Kwi-optoelectronics esekwe kwi-silicon, ii-silicon photodetectors (i-Si photodetector)

Kwi-optoelectronics esekwe kwi-silicon, ii-silicon photodetectors

Izixhobo zokufotaguqula imiqondiso yokukhanya ibe yimiqondiso yombane, kwaye njengoko amazinga okudluliselwa kwedatha eqhubeka ephucuka, ii-photodetectors ezikhawulezayo ezidityaniswe namaqonga e-optoelectronics asekelwe kwi-silicon ziye zaba ngundoqo kumaziko edatha esizukulwana esilandelayo kunye neenethiwekhi zonxibelelwano. Eli nqaku liza kubonelela ngesishwankathelo see-photodetectors ezikhawulezayo eziphezulu, kugxininiswa kwi-germanium esekelwe kwi-silicon (i-Ge okanye i-Si photodetector)izixhobo zokubona iifoto zesiliconkwitekhnoloji ye-optoelectronics edibeneyo.

I-Germanium yinto ekhangayo yokufumanisa ukukhanya okukufutshane ne-infrared kumaqonga e-silicon kuba iyahambelana neenkqubo ze-CMOS kwaye inomoya oqinileyo kakhulu kwiiwavelengths zonxibelelwano. Ulwakhiwo lwe-photodetector oluqhelekileyo lwe-Ge/Si yi-pin diode, apho i-germanium yangaphakathi ibekwe phakathi kweendawo ze-P-type kunye ne-N-type.

Ulwakhiwo lwesixhobo Umfanekiso 1 ubonisa iphini eqhelekileyo ethe nkqo uGe okanyeIsixhobo sokubona ifotoisakhiwo:

Iimpawu eziphambili ziquka: umaleko wokufunxa i-germanium okhuliswe kwi-silicon substrate; Isetyenziselwa ukuqokelela ii-p kunye nee-n contacts ze-charge carriers; i-Waveguide coupling ukuze kufunxwe ukukhanya ngokufanelekileyo.

Ukukhula kwe-Epitaxial: Ukukhulisa i-germanium esemgangathweni ophezulu kwi-silicon kunzima ngenxa yokungalingani kwe-lattice ye-4.2% phakathi kwezinto ezimbini. Inkqubo yokukhula enamanyathelo amabini idla ngokusetyenziswa: ukukhula kobushushu obuphantsi (300-400°C) kwe-buffer layer kunye nokufakwa kwe-germanium kubushushu obuphezulu (ngaphezu kwama-600°C). Le ndlela inceda ukulawula ukusasazeka kwe-threading okubangelwa kukungafani kwe-lattice. Ukufakelwa kwe-annealing emva kokukhula kwi-800-900°C kunciphisa ngakumbi uxinano lwe-threading dislocation ukuya malunga ne-10^7 cm^-2. Iimpawu zokusebenza: I-Ge/Si PIN photodetector ephucukileyo kakhulu inokufezekisa: ukuphendula, > 0.8A /W kwi-1550 nm; I-Bandwidth,>60 GHz; Umbane omnyama, <1 μA kwi--1 V bias.

Ukuhlanganiswa namaqonga e-optoelectronics asekelwe kwi-silicon

Ukuhlanganiswa kweizixhobo zokubona iifoto ezikhawulezayoNgeeplatifomu ze-optoelectronics ezisekelwe kwi-silicon, zivumela ii-transceivers ze-optical eziphambili kunye nee-interconnects. Iindlela ezimbini eziphambili zokudibanisa zezi zilandelayo: Ukuhlanganiswa kwe-front-end (FEOL), apho i-photodetector kunye ne-transistor zenziwa ngaxeshanye kwi-substrate ye-silicon evumela ukucutshungulwa kobushushu obuphezulu, kodwa kuthatha indawo ye-chip. Ukuhlanganiswa kwe-back-end (BEOL). Ii-photodetector zenziwa phezu kwesinyithi ukuze kuthintelwe ukuphazamiseka kwi-CMOS, kodwa zikhawulelwe kumaqondo obushushu aphantsi okucubungula.

Umfanekiso 2: Ukusabela kunye ne-bandwidth ye-photodetector ye-Ge/Si ekhawulezayo

Isicelo seziko ledatha

Ii-photodetectors ezikhawulezayo ziyinxalenye ebalulekileyo kwisizukulwana esilandelayo sokunxibelelana kweziko ledatha. Ii-application eziphambili ziquka: ii-transceivers ezibonakalayo: 100G, 400G kunye namazinga aphezulu, kusetyenziswa i-PAM-4 modulation; Aisixhobo sokubona ifoto esinebhendi ephezulu(>50 GHz) iyafuneka.

Isekethe edibeneyo ye-optoelectronic esekelwe kwi-silicon: ukuhlanganiswa kwe-monolithic ye-detector kunye ne-modulator kunye nezinye izinto; Injini ye-optical encinci, esebenza kakhulu.

Uyilo olusasazwe: unxibelelwano olubonakalayo phakathi kwekhompyutha esasazwe, indawo yokugcina, kunye nendawo yokugcina; Ukuqhuba imfuno yezixhobo zokubona iifoto ezisebenzisa amandla kakuhle nezisebenzisa i-bandwidth ephezulu.

Imbono yexesha elizayo

Ikamva lee-optoelectronic high-speed photodetectors ezidityanisiweyo liza kubonisa ezi ndlela zilandelayo:

Amanani aphezulu edatha: Ukuqhuba uphuhliso lwee-transceivers ze-800G kunye ne-1.6T; Kufuneka ii-Photodetectors ezine-bandwidths ezingaphezu kwe-100 GHz.

Ukuhlanganiswa okuphuculweyo: Ukuhlanganiswa kwe-single chip yezinto ze-III-V kunye ne-silicon; Itekhnoloji yokudibanisa ye-3D ephucukileyo.

Izixhobo ezintsha: Ukuhlola izixhobo ezinemilinganiselo emibini (ezifana ne-graphene) ukuze kufunyanwe ukukhanya okukhawulezayo; I-alloy entsha yeQela IV yokufikelela kubude obude be-wavelength.

Izicelo ezisandula kuvela: I-LiDAR kunye nezinye izicelo zokuva ziqhuba uphuhliso lwe-APD; Izicelo ze-photon ze-microwave ezifuna ii-photodetectors ezihambelanayo eziphezulu.

Iifoto-detectors ezikhawulezayo, ingakumbi iifoto-detectors zeGe okanye zeSi, ziye zaba ngumqhubi ophambili we-optoelectronics ezisekelwe kwisilicon kunye nonxibelelwano lwe-optical lwesizukulwana esilandelayo. Ukuqhubela phambili okuqhubekayo kwizixhobo, uyilo lwesixhobo, kunye nobuchwepheshe bokudibanisa kubalulekile ukuhlangabezana neemfuno ezikhulayo ze-bandwidth zamaziko edatha kunye neenethiwekhi zonxibelelwano zexesha elizayo. Njengoko intsimi iqhubeka nokukhula, sinokulindela ukubona iifoto-detectors ezine-bandwidth ephezulu, ingxolo ephantsi, kunye nokuhlanganiswa okungenamthungo kunye neesekethe ze-elektroniki kunye ne-photonic.