Isiphumo se-silicon carbide diode enamandla aphezulu kwi-PIN Photodetector

Isiphumo se-silicon carbide diode enamandla aphezulu kwiIsixhobo sokubona ifoto sePIN

I-PIN diode ye-silicon carbide enamandla aphezulu ibisoloko iyeyona ndawo iphambili kwicandelo lophando lwezixhobo zamandla. I-PIN diode yi-crystal diode eyakhiwe ngokuhlanganisa umaleko we-intrinsic semiconductor (okanye i-semiconductor enoxinzelelo oluphantsi lokungcola) phakathi kommandla we-P+ kunye nommandla we-n+. I-i kwi-PIN sisifinyezo sesiNgesi sentsingiselo ye-"intrinsic", kuba akunakwenzeka ukuba kubekho i-semiconductor ecocekileyo ngaphandle kokungcola, ngoko ke umaleko we-I we-PIN diode kwisicelo uxutywe kancinci nobungakanani obuncinci bokungcola kohlobo lwe-P okanye uhlobo lwe-N. Okwangoku, i-PIN diode ye-silicon carbide ikakhulu isebenzisa isakhiwo seMesa kunye nesakhiwo seplani.

Xa i-frequency yokusebenza ye-PIN diode idlula i-100MHz, ngenxa yesiphumo sokugcina seenkampani ezimbalwa ezithwala imithwalo kunye nesiphumo sexesha lokuhamba kwi-layer I, i-diode ilahlekelwa sisiphumo sokulungisa kwaye ibe yinto ye-impedance, kwaye ixabiso layo le-impedance liyatshintsha nge-voltage ye-bias. Kwi-zero bias okanye i-DC reverse bias, i-impedance kwingingqi ye-I iphezulu kakhulu. Kwi-DC forward bias, ingingqi ye-I ibonakalisa imeko ye-impedance ephantsi ngenxa ye-carrier injection. Ke ngoko, i-PIN diode ingasetyenziswa njenge-variable impedance element, kwicandelo lolawulo lwe-microwave kunye ne-RF, kudla ngokuba yimfuneko ukusebenzisa izixhobo zokutshintsha ukuze kufezekiswe utshintsho lwesignali, ngakumbi kwezinye iziko zolawulo lwesignali ezine-frequency ephezulu, ii-PIN diodes zinamandla okulawula isignali ye-RF aphezulu, kodwa zikwasetyenziswa kakhulu kwi-phase shift, modulation, limiting kunye nezinye iisekethe.

I-silicon carbide diode enamandla aphezulu isetyenziswa kakhulu kwicandelo lamandla ngenxa yeempawu zayo zokumelana nombane ophezulu, ikakhulu isetyenziswa njengetyhubhu yokulungisa amandla aphezulu.I-PIN diodeine-voltage ephezulu ye-reverse critical breakdown voltage VB, ngenxa yokuba i-doping i layer ephantsi embindini ithwala i-voltage drop ephambili. Ukwandisa ubukhulu be-zone I kunye nokunciphisa uxinzelelo lwe-doping ye-zone ndingayiphucula ngempumelelo i-voltage ye-reverse breakdown ye-PIN diode, kodwa ukubakho kwe-zone I kuya kuyiphucula i-forward voltage drop VF yesixhobo sonke kunye nexesha lokutshintsha kwesixhobo ukuya kwinqanaba elithile, kwaye i-diode eyenziwe ngezinto ze-silicon carbide ingenza ezi ntsilelo. I-Silicon carbide iphindwe kalishumi kune-critical breakdown electric field ye-silicon, ukuze ubukhulu be-silicon carbide diode I zone buncitshiswe bube yinxalenye yeshumi yetyhubhu ye-silicon, ngelixa kugcinwa i-voltage ephezulu ye-breakdown, kunye ne-conductivity elungileyo ye-thermal yezinto ze-silicon carbide, akuyi kubakho ngxaki zicacileyo zokusasaza ubushushu, ngoko ke i-silicon carbide diode enamandla aphezulu ibe sisixhobo esibalulekileyo sokulungisa izixhobo ze-elektroniki zanamhlanje.

Ngenxa yokuba i-reverse leakage current yayo encinci kakhulu kunye ne-carrier movement ephezulu, ii-silicon carbide diodes zinomtsalane omkhulu kwicandelo lokufumanisa i-photoelectric. I-leakage current encinci inokunciphisa i-dark current ye-detector kwaye inciphise ingxolo; I-carrier movement ephezulu inokuphucula ngempumelelo uvakalelo lwe-silicon carbide.Isikhangeli se-PIN(I-PIN Photodetector). Iimpawu ezinamandla aphezulu zee-silicon carbide diodes zenza ukuba ii-PIN detectors zikwazi ukubona imithombo yokukhanya enamandla kwaye zisetyenziswa kakhulu kwindawo yasemajukujukwini. I-silicon carbide diode enamandla aphezulu iye yaqwalaselwa ngenxa yeempawu zayo ezibalaseleyo, kwaye uphando lwayo luye lwaphuhliswa kakhulu.