I-optoelectronic esekwe kwi-silicon encinciUmlungisi we-IQunxibelelwano oluhambelanayo olukhawulezayo
Imfuno ekhulayo yamazinga aphezulu okudluliselwa kwedatha kunye nee-transceivers ezisebenzisa umbane kakuhle kwiindawo zedatha iqhubele phambili uphuhliso lwentsebenzo encinci ephezulu.iimodulators ezibonakalayoItekhnoloji ye-optoelectronic esekwe kwi-silicon (i-SiPh) ibe liqonga elithembisayo lokudibanisa izinto ezahlukeneyo ze-photonic kwi-chip enye, nto leyo evumela izisombululo ezincinci nezingabizi kakhulu. Eli nqaku liza kuhlola i-modulator entsha ye-silicon IQ ecinezelweyo esekwe kwi-GeSi EAMs, enokusebenza rhoqo ukuya kuthi ga kwi-75 Gbaud.
Uyilo lwesixhobo kunye neempawu zaso
I-IQ modulator ecetywayo isebenzisa isakhiwo esincinci seengalo ezintathu, njengoko kubonisiwe kuMfanekiso 1 (a). Yenziwe zii-GeSi EAM ezintathu kunye nee-thermo optical phase shifters ezintathu, yamkela ulungelelwaniso olulinganayo. Ukukhanya kokufaka kudityaniswe kwi-chip nge-grating coupler (GC) kwaye kwahlulwe ngokulinganayo kwiindlela ezintathu nge-1×3 multimode interferometer (MMI). Emva kokudlula kwi-modulator kunye ne-phase shifter, ukukhanya kuhlanganiswa kwakhona ngenye i-1×3 MMI kwaye emva koko kudityaniswe kwi-single-mode fiber (SSMF).
Umfanekiso 1: (a) Umfanekiso we-Microscopic we-IQ modulator; (b) – (d) I-EO S21, i-extinction ratio spectrum, kunye nokudluliselwa kwe-GeSi EAM enye; (e) Umzobo we-Schematic we-IQ modulator kunye ne-optical phase ehambelanayo ye-phase shifter; (f) Ukubonakaliswa koxinzelelo lwe-carrier kwi-complex plane. Njengoko kubonisiwe kuMfanekiso 1 (b), i-GeSi EAM ine-wide electro-optic bandwidth ebanzi. Umfanekiso 1 (b) ulinganise i-S21 parameter yesakhiwo sovavanyo lwe-GeSi EAM esinye kusetyenziswa i-67 GHz optical component analyzer (LCA). Umfanekiso 1 (c) kunye no-1 (d) ngokulandelelana zibonisa i-static extinction ratio (ER) spectra kwii-voltage ezahlukeneyo ze-DC kunye nokudluliselwa kwi-wavelength ye-1555 nanometers.
Njengoko kubonisiwe kuMfanekiso 1 (e), uphawu oluphambili lolu yilo kukukwazi ukucinezela abathwali be-optical ngokulungelelanisa i-integrated phase shifter engalweni ephakathi. Umahluko wesigaba phakathi kweengalo eziphezulu nezisezantsi yi-π/2, esetyenziselwa ukulungiswa okuntsonkothileyo, ngelixa umahluko wesigaba phakathi kwengalo ephakathi yi--3 π/4. Olu lungiselelo luvumela ukuphazamiseka okubhubhisayo kwi-carrier, njengoko kubonisiwe kwi-complex plane yoMfanekiso 1 (f).
Useto lovavanyo kunye neziphumo
Useto lovavanyo olukhawulezayo luboniswe kuMfanekiso 2 (a). Ijenereyitha ye-waveform engacwangciswanga (Keysight M8194A) isetyenziswa njengomthombo wesignali, kwaye ii-amplifier ezimbini ze-RF ezihambelana nesigaba se-60 GHz (ezinee-tee ze-bias ezidibeneyo) zisetyenziswa njengee-modulator drivers. I-voltage ye-bias ye-GeSi EAM yi--2.5 V, kwaye intambo ye-RF ehambelana nesigaba isetyenziswa ukunciphisa ukungalingani kwesigaba sombane phakathi kweziteshi ze-I kunye ne-Q.
Umfanekiso 2: (a) Ukuseta uvavanyo olukhawulezayo, (b) Ukunciphisa umthwali kwi-70 Gbaud, (c) Izinga lempazamo kunye nezinga ledatha, (d) I-Constellation kwi-70 Gbaud. Sebenzisa i-laser yangaphandle ye-commercial cavity (ECL) enobubanzi bomgca we-100 kHz, ubude bomda we-1555 nm, kunye namandla e-12 dBm njenge-carrier ye-optical. Emva kokuguqulwa, isignali ye-optical iyandiswa kusetyenziswa i-i-amplifier yefayibha efakwe i-erbium(EDFA) ukuhlawula ilahleko zokudibanisa kwi-chip kunye nelahleko zokufakwa kwe-modulator.
