Isikhangeli seefoto ezinefoto enyebaphule umqobo osebenzayo wama-80%.
Ifoton enyeifotodetectorzisetyenziswa ngokubanzi kwiinkalo ze-quantum photonics kunye ne-single-photon imaging ngenxa yeenzuzo zabo ezidibeneyo kunye neendleko eziphantsi, kodwa zijongene nezi bhotile zobuchwepheshe zilandelayo.
Unyino lwangoku lobugcisa
I-1.CMOS kunye ne-spad ye-thin-junction: Nangona banokuhlanganiswa okuphezulu kunye ne-jitter yexesha eliphantsi, i-absorption layer incinci (i-micrometers embalwa), kwaye i-PDE inqunyelwe kummandla osondeleyo we-infrared, kunye ne-32% kuphela kwi-850 nm.
2. Thick-junction SPAD: Ibonisa umaleko wokufunxa amashumi eemicrometers. Iimveliso zorhwebo zine-PDE emalunga ne-70% kwi-780 nm, kodwa ukunqumla i-80% ngumceli mngeni omkhulu.
3. Funda imida yesekethe: Thick-junction SPAD ifuna i-overbias voltage engaphezu kwe-30V ukuqinisekisa ukubakho kokuphakama kwe-avalanche. Nangona i-voltage yokucima i-68V kwiisekethe zendabuko, i-PDE inokunyuswa kuphela kwi-75.1%.
Isisombululo
Ukwandisa ubume be-semiconductor ye-SPAD. Uyilo olukhanyiswe ngasemva: Iifotoni zezehlo zibola ngokukhawuleza kwisilicon. Isakhiwo esikhanyisiweyo ngasemva siqinisekisa ukuba uninzi lweefotoni zifakwe kwi-absorption layer, kwaye ii-electron eziveliswayo zijojowe kwindawo ye-avalanche. Ngenxa yokuba izinga le-ionization yee-electron kwi-silicon liphezulu kunelo lemingxunya, inaliti ye-electron ibonelela ngamathuba aphezulu e-avalanche. Ummandla we-avalanche yembuyekezo ye-Doping: Ngokusebenzisa inkqubo eqhubekayo yokusasazwa kwe-boron kunye ne-phosphorus, i-doping enzulu ibuyekezwe ukuze igxininise intsimi yombane kummandla onzulu kunye neziphene ezimbalwa zekristale, ngokufanelekileyo ukunciphisa ingxolo efana ne-DCR.
2. Isekethe yokufunda esebenza kakuhle. I-50V i-amplitude ephezulu yokucima Ukutshintsha ngokukhawuleza kwemeko; Ukusebenza kwe-Multimodal: Ngokudibanisa i-FPGA yokulawula i-QUENCHING kunye ne-RESET izibonakaliso, ukutshintsha okuguquguqukayo phakathi kokusebenza kwamahhala (i-signal trigger), i-gating (i-GATE drive yangaphandle), kunye neendlela ezixubileyo ziphunyeziwe.
3. Ukulungiswa kwesixhobo kunye nokupakishwa. Inkqubo ye-SPAD wafer yamkelwa, kunye nephakheji yebhabhathane. I-SPAD ibophelelwe kwi-substrate ye-AlN ye-carrier kwaye ifakwe ngokuthe nkqo kwi-thermoelectric cooler (TEC), kwaye ulawulo lobushushu luphunyezwa nge-thermistor. I-Multimode optical fibers ihambelana ngokuchanekileyo neziko le-SPAD ukuphumeza ukudibanisa okusebenzayo.
4. Ulungelelwaniso lokusebenza. Ukulinganisa kwenziwa kusetyenziswa i-785 nm picosecond pulsed laser diode (100 kHz) kunye ne-time-digital converter (TDC, 10 ps isisombululo).
Isishwankathelo
Ngokulungisa isakhiwo se-SPAD (i-junction engqingqwa, i-back-illuminated, imbuyekezo ye-doping) kunye nokuqulunqa i-50 V yesekethe yokucima, olu pho nonongo luqhube ngempumelelo i-PDE ye-silicon-based single-photon detector ukuya kubude obutsha be-84.4%. Xa kuthelekiswa neemveliso zorhwebo, ukusebenza kwayo okubanzi kuye kwaphuculwa kakhulu, ukubonelela ngezisombululo ezisebenzayo kwizicelo ezifana nonxibelelwano lwe-quantum, i-computing ye-quantum, kunye ne-imaging high-sensitivity efuna ukusebenza kakuhle kunye nokusebenza okuguquguqukayo. Lo msebenzi ubeke isiseko esiluqilima sophuhliso olongezelelweyo lwe-silicon-basedumtshina onefotoni enyeiteknoloji.
Ixesha lokuposa: Oct-28-2025