Intshayelelo kumphezulu othe nkqo we-semiconductor laser (VCSEL)

Intshayelelo ekuphumeni komphezulu othe nkqosemiconductor laser(VCSEL)
Iilaser ezikhupha umphezulu othe nkqo wangaphandle zaphuhliswa phakathi kwiminyaka yee-1990s ukoyisa ingxaki ephambili eye yathwaxa uphuhliso lweelasesi zesemiconductor zemveli: indlela yokuvelisa iziphumo zelaser ezinamandla aphezulu ezinomgangatho ophezulu womqadi kwimowudi enqamlezileyo esisiseko.
Iilaser ezikhupha umphezulu othe nkqo wangaphandle (Vecsels), owaziwa ngokubaiisemiconductor disc lasers(SDL), lilungu elitsha ngokwentelekiso kusapho laser. Iyakwazi ukuyila i-wavelength yokukhutshwa ngokuguqula ukubunjwa kwezinto kunye nobukhulu be-quantum kakuhle kwi-semiconductor yokuzuza okuphakathi, kwaye idityaniswe ne-intracavity frequency ngokuphindwe kabini inokugubungela uluhlu olubanzi lwamaza ukusuka kwi-ultraviolet ukuya kwi-infrared ekude, ifezekisa amandla aphezulu ngelixa igcina i-divergence ephantsi ye-Angle setyhula symmetric beam laser. I-laser resonator yenziwe ngesakhiwo esisezantsi se-DBR ye-chip yokuzuza kunye nesibuko sokudibanisa isiphumo sangaphandle. Esi sakhiwo sangaphandle se-resonator sangaphandle sivumela izinto ezibonakalayo ukuba zifakwe kumngxunya ukuze zisebenze ezifana nokuphindaphinda kabini, ukuhlukana rhoqo, kunye nokuvalwa kwendlela, okwenza i-VECSEL ibe yinto efanelekileyo.umthombo laserkwizicelo ezivela kwi-biophotonics, i-spectroscopy,iyeza laser, kunye noqikelelo lwelaser.
I-resonator ye-VC-surface emit semiconductor laser i-perpendicular kwinqwelomoya apho ummandla osebenzayo ukhoyo, kunye nokukhanya kwayo okuphumayo ku-perpendicular kwindiza yendawo esebenzayo, njengoko kubonisiwe kwi-figure.VCSEL ineenzuzo ezizodwa, ezifana nobukhulu obuncinci, ukuphindaphinda okuphezulu, umgangatho omhle we-beam, umqobo womonakalo omkhulu womphezulu, kunye nenkqubo yokuvelisa elula. Ibonisa ukusebenza okugqwesileyo kwizicelo ze-laser display, i-optical communication kunye newotshi yokubona. Nangona kunjalo, ii-VCsels azikwazi ukufumana iilaser zamandla aphezulu ngaphezulu kwenqanaba le-watt, ngoko ke azinakusetyenziswa emasimini aneemfuno eziphezulu zamandla.

I-laser resonator ye-VCSEL yenziwe nge-Bragg reflector (DBR) esasazwayo eyenziwe nge-multi-layer epitaxial structure yezinto ze-semiconductor kumacala omabini aphezulu nasezantsi ommandla osebenzayo, ohluke kakhululaseri-resonator yenziwe ngenqwelomoya eqhekezayo kwi-EEL. Ulwalathiso lwe-VCSEL optical resonator luyi-perpendicular kwi-chip surface, i-laser output nayo i-perpendicular kwi-chip surface, kwaye ukubonakala kwamacala omabini e-DBR kuphezulu kakhulu kune-EEL isisombululo sendiza.
Ubude be-laser resonator ye-VCSEL ngokuqhelekileyo i-microns ezimbalwa, ezincinci kakhulu kunezo ze-millimeter resonator ye-EEL, kwaye inzuzo yendlela enye efunyenwe yi-oscillation ye-optical field kwi-cavity iphantsi. Nangona imveliso yemowudi enqamlezileyo esisiseko inokufezekiswa, amandla emveliso anokufikelela kuphela kwii-milliwatts ezininzi. Iprofayili yecandelo le-cross-section ye-VCSEL ye-laser ye-laser beam isetyhula, kwaye i-Angle ye-divergence incinci kakhulu kune-edge-emitting laser beam. Ukufezekisa ukukhutshwa kwamandla aphezulu e-VCSEL, kuyimfuneko ukwandisa ummandla okhanyayo ukubonelela ngenzuzo engaphezulu, kwaye ukwanda kommandla okhanyayo kuya kubangela ukuba i-laser ephumayo ibe yimveliso yeendlela ezininzi. Ngexesha elifanayo, kunzima ukufezekisa i-injection yangoku efanayo kwingingqi enkulu ekhanyayo, kwaye i-injection yangoku engalinganiyo iya kwandisa inkunkuma yokuqokelela ukushisa.Ngokufutshane, i-VCSEL inokuvelisa imowudi yesiseko setyhula ye-symmetric spot ngokusebenzisa ulwakhiwo olufanelekileyo, kodwa amandla okuvelisa aphantsi xa imveliso imomowudi enye.Ngoko ke, iimodeli ezininzi ze-VCs zihlala zihlanganiswe kwi-model ephumayo.