Kwi-silicon-based optoelectronics, ii-silicon photodetectors (Si photodetector)

Kwi-silicon-based optoelectronics, i-silicon photodetectors

Iifotodetectorsguqula izibonakaliso zokukhanya kwizibonakaliso zombane, kwaye njengoko amazinga okudluliselwa kwedatha eqhubeka nokuphucula, i-photodetectors ye-high-speed photodetectors ehlanganiswe ne-silicon-based optoelectronics platforms ibe yinto ebalulekileyo kumaziko edatha yesizukulwana esilandelayo kunye neenethiwekhi zonxibelelwano. Eli nqaku liza kubonelela ngamagqabantshintshi eefotodetectors ezinesantya esiphezulu esiphakamileyo, kugxininiswa kwisilicon esekwe kwigermanium (Ge okanye Si photodetector)i-silicon photodetectorsiteknoloji ye-optoelectronics ehlanganisiweyo.

I-Germanium sisixhobo esinomtsalane sokufunyaniswa kokukhanya kwe-infrared kumaqonga e-silicon kuba iyahambelana neenkqubo ze-CMOS kwaye ifunxa eyomeleleyo kunxibelelwano lwamaza onxibelelwano. Esona sakhiwo siqhelekileyo se-Ge/Si se-photodetector yi-pin diode, apho i-intrinsic germanium ifakwe phakathi kwemimandla yohlobo lwe-P kunye nohlobo lwe-N.

Ubume besixhobo Umfanekiso we-1 ubonisa iphini eliqhelekileyo elithe nkqo Ge okanyeSiyi-photodetectorisakhiwo:

Ezona mpawu ziphambili zibandakanya: umaleko wokufunxa igermanium okhule kwi-silicon substrate; Isetyenziselwa ukuqokelela p kunye n abafowunelwa abathwali bentlawulo; Udibaniso lweWaveguide lokufunxa ukukhanya okusebenzayo.

Ukukhula kwe-Epitaxial: Ukukhula komgangatho ophezulu wegermanium kwisilicon kulucelomngeni ngenxa ye-4.2% yelathisi engahambelaniyo phakathi kwezi zinto zimbini. Inkqubo yokukhula enamanyathelo amabini idla ngokusetyenziswa: ubushushu obuphantsi (300-400°C) ukukhula kwebuffer layer kunye nobushushu obuphezulu (bungaphezu kwama-600°C) ukubekwa kwegermanium. Le ndlela inceda ekulawuleni ukutsalwa kwemisonto okubangelwa kukungahambelani kweeleti. I-post-grow annealing kwi-800-900 ° C iyancipha ngakumbi i-threading dislocation density malunga ne-10 ^ 7 cm ^ -2. Iimpawu zokusebenza: I-Ge / Si ye-PIN ye-photodetector ephezulu kakhulu inokufezekisa: ukuphendula,> 0.8A / W kwi-1550 nm; Ububanzi,>60 GHz; Ubumnyama bangoku, <1 μA kwi -1 V bias.

Ukudibanisa kunye neeplatifti ze-silicon-based optoelectronics

Ukudityaniswa kweii-photodetectors ezinesantya esiphezulukunye ne-silicon-based optoelectronics platforms yenza ukuba i-transceivers optical advanced kunye nokudibanisa. Iindlela ezimbini eziphambili zokudibanisa zimi ngolu hlobo lulandelayo: Ukuhlanganiswa kwe-Front-end (FEOL), apho i-photodetector kunye ne-transistor zenziwa ngaxeshanye kwi-silicon substrate evumela ukulungiswa kobushushu obuphezulu, kodwa ithatha indawo ye-chip. Ukudityaniswa kwesiphelo sangasemva (BEOL). Iifoto ze-Photodetectors zenziwe ngaphezulu kwesinyithi ukuphepha ukuphazamiseka kwe-CMOS, kodwa zilinganiselwe kumaqondo okushisa aphantsi.

Umzobo 2: Ukuphendula kunye ne-bandwidth ye-high-speed Ge / Si photodetector

Isicelo seziko ledatha

Iifoto ze-Speed-speed photodetectors ziyinxalenye ephambili kwisizukulwana esilandelayo sokudityaniswa kweziko ledatha. Izicelo eziphambili ziquka: i-transceivers optical: 100G, 400G kunye namazinga aphezulu, usebenzisa i-PAM-4 modulation; Aumkhangeli wefoto we-bandwidth ephezulu(>50 GHz) iyafuneka.

I-Silicon-based based optoelectronic circuit integrated: ukuhlanganiswa kwe-monolithic ye-detector kunye ne-modulator kunye nezinye izinto; Injini yokukhanya ecwengileyo, esebenza kakhulu.

I-architecture esasazwayo: uqhagamshelwano lwe-optical phakathi kwe-computing esasazwayo, ukugcinwa kunye nokugcinwa; Ukuqhuba imfuno ye-eneji eyongayo, i-high-bandwidth photodetectors.

Imbono yekamva

Ikamva le-optoelectronic photodetectors edibeneyo enesantya esiphezulu iya kubonisa ezi ndlela zilandelayo:

Amanani aphezulu edatha: Ukuqhuba uphuhliso lwe-800G kunye ne-1.6T i-transceivers; Kufuneka ii-photodetectors ezine-bandwidth ezingaphezu kwe-100 GHz.

Ukuhlanganiswa okuphuculweyo: Ukuhlanganiswa kwe-chip enye yezinto ze-III-V kunye ne-silicon; Itekhnoloji yokudityaniswa kwe-3D ephezulu.

Izixhobo ezitsha: Ukuphonononga izinto ezine-dimensional (ezifana negraphene) zokufumana ukukhanya kwe-ultrafast; I-alloy yeQela IV entsha yokugubungela ubude be-wavelength.

Izicelo ezikhulayo: I-LiDAR kunye nezinye izicelo zokuva ziqhuba ukuphuhliswa kwe-APD; Usetyenziso lwe-Microwave photon lufuna ii-photodetectors zomgca ophezulu.

Iifoto ze-Speed-speed photodetectors, ngakumbi i-Ge okanye i-Si photodetectors, ziye zaba ngumqhubi ophambili we-silicon-based optoelectronics kunye nesizukulwana esilandelayo sonxibelelwano lwe-optical. Ukuqhubela phambili okuqhubekayo kwimathiriyeli, uyilo lwesixhobo, kunye nobuchwepheshe bokudibanisa kubalulekile ukuhlangabezana neemfuno ezikhulayo ze-bandwidth yamaziko edatha exesha elizayo kunye nothungelwano lonxibelelwano. Njengoko intsimi iqhubeka nokuvela, sinokulindela ukubona ii-photodetectors ezine-bandwidth ephezulu, ingxolo ephantsi, kunye nokudityaniswa komthungo kunye neesekethe ze-elektroniki kunye neefotonic.