Intshayelelo kwi-vertical cavity surface ekhupha i-semiconductor laser (VCSEL)

Intshayelelo kwi-vertical hole surface limiti-laser ye-semiconductor(VCSEL)
Iilaser ezikhupha umphezulu ezingaphandle ezithe nkqo zaphuhliswa phakathi kwiminyaka yoo-1990 ukuze koyiswe ingxaki ephambili ebisoloko ichaphazela uphuhliso lweelaser ze-semiconductor zemveli: indlela yokuvelisa iziphumo zelaser ezinamandla aphezulu ezinomgangatho ophezulu wemitha kwimo esisiseko enqamlezileyo.
Iileser ezikhupha umphezulu we-cavity yangaphandle ethe nkqo (iiVecsels), ezaziwa ngokubaiileyiza zediski ze-semiconductor(SDL), zilungu elitsha losapho lwelaser. Ingayila ubude be-emission ngokutshintsha ukwakheka kwezinto kunye nobukhulu be-quantum well kwi-semiconductor gain medium, kwaye xa idibene ne-intracavity frequency doubling ingagubungela uluhlu olubanzi lwe-wavelength ukusuka kwi-ultraviolet ukuya kwi-far infrared, ifezekise amandla aphezulu ngelixa igcina i-Angle circular symmetric laser beam ephantsi. I-laser resonator yenziwe ngesakhiwo se-DBR esisezantsi se-gain chip kunye nesipili esidibanisa imveliso yangaphandle. Esi sakhiwo sikhethekileyo se-resonator yangaphandle sivumela izinto ezibonakalayo ukuba zifakwe kwi-cavity kwimisebenzi efana nokuphindaphinda kwe-frequency, umahluko we-frequency, kunye ne-mode-locking, okwenza i-VECSEL ibe yeyona ifanelekileyo.umthombo welezakwizicelo ezisusela kwi-biophotonics, i-spectroscopy,amayeza e-laser, kunye nokuboniswa kweleza.
I-resonator ye-VC-surface ekhupha i-semiconductor laser imile nkqo kwindawo apho kukho indawo esebenzayo, kwaye ukukhanya kwayo okuphumayo kumile nkqo kwindawo esebenzayo, njengoko kubonisiwe kumfanekiso. I-VCSEL ineenzuzo ezikhethekileyo, ezinje ngobukhulu obuncinci, i-frequency ephezulu, umgangatho olungileyo we-beam, umda omkhulu womonakalo womphezulu, kunye nenkqubo elula yokuvelisa. Ibonisa ukusebenza okugqwesileyo ekusebenziseni i-laser display, unxibelelwano lwe-optical kunye newotshi ye-optical. Nangona kunjalo, ii-VCsels azinakufumana ii-laser ezinamandla aphezulu ngaphezu kwenqanaba le-watt, ngoko ke azinakusetyenziswa kwiindawo ezineemfuno zamandla aphezulu.

I-laser resonator ye-VCSEL yenziwe yi-distributed Bragg reflector (DBR) eyenziwe yi-multi-layer epitaxial structure yezinto ze-semiconductor kumacala omabini aphezulu nasezantsi ommandla osebenzayo, owahluke kakhulu kwi-ilezai-resonator eyenziwe yiplani ye-cleavage kwi-EEL. Icala le-resonator ye-VCSEL optical lithe nkqo kumphezulu we-chip, imveliso ye-laser ikwathe nkqo kumphezulu we-chip, kwaye ukubonakaliswa kwamacala omabini e-DBR kuphezulu kakhulu kunokweplani yesisombululo se-EEL.
Ubude be-laser resonator ye-VCSEL ngokubanzi buzii-microns ezimbalwa, nto leyo incinci kakhulu kune-millimeter resonator ye-EEL, kwaye i-one-way gain efunyenwe yi-optical field oscillation kwi-cavity iphantsi. Nangona i-basic transverse mode output inokufezekiswa, amandla okukhupha anokufikelela kwi-milliwatts ezininzi kuphela. Iprofayili ye-cross-section ye-VCSEL output laser beam ijikelezile, kwaye i-divergence Angle incinci kakhulu kune-edge-emitting laser beam. Ukuze kufezekiswe i-high power output ye-VCSEL, kuyimfuneko ukwandisa ummandla okhanyayo ukuze kubonelelwe nge-gain engakumbi, kwaye ukwanda kommandla okhanyayo kuya kubangela ukuba i-output laser ibe yi-multi-mode output. Kwangaxeshanye, kunzima ukufumana i-uniform current injection kwindawo enkulu ekhanyayo, kwaye i-evenly current injection iya kwenza kube nzima ukuqokelelwa kobushushu obungafunekiyo. Ngamafutshane, i-VCSEL inokukhupha indawo ye-basic mode circular symmetric spot ngoyilo olufanelekileyo lwesakhiwo, kodwa amandla okukhupha aphantsi xa i-output ikwi-single mode. Ke ngoko, ii-VCsel ezininzi zihlala zidityaniswa kwi-output mode.