Isixhobo sokubona iifoto esinye siphumelele kwi-80% yengxaki yokusebenza kakuhle

Isixhobo sokubona ifoto esinefotoni enyebaphumelele kwimiqobo yokusebenza kakuhle eyi-80%

I-photon enyeisixhobo sokubona iifotoZisetyenziswa kakhulu kwiinkalo ze-quantum photonics kunye ne-single-photon imaging ngenxa yeenzuzo zazo ezincinci nezingabizi kakhulu, kodwa zijongene nezi ngxaki zobugcisa zilandelayo.

Imida yobugcisa yangoku

1. I-CMOS kunye ne-thin-junction SPAD: Nangona zine-integration ephezulu kunye ne-timing jitter ephantsi, umaleko wokufunxa ubhityile (ii-micrometer ezimbalwa), kwaye i-PDE ilinganiselwe kummandla we-infrared okufutshane, malunga ne-32% kuphela kwi-850 nm.

2. I-Thick-junction SPAD: Inomaleko wokufunxa amashumi ee-micrometer ubukhulu. Iimveliso zorhwebo zine-PDE emalunga ne-70% kwi-780 nm, kodwa ukugqitha kwi-80% kunzima kakhulu.

3. Funda ngokuvakalayo imida yesekethe: I-SPAD edibeneyo ifuna i-voltage engaphezulu kwe-30V ukuqinisekisa ukuba kukho amathuba aphezulu okuqhekeka kwekhephu. Nokuba i-voltage yokucima ye-68V kwiisekethe zemveli, i-PDE inokwandiswa kuphela ukuya kwi-75.1%.

Isisombululo

Lungiselela ulwakhiwo lwe-semiconductor ye-SPAD. Uyilo olukhanyisiweyo ngasemva: Iiphotoni zesiganeko zibola ngokukhawuleza kwi-silicon. Ulwakhiwo olukhanyisiweyo ngasemva luqinisekisa ukuba uninzi lweephotoni lufunxwa kumaleko wokufunxa, kwaye ii-electron ezivelisiweyo zifakwa kummandla we-avalanche. Ngenxa yokuba izinga le-ionization yee-electron kwi-silicon liphezulu kuneleemingxuma, i-electron injection inika amathuba aphezulu e-avalanche. I-doping compensation avalanche region: Ngokusebenzisa inkqubo eqhubekayo yokusasazwa kwe-boron kunye ne-phosphorus, i-shallow doping ihlawulwa ukuze igxile intsimi yombane kummandla onzulu oneziphene ezimbalwa zekristale, kunciphisa ingxolo efana ne-DCR.

2. Isekethe yokufunda esebenza kakhulu. Ukucima i-amplitude ephezulu ye-50V Utshintsho olukhawulezayo lwemeko; Ukusebenza kwe-multimodal: Ngokudibanisa imiqondiso ye-FPGA QUENCHING kunye ne-RESET, utshintsho oluguquguqukayo phakathi kokusebenza ngokukhululekileyo (isiqalisi sesiginali), i-gating (i-GATE drive yangaphandle), kunye neendlela ze-hybrid ziyafezekiswa.

3. Ukulungiswa kwesixhobo kunye nokupakishwa kwaso. Inkqubo ye-SPAD wafer iyasetyenziswa, kunye nephakheji yebhabhathane. I-SPAD ibotshelelwe kwi-substrate ye-AlN carrier kwaye ifakwe ngokuthe nkqo kwi-thermoelectric cooler (TEC), kwaye ulawulo lobushushu lufezekiswa nge-thermistor. Iifayibha ze-optical ze-Multimode zilungelelaniswe ngokuchanekileyo neziko le-SPAD ukuze kufezekiswe ukuhlanganiswa okusebenzayo.

4. Ukulinganiswa kokusebenza. Ukulinganiswa kwenziwe kusetyenziswa i-785 nm picosecond pulsed laser diode (100 kHz) kunye ne-time-digital converter (TDC, 10 ps resolution).

Isishwankathelo

Ngokwenza ngcono isakhiwo se-SPAD (i-density junction, i-back-lightened, i-doping compensation) kunye nokuvelisa i-50 V quenching circuit, olu phononongo luphumelele ekunyuseni i-PDE ye-silicon-based single-photon detector ukuya kubude obutsha be-84.4%. Xa kuthelekiswa neemveliso zorhwebo, ukusebenza kwayo okubanzi kuye kwaphuculwa kakhulu, kubonelela ngezisombululo ezisebenzayo kwizicelo ezinje ngonxibelelwano lwe-quantum, i-quantum computing, kunye ne-high-sensitivity imaging ezifuna ukusebenza kakuhle kakhulu kunye nokusebenza okuguquguqukayo. Lo msebenzi ubeke isiseko esiqinileyo sophuhliso oluqhubekayo lwe-silicon-based.isixhobo sokubona ifotoni enyeiteknoloji.