Kwicala lokwamkela, i-Optical Spectrum Analyzer (OSA) ijonga i-signal spectrum kunye noxinzelelo lomthwali, njengoko kubonisiwe kuMfanekiso 2 (b) kwisignali ye-70 Gbaud. Sebenzisa i-dual polarization coherent receiver ukuze ufumane imiqondiso, equlathe i-90 degree optical mixer kunye ne-fourIifotodiode ezilinganisiweyo ze-40 GHz, kwaye iqhagamshelwe kwi-33 GHz, 80 GSa/s real-time oscilloscope (RTO) (Keysight DSOZ634A). Umthombo wesibini we-ECL onobubanzi bomgca we-100 kHz usetyenziswa njenge-local oscillator (LO). Ngenxa yokuba i-transmitter isebenza phantsi kweemeko ze-single polarization, zimbini kuphela iindlela ze-elektroniki ezisetyenziselwa ukuguqulwa kwe-analog-to-digital (ADC). Idatha irekhodwa kwi-RTO kwaye icutshungulwa kusetyenziswa iprosesa yesignali yedijithali engaxhunyiwe kwi-intanethi (DSP).
Njengoko kubonisiwe kuMfanekiso 2 (c), i-IQ modulator ivavanyiwe kusetyenziswa ifomathi ye-QPSK modulation ukusuka kwi-40 Gbaud ukuya kwi-75 Gbaud. Iziphumo zibonisa ukuba phantsi kwe-7% yeemeko zokulungiswa kwempazamo yesigqibo esinzima (HD-FEC), izinga linokufikelela kwi-140 Gb/s; Phantsi kwemeko yokulungiswa kwempazamo yesigqibo esithambileyo (SD-FEC) ye-20%, isantya sinokufikelela kwi-150 Gb/s. Umzobo we-constellation kwi-70 Gbaud uboniswe kuMfanekiso 2 (d). Isiphumo sinqunyelwe yi-bandwidth ye-oscilloscope ye-33 GHz, elingana ne-bandwidth yesignali emalunga ne-66 Gbaud.
Njengoko kubonisiwe kuMfanekiso 2 (b), ulwakhiwo lweengalo ezintathu lunokuzicinezela ngempumelelo ii-optical carriers ngesantya sokungagqibeki esidlula i-30 dB. Olu lwakhiwo aludingi kucinezelwa ngokupheleleyo kwe-carrier kwaye lungasetyenziswa nakwii-receivers ezifuna iitoni ze-carrier ukuze zibuyisele imiqondiso, njenge-Kramer Kronig (KK) receivers. I-carrier ingalungiswa nge-central arm phase shifter ukuze kufezekiswe umlinganiselo we-carrier kwi-sideband oyifunayo (CSR).
Iingenelo kunye nezicelo
Xa kuthelekiswa nee-modulators zemveli zeMach Zehnder (Iimodulators ze-MZM) kunye nezinye ii-modulators ze-IQ ze-optoelectronic ezisekelwe kwi-silicon, i-modulator ye-IQ ye-silicon ecetywayo ineenzuzo ezininzi. Okokuqala, incinci ngobukhulu, incinci ngokuphindwe kalishumi kunee-modulators ze-IQ ezisekelwe kwi-Iimodulators zikaMach Zehnder(ngaphandle kwee-bonding pads), ngaloo ndlela kwandisa uxinano lokudibanisa kunye nokunciphisa indawo ye-chip. Okwesibini, uyilo lwe-electrode edibeneyo aludingi ukusetyenziswa kwee-resistors zesiphelo, ngaloo ndlela kunciphisa amandla esixhobo kunye namandla nge-bit nganye. Okwesithathu, amandla okunciphisa umbane we-carrier andisa ukunciphisa amandla okuhambisa, nto leyo ephucula ngakumbi ukusebenza kakuhle kwamandla.
Ukongeza, i-bandwidth ye-optical ye-GeSi EAM ibanzi kakhulu (ngaphezulu kwe-30 nanometers), nto leyo esusa imfuneko yeesekethe zolawulo lwempendulo ye-multi-channel kunye neeprosesa ukuze kuzinziswe kwaye kuvumelaniswe i-resonance yee-microwave modulators (ii-MRM), ngaloo ndlela kube lula ukuyila.
Le modulator ye-IQ incinci kwaye isebenza kakuhle ifaneleka kakhulu kwisizukulwana esilandelayo, inani eliphezulu leetshaneli, kunye nee-transceivers ezincinci ezihambelanayo kwiindawo zedatha, nto leyo evumela amandla aphezulu kunye nonxibelelwano lwe-optical olusebenzisa amandla amaninzi.
I-modulator ye-silicon IQ ecinezelweyo ye-carrier ibonisa ukusebenza okugqwesileyo, kunye nesantya sokudluliselwa kwedatha ukuya kuthi ga kwi-150 Gb/s phantsi kweemeko ze-20% ze-SD-FEC. Ulwakhiwo lwayo oluncinci olunengalo ezi-3 olusekwe kwi-GeSi EAM luneenzuzo ezibalulekileyo ngokubhekiselele kunyawo, ukusebenza kakuhle kwamandla, kunye nokulula koyilo. Le modulator inamandla okucinezela okanye ukulungisa i-optical carrier kwaye inokudityaniswa ne-coherent detection kunye ne-Kramer Kronig (KK) detection schemes ze-multi-line compact coherent transceivers. Impumelelo ebonisiweyo iqhuba ukufezekiswa kwe-optical transceivers edibeneyo kakhulu nesebenzayo ukuhlangabezana nemfuno ekhulayo yonxibelelwano lwedatha olunamandla aphezulu kwiziko ledatha nakwamanye amasimi.
Ixesha leposi: Jan-21-2025