Intshayelelo kumphezulu othe nkqo we-semiconductor laser (VCSEL)

Intshayelelo ekuphumeni komphezulu othe nkqosemiconductor laser(VCSEL)
Iilaser ezikhupha umphezulu othe nkqo wangaphandle zaphuhliswa phakathi kwiminyaka yee-1990s ukoyisa ingxaki ephambili eye yathwaxa uphuhliso lweelasesi zesemiconductor zemveli: indlela yokuvelisa iziphumo zelaser ezinamandla aphezulu ezinomgangatho ophezulu womqadi kwimowudi enqamlezileyo esisiseko.
Iilaser ezikhupha umphezulu othe nkqo wangaphandle (Vecsels), owaziwa ngokubaiisemiconductor disc lasers(SDL), lilungu elitsha ngokwentelekiso kusapho laser. Iyakwazi ukuyila i-wavelength yokukhutshwa ngokuguqula ukwakheka kwezinto kunye nobukhulu be-quantum kakuhle kwi-semiconductor yokufumana medium, kwaye idityaniswe ne-intracavity frequency ngokuphindwe kabini inokugubungela uluhlu olubanzi lwamaza ukusuka kwi-ultraviolet ukuya kwi-infrared ekude, ukufikelela kwimveliso yamandla aphezulu ngelixa ugcina umahluko ophantsi. I-Angle setyhula symmetric laser beam. I-laser resonator yenziwe ngesakhiwo esisezantsi se-DBR ye-chip yokuzuza kunye nesibuko sokudibanisa isiphumo sangaphandle. Esi sakhiwo sangaphandle se-resonator sangaphandle sivumela izinto ezibonakalayo ukuba zifakwe kumngxunya ukuze zisebenze ezifana nokuphindaphinda kabini, ukuhlukana rhoqo, kunye nokuvalwa kwendlela, okwenza i-VECSEL ibe yinto efanelekileyo.umthombo laserkwizicelo ezivela kwi-biophotonics, i-spectroscopy,iyeza laser, kunye noqikelelo lwelaser.
I-resonator ye-VC-surface emit semiconductor laser i-perpendicular kwinqwelomoya apho ummandla osebenzayo ukhoyo, kwaye ukukhanya kwayo okuphumayo kuxhomekeke kwindiza yendawo esebenzayo, njengoko kuboniswe kumfanekiso.VCSEL ineenzuzo ezizodwa, ezifana nezincinci. ubungakanani, amaza aphezulu, umgangatho olungileyo womqadi, umda womonakalo omkhulu womphezulu womhlaba, kunye nenkqubo yemveliso elula. Ibonisa ukusebenza okugqwesileyo kwizicelo ze-laser display, i-optical communication kunye newotshi yokubona. Nangona kunjalo, ii-VCsels azikwazi ukufumana iilaser zamandla aphezulu ngaphezulu kwenqanaba le-watt, ngoko ke azinakusetyenziswa emasimini aneemfuno eziphezulu zamandla.

I-laser resonator ye-VCSEL yenziwe nge-Bragg reflector (DBR) esasazwayo eyenziwe nge-multi-layer epitaxial structure yezinto ze-semiconductor kumacala omabini aphezulu nasezantsi ommandla osebenzayo, ohluke kakhululaseri-resonator yenziwe ngenqwelomoya eqhekezayo kwi-EEL. Ulwalathiso lwe-VCSEL optical resonator luyi-perpendicular kwi-chip surface, i-laser output nayo i-perpendicular kwi-chip surface, kwaye ukubonakala kwamacala omabini e-DBR kuphezulu kakhulu kune-EEL isisombululo sendiza.
Ubude be-laser resonator ye-VCSEL ngokuqhelekileyo i-microns ezimbalwa, ezincinci kakhulu kunezo ze-millimeter resonator ye-EEL, kwaye inzuzo yendlela enye efunyenwe yi-oscillation ye-optical field kwi-cavity iphantsi. Nangona imveliso yemowudi enqamlezayo esisiseko inokufezekiswa, amandla emveliso anokufikelela kuphela kwii-milliwatts ezininzi. Iprofayili yecandelo le-cross-section ye-VCSEL ye-laser ye-laser beam isetyhula, kwaye i-Angle ye-divergence incinci kakhulu kune-edge-emitting laser beam. Ukufezekisa ukukhutshwa kwamandla aphezulu e-VCSEL, kuyimfuneko ukwandisa ummandla okhanyayo ukubonelela ngenzuzo engaphezulu, kwaye ukwanda kommandla okhanyayo kuya kubangela ukuba i-laser ephumayo ibe yimveliso yeendlela ezininzi. Kwangaxeshanye, kunzima ukufezekisa inaliti yangoku efanayo kwindawo enkulu ekhanyayo, kwaye inaliti engalinganiyo yangoku iya kwandisa inkunkuma yokuqokelela ubushushu. Ngamafutshane, iVCSEL inokuvelisa imowudi esisiseko setyhula ye-symmetric indawo ngoyilo olufanelekileyo lwesakhiwo, kodwa amandla okuvelisa aphantsi xa imveliso ikwimo enye.Ngoko ke, iiVCsels ezininzi zihlala zidityaniswa kwimo yokuphuma.