Intshayelelo kwi-Edge Emitting Laser (EEL)

Intshayelelo kwi-Edge Emitting Laser (EEL)
Ukuze kufunyanwe imveliso yelaser ye-semiconductor enamandla aphezulu, iteknoloji yangoku kukusebenzisa isakhiwo sokukhupha umphetho. I-resonator yelaser ye-semiconductor ekhupha umphetho yenziwe ngumphezulu wendalo wekristale ye-semiconductor, kwaye umphetho womphumo ukhutshwa kwisiphelo esingaphambili selaser. Ilaser ye-semiconductor yohlobo lwe-edge-emission inokufikelela kwimveliso yamandla aphezulu, kodwa indawo yayo yokukhupha i-elliptical, umgangatho womphumo awulunganga, kwaye imo yomphetho kufuneka iguqulwe ngenkqubo yokubumba umphetho.
Lo mzobo ulandelayo ubonisa ulwakhiwo lwelaser ye-semiconductor ekhupha umphetho. Umngxuma we-optical we-EEL uhambelana nomphezulu we-chip ye-semiconductor kwaye ukhupha i-laser kumphetho we-chip ye-semiconductor, enokwenza i-laser iphume ngamandla aphezulu, ngesantya esiphezulu nangengxolo ephantsi. Nangona kunjalo, i-laser beam output yi-EEL ngokubanzi ine-cross section ye-beam engalinganiyo kunye ne-angular divergence enkulu, kwaye ukusebenza kakuhle kokudibanisa ne-fiber okanye ezinye izinto ze-optical kuphantsi.

Ukwanda kwamandla okukhupha i-EEL kuthintelwe kukuqokelelwa kobushushu benkunkuma kwindawo esebenzayo kunye nomonakalo we-optical kumphezulu we-semiconductor. Ngokwandisa indawo ye-waveguide ukunciphisa ukuqokelelwa kobushushu benkunkuma kwindawo esebenzayo ukuphucula ukusasazwa kobushushu, ukwandisa indawo yokukhupha ukukhanya ukunciphisa uxinano lwamandla okukhanya e-beam ukuze kuthintelwe umonakalo we-optical, amandla okukhupha ukuya kuthi ga kumakhulu aliqela e-milliwatts anokufezekiswa kwisakhiwo se-waveguide ye-single transverse mode.
Kwi-waveguide ye-100mm, i-laser enye ekhupha umphetho inokufikelela kumashumi ee-watts zamandla okukhupha, kodwa ngeli xesha i-waveguide inemodi ezininzi kakhulu kwi-plane ye-chip, kwaye umlinganiselo womda wokukhupha ufikelela kwi-100:1, nto leyo efuna inkqubo yokubumba umqadi ontsonkothileyo.
Ngenxa yokuba akukho nkqubela intsha kwitekhnoloji yezinto ezibonakalayo kunye netekhnoloji yokukhula kwe-epitaxial, indlela ephambili yokuphucula amandla okukhupha e-single semiconductor laser chip kukwandisa ububanzi be-strip yendawo ekhanyayo ye-chip. Nangona kunjalo, ukwandisa ububanzi be-strip phezulu kakhulu kulula ukuvelisa i-transverse high-order mode oscillation kunye ne-filamentlike oscillation, eya kunciphisa kakhulu ukufana kokuphuma kokukhanya, kwaye amandla okukhupha awandi ngokulinganayo nobubanzi be-strip, ngoko ke amandla okukhupha e-single chip anqongophele kakhulu. Ukuze kuphuculwe kakhulu amandla okukhupha, itekhnoloji ye-array iyavela. Le teknoloji idibanisa iiyunithi ezininzi ze-laser kwi-substrate efanayo, ukuze iyunithi nganye ekhupha ukukhanya ibekwe njenge-array enemilinganiselo enye kwicala le-axis elicothayo, lo gama nje itekhnoloji yokwahlukanisa i-optical isetyenziselwa ukwahlula iyunithi nganye ekhupha ukukhanya kwi-array, ukuze zingaphazamisani, zenze i-multi-aperture lasing, unganyusa amandla okukhupha e-chip yonke ngokwandisa inani leeyunithi ezikhupha ukukhanya ezidibeneyo. Le chip yelaser ye-semiconductor yitship yelaser array ye-semiconductor (LDA), eyaziwa ngokuba yi-semiconductor laser bar.