Into esebenzayo ye-silicon photonics

Into esebenzayo ye-silicon photonics

Izinto ezisebenzayo ze-photonics zibhekisa ngokukodwa kwintsebenziswano eguquguqukayo eyenziwe ngabom phakathi kokukhanya kunye nezinto. Icandelo eliqhelekileyo elisebenzayo le-photonics yi-optical modulator. Zonke izinto ezikhoyo ezisekelwe kwi-siliconiimodulators ezibonakalayozisekelwe kwisiphumo sokuthwala i-plasma free. Ukutshintsha inani lee-electron ezikhululekileyo kunye nemingxunya kwi-silicon material ngokusebenzisa i-doping, iindlela zombane okanye ze-optical kunokutshintsha i-complex refractive index yayo, inkqubo eboniswe kwi-equations (1,2) efunyenwe ngokufaka idatha evela kuSoref noBennett kubude be-1550 nanometers. Xa kuthelekiswa nee-electron, imingxunya ibangela inxalenye enkulu yotshintsho lwe-refractive index yokwenyani kunye neyokucingelwa, oko kukuthi, zinokuvelisa utshintsho olukhulu lwesigaba kutshintsho oluthile lokulahleka, ngoko ke kwiIimodulators zeMach-Zehnderkunye nee-ring modulators, kudla ngokukhethwa ukusebenzisa imingxunya ukwenzaiimodulators zesigaba.

Iintlobo ngeentloboimodyuli yesilicon (Si)Iintlobo ziboniswe kuMfanekiso 10A. Kwimodulator ye-carrier injection, ukukhanya kufumaneka kwi-silicon yangaphakathi ngaphakathi kwe-pin junction ebanzi kakhulu, kwaye ii-electron kunye nemingxuma ziyafakwa. Nangona kunjalo, ezi modulator zihamba kancinci, zihlala zine-bandwidth ye-500 MHz, kuba ii-electron kunye nemingxuma ekhululekileyo zithatha ixesha elide ukuphinda zihlangane emva kokufakwa. Ke ngoko, olu lwakhiwo luhlala lusetyenziswa njenge-variable optical attenuator (VOA) endaweni ye-modulator. Kwimodulator ye-carrier depletion, inxalenye yokukhanya ifumaneka kwi-pn junction emxinwa, kwaye ububanzi be-depletion ye-pn junction butshintshwa yintsimi yombane esetyenzisiweyo. Le modulator inokusebenza ngesantya esingaphezulu kwe-50Gb/s, kodwa inokulahleka okuphezulu kokufakwa kwemvelaphi. I-vpil eqhelekileyo yi-2 V-cm. Imodulator ye-metal oxide semiconductor (MOS) (ngokwenene i-semiconductor-oxide-semiconductor) iqulethe umaleko we-oxide omncinci kwi-pn junction. Ivumela ukuqokelelwa kwe-carrier kunye nokuncipha kwe-carrier, ivumela i-VπL encinci malunga ne-0.2 V-cm, kodwa ineengxaki zokulahleka okuphezulu kwe-optical kunye ne-capacitance ephezulu ngobude beyunithi nganye. Ukongeza, kukho ii-modulators ze-SiGe zokungenisa umbane ezisekwe kwi-SiGe (silicon Germanium alloy) band edge movement. Ukongeza, kukho ii-modulators ze-graphene ezixhomekeke kwi-graphene ukutshintsha phakathi kweentsimbi ezifunxayo kunye nee-insulators ezicacileyo. Ezi zibonisa ukwahluka kwezicelo zeendlela ezahlukeneyo zokufezekisa i-high-speed, low-loss optical signal modulation.

Umfanekiso 10: (A) Umzobo onqamlezileyo weendlela ezahlukeneyo zoyilo lwe-silicon-based optical modulator kunye (B) nomzobo onqamlezileyo weendlela zoyilo lwe-optical detector.

Kuboniswe izixhobo ezininzi zokubona ukukhanya ezisekelwe kwi-silicon kuMfanekiso 10B. Izinto ezifunxayo yi-germanium (Ge). I-Ge iyakwazi ukufunxa ukukhanya kwiiwavelengths ukuya kuthi ga kwi-1.6 microns. Kwicala lasekhohlo kukho isakhiwo se-pin esiphumelele kakhulu kwezorhwebo namhlanje. Senziwe yi-silicon efakwe uhlobo lwe-P apho i-Ge ikhula khona. I-Ge kunye ne-Si zinokungalingani kwe-lattice ye-4%, kwaye ukuze kuncitshiswe ukusasazeka, umaleko omncinci we-SiGe uqala ukhuliswe njengomaleko we-buffer. Ukufakwa kwe-N-type kwenziwa phezulu komaleko we-Ge. I-photodiode yesinyithi-semiconductor-metal (MSM) iboniswa embindini, kwaye i-APD (isixhobo sokubona ifoto se-avalanche) iboniswe ngasekunene. Ummandla we-avalanche kwi-APD ukwiSi, eneempawu zengxolo ephantsi xa ithelekiswa nommandla we-avalanche kwizinto ze-elemental zeQela III-V.

Okwangoku, akukho zisombululo zineengenelo ezicacileyo zokudibanisa i-optical gain kunye ne-silicon photonics. Umfanekiso 11 ubonisa iindlela ezininzi ezinokwenzeka ezicwangciswe ngokwenqanaba le-assembly. Ngasekhohlo kakhulu kukho i-monolithic integrations equka ukusetyenziswa kwe-epitaxially growned germanium (Ge) njenge-optical gain material, i-erbium-doped (Er) glass waveguides (ezifana ne-Al2O3, efuna i-optical pumping), kunye ne-epitaxially growned gallium arsenide (GaAs) quantum dots. Ikholamu elandelayo yi-wafer to wafer assembly, equka i-oxide kunye ne-organic bonding kummandla we-III-V group gain. Ikholamu elandelayo yi-chip-to-wafer assembly, equka ukufaka i-III-V group chip kwi-cavity ye-silicon wafer uze emva koko usebenze nge-waveguide structure. Inzuzo yale ndlela yokuqala yeekholamu ezintathu kukuba isixhobo sinokuvavanywa ngokupheleleyo ngaphakathi kwe-wafer ngaphambi kokusika. Ikholamu ekunene kakhulu yi-chip-to-chip assembly, equka ukudibanisa ngokuthe ngqo kwee-silicon chips kwi-III-V group chips, kunye nokudibanisa ngelensi kunye nee-grating couplers. Umkhwa wokusetyenziswa kwezicelo zorhwebo usuka kwicala lasekunene uye kwicala lasekhohlo letshathi ukuya kwizisombululo ezidityanisiweyo nezidityanisiweyo ngakumbi.

Umfanekiso 11: Indlela i-optical gain edityaniswe ngayo kwi-silicon-based photonics. Njengoko usuka ekhohlo uye ekunene, indawo yokufaka imveliso ibuyela umva kancinci kancinci kwinkqubo.