kunye nemiqondiso yedijithali ephuma ngokuthe ngqo, isenza isixhobo siphelele. Iziphumo zovavanyo ziboniswa kwiFIG. (d) kunye (e). Umzobo (d) yifoto ebonakalayo yethagethi yomfanekiso, kwaye uMfanekiso (e) ngumfanekiso womgama omacala amathathu. Ingabonwa ngokucacileyo ukuba indawo yefestile yendawo c inomgama othile obunzulu kunye nommandla A kunye no-b. Iqonga liqonda ububanzi be-pulse ngaphantsi kwe-10 ns, amandla e-pulse eyodwa (1 ~ 3) mJ ehlengahlengiswayo, ifumana i-lens field Angle ye-2 °, ukuphindaphinda ukuphindaphinda kwe-1 kHz, umlinganiselo womsebenzi we-detector malunga ne-60%. Ndiyabulela kwi-APD ye-photocurrent yangaphakathi yenzuzo, impendulo ekhawulezayo, ubungakanani be-compact, ukuqina kunye nexabiso eliphantsi, i-APD photodetectors ingaba ngumyalelo wobukhulu obuphezulu kwizinga lokubona kune-PIN photodetectors, ngoko i-liDAR ekhoyo ngoku ilawulwa kakhulu yi-avalanche photodetectors.

Ngokubanzi, ngophuhliso olukhawulezayo lweteknoloji yokulungiselela i-InGaAs ekhaya nakwamanye amazwe, sinokusebenzisa ngobuchule i-MBE, i-MOCVD, i-LPE kunye nobunye ubuchwephesha ukulungiselela indawo enkulu ye-InGaAs epitaxial layer kwi-InP substrate. I-InGaAs photodetectors ibonisa ubumnyama obuphantsi bangoku kunye nokuphendula okuphezulu, obona bumnyama buphantsi bungaphantsi kwe-0.75 pA / μm², impendulo ephezulu ifikelela kwi-0.57 A / W, kwaye inempendulo ekhawulezayo yesikhashana (i-ps order). Uphuhliso lwexesha elizayo lwe-InGaAs photodetectors luya kugxila kule miba mibini ilandelayo: (1) InGaAs epitaxial layer ikhuliswe ngokuthe ngqo kwi-Si substrate. Okwangoku, uninzi lwezixhobo ze-microelectronic kwimarike zisekelwe kwi-Si, kwaye uphuhliso oludibeneyo olulandelayo lwe-InGaAs kunye ne-Si lusekelwe kwindlela eqhelekileyo. Ukusombulula iingxaki ezinje ngokungafaniyo kwelathisi kunye nokwandiswa kwe-thermal coefficient umahluko kubalulekile kuphononongo lwe-InGaAs/Si; (2) Itekhnoloji ye-1550 nm ye-wavelength ikhulile, kwaye i-wavelength eyandisiweyo (2.0 ~ 2.5) μm lukhokelo lophando lwexesha elizayo. Ngokunyuka kwe-In components, i-lattice mismatch phakathi kwe-InP substrate kunye ne-InGaAs epitaxial layer iya kukhokelela kwi-dislocation enzulu kunye neziphene, ngoko ke kuyimfuneko ukunyusa iiparamitha zenkqubo yesixhobo, ukunciphisa iziphene ze-lattice, kunye nokunciphisa isixhobo esimnyama sangoku.