Isixhobo sokubona i-infrared avalanche esisezantsi

I-infrared engaphantsi komgangathoisixhobo sokubona ifoto se-avalanche

Isixhobo sokubona i-infrared avalanche photodetector (Isixhobo sokubona ifoto se-APD) ludidi lweizixhobo ze-semiconductor photoelectricezivelisa inzuzo ephezulu ngesiphumo se-collision ionization, ukuze kufezekiswe amandla okufumanisa ama-photon ambalwa okanye ii-photon enye. Nangona kunjalo, kwizakhiwo ze-APD photodetector eziqhelekileyo, inkqubo yokusasazeka kwe-non-equilibrium carrier ikhokelela ekulahlekelweni kwamandla, kangangokuba i-avalanche threshold voltage idla ngokufuna ukufikelela kwi-50-200 V. Oku kubeka iimfuno eziphezulu kwi-drive voltage yesixhobo kunye noyilo lwesekethe yokufunda, okunyusa iindleko kunye nokunciphisa ukusetyenziswa okubanzi.

Kutshanje, uphando lwaseTshayina lucebise isakhiwo esitsha se-avalanche kufutshane ne-infrared detector ene-voltage ephantsi ye-avalanche threshold kunye ne-sensitivity ephezulu. Ngokusekelwe kwi-self-doping homojunction ye-atomic layer, i-avalanche photodetector isombulula i-scattering enobungozi ebangelwa yi-interface defect state engenakuphepheka kwi-heterojunction. Okwangoku, i-power power "peak" yendawo enamandla ebangelwa kukwaphuka kwe-translation symmetry isetyenziselwa ukuphucula intsebenziswano ye-coulomb phakathi kwe-carriers, ukucinezela i-off-plane phonon mode elawulwa yi-scattering, kunye nokufezekisa ukusebenza okuphindwe kabini kwe-non-equilibrium carriers. Kwiqondo lobushushu begumbi, amandla e-threshold asondele kumda wethiyori Eg (Eg yi-band gap ye-semiconductor) kwaye uvakalelo lokubona lwe-infrared avalanche detector lufikelela kwinqanaba le-10000 le-photon.

Olu phononongo lusekelwe kwi-atom-layer self-doped tungsten diselenide (WSe₂) homojunction (two-dimensional transition metal chalcogenide, TMD) njenge-gain medium ye-avalanches ye-charge carrier. Ukuqhekeka kolungelelwaniso lwesithuba kufezekiswa ngokuyila i-topography step mutation ukuze kubangele intsimi yombane enamandla yendawo "spike" kwi-interface ye-mutant homojunction.

Ukongeza, ubukhulu be-athomu bunokuyicinezela indlela yokusasazeka elawulwa yimo ye-phonon, kwaye buqaphele inkqubo yokukhawulezisa kunye nokuphindaphinda kwe-non-equilibrium carrier kunye nelahleko ephantsi kakhulu. Oku kuzisa amandla omlinganiselo we-avalanche kubushushu begumbi kufutshane nomda wethiyori oko kukuthi i-bandgap yezixhobo ze-semiconductor Umz. Umthamo womlinganiselo we-avalanche wehlisiwe ukusuka kwi-50 V ukuya kwi-1.6 V, okuvumela abaphandi ukuba basebenzise iisekethe zedijithali ezivuthiweyo eziphantsi kwamandla ukuqhuba i-avalanche.isixhobo sokubona iifotokunye nee-drive diodes kunye nee-transistors. Olu phononongo luqonda ukuguqulwa okusebenzayo kunye nokusetyenziswa kwamandla okuthwala angengowokulingana ngoyilo lwesiphumo sokuphindaphinda kwe-avalanche esingaphantsi komlinganiselo ophantsi, esibonelela ngombono omtsha wophuhliso lwesizukulwana esilandelayo setekhnoloji yokufumanisa i-infrared ye-infrared enobuthathaka kakhulu, engaphantsi komlinganiselo kunye ne-high gain avalanche.