Intshayelelo ye-Edge Emitting Laser (EEL)

Intshayelelo ye-Edge Emitting Laser (EEL)
Ukuze ufumane imveliso ye-laser ye-semiconductor yamandla aphezulu, itekhnoloji yangoku kukusebenzisa isakhiwo sokukhutshwa komda. I-resonator ye-edge-emitting semiconductor laser iqulunqwe ngumgangatho wendalo we-dissociation wekristale ye-semiconductor, kwaye i-beam ephumayo ikhutshwe kwi-front end ye-laser.I-edge-emission type semiconductor laser inokufikelela kwimveliso yamandla aphezulu, kodwa indawo yayo yokuphuma i-elliptical, umgangatho we-beam uhluphekile, kunye nenkqubo ye-beam idinga ukubunjwa kwe-beam.
Lo mzobo ulandelayo ubonisa ubume be-laser semiconductor laser edge-emitting. I-Optical cavity ye-EEL ihambelana nomphezulu we-chip ye-semiconductor kwaye ikhupha i-laser kumda we-chip ye-semiconductor, enokuqonda ukukhutshwa kwe-laser ngamandla aphezulu, isantya esiphezulu kunye nengxolo ephantsi. Nangona kunjalo, ukuphuma kwe-laser beam yi-EEL ngokubanzi ine-asymmetric beam cross section kunye nokwahlukana okukhulu kwe-angular, kunye nokusebenza kakuhle kokudibanisa kunye nefayibha okanye ezinye izinto ezibonakalayo ziphantsi.

Ukunyuswa kwamandla okuphuma kwe-EEL kukhawulelwe kukuqokelelwa kobushushu benkunkuma kwindawo esebenzayo kunye nomonakalo obonakalayo kumphezulu we-semiconductor. Ngokwandisa indawo waveguide ukunciphisa inkunkuma yokuqokelelana ubushushu kummandla esebenzayo ukuphucula ukuchithwa ubushushu, ukwandisa indawo imveliso ukukhanya ukunciphisa ingxinano amandla optical umqadi ukuphepha umonakalo optical, amandla imveliso ukuya kumakhulu aliqela milliwatts inokufezekiswa kwimowudi enye transverse isakhiwo waveguide.
Kwi-waveguide eyi-100mm, i-laser enye ekhupha umphetho inokufikelela kumashumi eewatts zamandla aphumayo, kodwa ngeli xesha i-waveguide ikwimowudi eninzi kakhulu kwinqwelomoya yechip, kwaye umyinge we-beam ephumayo ifikelela kwi-100: 1, ifuna inkqubo yokubumba umqadi.
Kwisiseko sokuba akukho mpumelelo entsha kwitekhnoloji yemathiriyeli kunye netekhnoloji yokukhula kwe-epitaxial, eyona ndlela iphambili yokuphucula amandla emveliso ye-semiconductor enye ye-laser chip kukwandisa ububanzi bomcu wengingqi ekhanyayo ye-chip. Nangona kunjalo, ukwandisa ububanzi be-strip buphezulu kakhulu kulula ukuvelisa i-oscillation yemowudi ephezulu enqamlezileyo kunye ne-filamentlike oscillation, eya kunciphisa kakhulu ukufana kwemveliso yokukhanya, kwaye amandla emveliso awanyuki ngokulinganayo kunye nobubanzi bomcu, ngoko ke amandla emveliso yetshiphu enye anqunyelwe kakhulu. Ukuze kuphuculwe kakhulu amandla emveliso, itekhnoloji yoluhlu iyavela. Itekhnoloji idibanisa iiyunithi ezininzi ze-laser kwi-substrate enye, ukwenzela ukuba iyunithi nganye ekhupha ukukhanya ifakwe njenge-dimensional array kwi-axis direction ecothayo, okoko nje iteknoloji yokuhlukanisa i-optical isolation isetyenziselwa ukwahlula iyunithi nganye ekhupha ukukhanya kuluhlu, ukwenzela ukuba bangaphazamisani omnye nomnye, ukwenza i-multi-aperture lasing, unokwandisa umbane wokukhanya odibeneyo ngokunyuka kweyunithi yokukhupha ukukhanya. Le chip ye-laser semiconductor yi-semiconductor laser array (LDA) chip, eyaziwa ngokuba yi-semiconductor laser bar.