Isiphumo se-silicon carbide diode ephezulu yamandla kwi-PIN Photodetector
Amandla aphezulu e-silicon carbide PIN diode ibisoloko iyenye yezona ndawo ziphambili kuphando lwesixhobo samandla. I-PIN diode yi-crystal diode eyakhiwe nge-sandwiching umaleko we-intrinsic semiconductor (okanye i-semiconductor ene-concentration ephantsi yokungcola) phakathi kommandla we-P + kunye nommandla we-n +. I-i kwi-PIN sisishunqulelo sesiNgesi sentsingiselo ye "intrinsic", kuba akunakwenzeka ukuba kubekho i-semiconductor esulungekileyo ngaphandle kokungcola, ngoko ke umaleko we-PIN diode kwisicelo ungaphezulu okanye ngaphantsi uxutywe kunye nenani elincinci le-P. -udidi okanye udidi lweN-ubumdaka. Okwangoku, i-silicon carbide PIN diode ithatha ubukhulu becala ubume beMesa kunye nesakhiwo sendiza.
Xa ukusebenza rhoqo PIN diode idlula 100MHz, ngenxa isiphumo yokugcina abathwali ezimbalwa kunye nesiphumo ixesha transit kumaleko I, diode ilahlekelwa isiphumo ukulungiswa kwaye ibe element impedance, kwaye ixabiso layo impedance utshintsho kunye ombane bias. Kwi-zero bias okanye i-DC reverse bias, i-impedance kwindawo ye-I iphezulu kakhulu. Kwi-DC phambili i-bias, ummandla we-I ubonisa imeko ephantsi ye-impedance ngenxa yenaliti yomthwali. Ke ngoko, i-PIN diode inokusetyenziswa njengento eguquguqukayo yokuthintela, kwibala le-microwave kunye nolawulo lweRF, kudla ngokuba yimfuneko ukusebenzisa izixhobo zokutshintsha ukuze kuphunyezwe ukutshintshwa komqondiso, ngakumbi kumaziko olawulo lwesignali aphezulu, ii-PIN diode ziphezulu. Izakhono zokulawula umqondiso weRF, kodwa ikwasetyenziswa ngokubanzi kutshintsho lwesigaba, ukumodareyitha, ukunciphisa kunye nezinye iisekethe.
I-silicon carbide diode ephezulu yamandla isetyenziswa kakhulu kwindawo yamandla ngenxa yeempawu zayo zokumelana nombane ophezulu, ikakhulu isetyenziswa njengetyhubhu yokuhlaziya amandla aphezulu. I-PIN diode ine-voltage ephezulu eguqukayo ebaluleke kakhulu yokuqhekeka kwe-VB, ngenxa ye-doping ephantsi yomaleko phakathi ethwele ukuhla kwamandla ombane. Ukonyusa ubukhulu bendawo I kunye nokunciphisa ugxininiso lwe-doping yendawo ndingawuphucula ngokufanelekileyo amandla ombane wokuqhekeka we-PIN diode, kodwa ubukho bendawo ndiya kuphucula ukuhla kwamandla ombane angaphambili kwi-VF yesixhobo sonke kunye nexesha lokutshintsha kwesixhobo. ukuya kumlinganiselo othile, kunye ne-diode eyenziwe nge-silicon carbide imathiriyeli inokwenza ezi ntsilelo. I-silicon carbide amaxesha ali-10 intsimi yombane ye-silicon, ukwenzela ukuba ubukhulu be-silicon carbide diode I zone buncitshiswe ukuya kwisinye seshumi se-silicon ityhubhu, ngelixa ugcina amandla ombane aphezulu, kunye nokuhamba kakuhle kwe-thermal ye-silicon carbide materials. , akuyi kubakho zingxaki zicacileyo zokutshatyalaliswa kobushushu, ngoko ke amandla aphezulu e-silicon carbide diode iye yaba sisixhobo esibaluleke kakhulu sokulungisa kwindawo yombane wamandla wale mihla.
Ngenxa yokuvuza kwayo okuncinci kokuvuza kwangoku kunye nokuhamba okuphezulu okuthwala, i-silicon carbide diode inomtsalane omkhulu kwibala lokufunyanwa kwefoto yombane. Ukuvuza okuncinci okwangoku kunokunciphisa umbane omnyama we-detector kunye nokunciphisa ingxolo; Ukushukumiseka okuphezulu kwe-carrier kunokuphucula ngokufanelekileyo ubuntununtunu be-silicon carbide PIN detector (PIN Photodetector). Iimpawu eziphezulu zamandla e-silicon carbide diode zenza ukuba ii-PIN detectors zibone imithombo yokukhanya eyomeleleyo kwaye zisetyenziswa ngokubanzi kwibala lendawo. Amandla aphezulu e-silicon carbide diode inikwe ingqalelo ngenxa yeempawu zayo ezibalaseleyo, kwaye uphando lwayo luphuhliswe kakhulu.
Ixesha lokuposa: Oct-13-2023