Silicon photonics esebenzayo element

Silicon photonics esebenzayo element

Amalungu ePhotonics asebenzayo abhekisa ngokuthe ngqo kunxibelelwano oluyilwe ngabom oluguquguqukayo phakathi kokukhanya kunye nento. Icandelo eliqhelekileyo elisebenzayo lefotonics yimodyuli ye-optical. Yonke into yangoku isekelwe kwi-siliconiimodyuli zamehlozisekelwe kwi-plasma ye-carrier effect. Ukutshintsha inani lee-electron zamahhala kunye nemingxuma kwizinto ze-silicon ngokusebenzisa i-doping, iindlela zombane okanye ze-optical zingatshintsha i-complex refractive index, inkqubo eboniswe kwi-equations (1,2) efunyenwe ngokufaka idatha esuka kwi-Soref kunye ne-Bennett kwi-wavelength ye-1550 nanometers. . Xa kuthelekiswa nee-electron, imingxunya ibangela umlinganiselo omkhulu wotshintsho lokwenyani kunye nolucingelwayo lwesalathiso se-refractive, oko kukuthi, banokuvelisa utshintsho olukhulu lwenqanaba lotshintsho olunikiweyo lwelahleko.Iimodyuli zeMach-Zehnderkunye neemodyuli zeringi, ngokuqhelekileyo kukhethwa ukusebenzisa imingxuma ukwenzaiimodyuli zesigaba.

Ezahlukeneyoi-silicon (Si) imodyuliiintlobo ziboniswe kuMfanekiso 10A. Kwimodyuli yokuthwala inaliti, ukukhanya kukwi-silicon yangaphakathi ngaphakathi kwendawo yokuhlangana ebanzi kakhulu, kwaye ii-electron kunye nemingxuma ziyatofwa. Nangona kunjalo, iimodyuli ezinjalo ziyacotha, zihlala zine-bandwidth ye-500 MHz, kuba ii-electron zasimahla kunye nemingxuma zithatha ixesha elide ukuphinda zihlangane emva kokutofa. Ngoko ke, esi sakhiwo sisoloko sisetyenziswa njenge-variable optical attenuator (VOA) kunokuba i-modulator. Kwi-modulator yokunciphisa i-carrier carrier, inxalenye yokukhanya ifumaneka kwi-pn junction encinci, kwaye ububanzi bokunciphisa i-pn junction butshintshwa yintsimi yombane esetyenzisiweyo. Le moduli inokusebenza ngesantya esingaphezulu kwe-50Gb/s, kodwa inolahleko oluphezulu lokufakela ngasemva. I-vpil eqhelekileyo yi-2 V-cm. I-metal oxide semiconductor (MOS) (eneneni i-semiconductor-oxide-semiconductor) imodyuli iqulethe umaleko obhityileyo we-oksidi kumdibaniso we-pn. Ivumela ukuqokelelwa kwe-carrier kunye nokunciphisa umthwali, ukuvumela i-VπL encinci malunga ne-0.2 V-cm, kodwa ine-disadvantage yokulahleka okuphezulu kwe-optical kunye ne-capacitance ephezulu ngobude beyunithi. Ukongeza, kukho iimodyuli zokufunxa zombane ze-SiGe ezisekwe kwi-SiGe (i-silicon Germanium alloy) i-band edge movement. Ukongeza, kukho iimodyuli zegraphene ezixhomekeke kwigraphene ukutshintsha phakathi kwesinyithi esifunxayo kunye nezithinteli ezibonisa elubala. Oku kubonisa ukuhlukahluka kokusetyenziswa kweendlela ezahlukeneyo zokufezekisa i-speed-speed-speed, ilahleko ephantsi yokuguqulwa kwesignali ye-optical.

Umzobo 10: (A) Umzobo we-cross-sectional we-silicon-based optical modulator designs kunye (B) ne-cross-sectional diagram ye-optical detector designs.

Uninzi lwezixhobo zokukhanya ezisekelwe kwisilicon ziboniswa kuMfanekiso 10B. Izinto ezifunxayo yigermanium (Ge). I-Ge iyakwazi ukufunxa ukukhanya kwi-wavelengths ukuya kutsho malunga ne-1.6 microns. Iboniswe ekhohlo sesona sakhiwo sesikhonkwane siphumelele urhwebo namhlanje. Yenziwe nge-silicon edityanisiweyo yodidi lwe-P apho i-Ge ikhula khona. I-Ge kunye ne-Si zine-4% ye-lattice engafaniyo, kwaye ukuze kuncitshiswe ukuchithwa, umaleko obhityileyo we-SiGe ukhuliswa kuqala njengomaleko we-buffer. N-uhlobo doping lwenziwa phezu Ge umaleko. I-metal-semiconductor-metal (MSM) photodiode iboniswe embindini, kunye ne-APD (iAvalanche Photodetector) iboniswe ekunene. Ummandla we-avalanche kwi-APD ibekwe kwi-Si, eneempawu eziphantsi zengxolo xa kuthelekiswa nommandla we-avalanche kwiQela III-V izinto eziphambili.

Okwangoku, akukho zisombululo ezinezibonelelo ezicacileyo zokudibanisa inzuzo ye-optical kunye ne-silicon photonics. Umzobo we-11 ubonisa iinketho ezininzi ezinokwenzeka eziququzelelwe kwinqanaba lendibano. Ekunene ngasekhohlo kukho ukuhlanganiswa kwe-monolithic okubandakanya ukusetyenziswa kwe-epitaxially grow germanium (Ge) njengesixhobo sokufumana izinto ezibonakalayo, i-erbium-doped (Er) i-glass waveguides (efana ne-Al2O3, efuna ukupompa okubonakalayo), kunye ne-gallium arsenide ekhulile epitaxially (GaAs). ) amachaphaza e-quantum. Ikholamu elandelayo yi-wafer ukuya kwi-wafer assembly, ebandakanya i-oxide kunye ne-organic bonding kwi-III-V iqela lokuzuza kwingingqi. Ikholamu elandelayo yindibano ye-chip-to-wafer, ebandakanya ukubethelela i-III-V yeqela letshiphu kumngxunya we-silicon wafer emva koko ukwenza ubume be-waveguide. Inzuzo yale ndlela yokuqala yekholamu ezintathu kukuba isixhobo sinokuvavanywa ngokupheleleyo ngaphakathi kwe-wafer ngaphambi kokusika. Ikholamu ekunene yindibano ye-chip-to-chip, kubandakanya ukudityaniswa ngokuthe ngqo kweetshiphusi ze-silicon ukuya kwiitshiphusi zeqela le-III-V, kunye nokudibanisa nge-lens kunye ne-coupers ye-grating. Umkhwa obhekiselele kwizicelo zorhwebo uhamba ukusuka ngasekunene ukuya kwicala lasekhohlo letshathi ukuya kwizisombululo ezidibeneyo nezidibeneyo.

Umzobo 11: Indlela inzuzo ye-optical idibaniswe ngayo kwi-silicon-based photonics. Njengoko usuka ekhohlo ukuya ekunene, indawo yokufaka yokwenziwa ngokuthe ngcembe ibuyela umva kwinkqubo.