Umda osezantsi we-infraredi-avalanche photodetector
Isikhangeli sokufota nge-infrared avalanche (Isixhobo sokufota seAPD) yiklasi yeizixhobo zombane ze-semiconductorezivelisa inzuzo ephezulu ngokungqubana kwe-ionization effect, ukuze kuphunyezwe isakhono sokubona iifotoni ezimbalwa okanye neefotoni enye. Nangona kunjalo, kwizakhiwo eziqhelekileyo ze-APD ze-photodetector, inkqubo yokusabalalisa i-non-equilibrium carrier ikhokelela ekulahlekeni kwamandla, njengokuba i-avalanche threshold voltage kufuneka ifikelele kwi-50-200 V. Oku kubeka iimfuno eziphezulu kwi-voltage yesixhobo kunye noyilo lwesekethe yokufunda, ukwandisa iindleko kunye nokunciphisa izicelo ezibanzi.
Kutshanje, uphando lwaseTshayina lucebise ngesakhiwo esitsha se-avalanche kufutshane nesixhobo se-infrared esinombane ophantsi we-avalanche threshold voltage kunye novakalelo oluphezulu. Ngokusekwe kwi-self-doping homojunction yomaleko we-athom, i-avalanche photodetector isombulula ukusasazeka okuyingozi okubangelwa yimeko yesiphako sojongano olungenakuthintelwa kwi-heterojunction. Ngeli xesha, indawo yombane eyomeleleyo yendawo "yencopho" eyenziwe kukuguqulelwa kwe-symmetry breaking isetyenziselwa ukuphucula intsebenziswano ye-coulomb phakathi kwabathwali, ukucinezela imowudi ye-phonon elawulwa yi-off-plane elawulwayo, kunye nokufezekisa ukusebenza kakuhle okuphindwe kabini kwabathwali abangabalingani. Kwiqondo lobushushu begumbi, i-threshold energy isondele kumda wethiyori Umz.
Olu phononongo lusekelwe kwi-atom-layer self-doped tungsten diselenide (WSe₂) i-homojunction (i-two-dimensional transition metal chalcogenide, TMD) njengendlela yokuzuza i-avalanche ye-carrier carrier. Ukwaphulwa kwe-symmetry yoguqulo lwesithuba kuphunyezwa ngokuyila inyathelo lokuguqula inyathelo lokujonga umhlaba ukuphembelela indawo eyomeleleyo yendawo yombane “yespike” kujongano lwe-homojunction eguqukayo.
Ukongeza, ubukhulu be-athomu bunokucinezela indlela yokusasaza elawulwa yimowudi yephonon, kwaye iqonde inkqubo yokukhawulezisa kunye nokuphindaphinda kwe-non-equilibrium carrier kunye nelahleko ephantsi kakhulu. Oku kuzisa i-avalanche threshold amandla kwiqondo lobushushu begumbi kufutshane nomda wethiyori okt i-semiconductor bandgap yemathiriyeli umz. I-avalanche threshold voltage yancitshiswa ukusuka kwi-50 V ukuya kwi-1.6 V, ivumela abaphandi ukuba basebenzise iisekethe ezivuthiweyo eziphantsi kwe-voltage yedijithali ukuqhuba i-avalanche.ifotodetectorkunye neediode zokuqhuba kunye neetransistors. Olu phononongo luqonda uguqulo olusebenzayo kunye nokusetyenziswa kwamandla othuthi angalinganiyo ngoyilo lwesiphumo sokuphindaphinda kwe-avalanche esezantsi, ebonelela ngembono entsha kuphuhliso lwesizukulwana esilandelayo sobuzwe obunovakalelo oluphezulu, umqobo ophantsi kunye nokuzuza okuphezulu kwetekhnoloji yokufumanisa i-avalanche infrared.
Ixesha lokuposa: Apr-16-2025