Isiphumo se-silicon carbide diode ephezulu yamandla kwiI-PIN Photodetector
Amandla aphezulu e-silicon carbide PIN diode ibisoloko iyenye yezona ndawo ziphambili kuphando lwesixhobo samandla. I-PIN diode yi-crystal diode eyakhiwe nge-sandwiching umaleko we-intrinsic semiconductor (okanye i-semiconductor ene-concentration ephantsi yokungcola) phakathi kommandla we-P + kunye nommandla we-n +. I-i kwi-PIN sisishunqulelo sesiNgesi sentsingiselo ye-"intrinsic", kuba akunakwenzeka ukuba kubekho i-semiconductor esulungekileyo ngaphandle kokungcola, ngoko ke umaleko we-PIN diode kwisicelo ungaphezulu okanye ngaphantsi uxutywe kunye nenani elincinci le-P-uhlobo okanye i-N-ubumdaka. Okwangoku, i-silicon carbide PIN diode ithatha ubukhulu becala ubume beMesa kunye nesakhiwo sendiza.
Xa ukusebenza rhoqo PIN diode idlula 100MHz, ngenxa isiphumo yokugcina abathwali ezimbalwa kunye nesiphumo ixesha transit kumaleko I, diode ilahlekelwa isiphumo ukulungiswa kwaye ibe element impedance, kwaye ixabiso layo impedance utshintsho kunye ombane bias. Kwi-zero bias okanye i-DC reverse bias, i-impedance kwindawo ye-I iphezulu kakhulu. Kwi-DC phambili i-bias, ummandla we-I ubonisa imeko ephantsi ye-impedance ngenxa yenaliti yomthwali. Ke ngoko, i-PIN diode inokusetyenziswa njengento eguquguqukayo yokuthintela, kwibala le-microwave kunye nolawulo lweRF, kudla ngokuba yimfuneko ukusebenzisa izixhobo zokutshintsha ukuphumeza ukutshintshwa komqondiso, ngakumbi kumaziko athile olawulo lophawu oluphezulu, ii-PIN diode zinamandla okulawula umqondiso we-RF, kodwa zisetyenziswa ngokubanzi kwisigaba sokutshintsha, ukumodareyitha, ukukhawulela kunye nezinye iisekethe.
I-silicon carbide diode ephezulu yamandla isetyenziswa kakhulu kwindawo yamandla ngenxa yeempawu zayo zokumelana nombane ophezulu, ikakhulu isetyenziswa njengetyhubhu yokuhlaziya amandla aphezulu. II-PIN diodeine-voltage ephezulu ebuyela umva ebaluleke kakhulu yokuqhekeka kwe-VB, ngenxa ye-doping i-i layer embindini ethwele ukwehla kwamandla ombane. Ukonyusa ubukhulu bendawo I kunye nokunciphisa ugxininiso lwe-doping yendawo ndingawuphucula ngokufanelekileyo amandla ombane obuya umva we-PIN diode, kodwa ubukho bendawo ndiya kuphucula i-VF ye-voltage yangaphambili ye-VF yesixhobo sonke kunye nexesha lokutshintsha kwesixhobo ukuya kumgama othile, kunye ne-diode eyenziwe nge-silicon carbide imathiriyeli inokwenza ezi ntsilelo. I-silicon carbide amaxesha ali-10 ukuphuka okubalulekileyo kwintsimi yombane ye-silicon, ukwenzela ukuba ubukhulu be-silicon carbide diode I zone buncitshiswe ukuya kwisinye seshumi se-silicon ityhubhu, ngelixa kugcinwa umbane ophezulu wokuphuka, kunye nokuhamba kakuhle kwe-thermal ye-silicon carbide, akuyi kubakho iingxaki ezicacileyo zokutshatyalaliswa kobushushu, ngoko ke i-silicon ye-diode ibaluleke kakhulu kwintsimi ye-diode yemoto ebaluleke kakhulu. izinto zombane.
Ngenxa yokuvuza kwayo okuncinci kokuvuza kwangoku kunye nokuhamba okuphezulu okuthwala, i-silicon carbide diode inomtsalane omkhulu kwibala lokufunyanwa kwefoto yombane. Ukuvuza okuncinci okwangoku kunokunciphisa umbane omnyama we-detector kunye nokunciphisa ingxolo; Ukuhamba kwe-carrier ephezulu kunokuphucula ngokufanelekileyo uvakalelo lwe-silicon carbideIsikhangeli se-PIN(I-PIN Photodetector). Iimpawu eziphezulu zamandla e-silicon carbide diode zenza ukuba ii-PIN detectors zibone imithombo yokukhanya eyomeleleyo kwaye zisetyenziswa ngokubanzi kwibala lendawo. Amandla aphezulu e-silicon carbide diode inikwe ingqalelo ngenxa yeempawu zayo ezibalaseleyo, kwaye uphando lwayo luphuhliswe kakhulu.
Ixesha lokuposa: Oct-13-2023