YazisaInGaAs ifotodetector
I-InGaAs yenye yezinto ezifanelekileyo zokufezekisa impendulo ephezulu kunyei-photodetector enesantya esiphezulu. Okokuqala, i-InGaAs yimpahla ye-semiconductor ye-bandgap ethe ngqo, kwaye ububanzi bayo be-bandgap bunokulawulwa ngumlinganiselo phakathi kwe-In kunye ne-Ga, eyenza ukufunyanwa kwemiqondiso ye-optical ye-wavelengths eyahlukeneyo. Phakathi kwabo, i-In0.53Ga0.47As ihambelana ngokugqibeleleyo ne-InP substrate lattice kwaye ine-coefficient yokukhanya okuphezulu kakhulu kwibhendi yonxibelelwano lwe-optical. Yeyona isetyenziswa kakhulu ekulungiseleleniifotodetectorkwaye inowona msebenzi ubalaseleyo wangoku obumnyama kunye nokuphendula. Okwesibini, zombini ii-InGaAs kunye nemathiriyeli ye-InP zinezantya ze-electron zokukhukuliseka eziphezulu, kunye nezantya zazo ze-electron zokukhukuliseka zombini ziphantse zibe yi-1×107cm/s. Okwangoku, phantsi kweendawo ezithile zombane, i-InGaAs kunye ne-InP izixhobo zibonisa iziphumo ze-electron velocity overshoot, kunye ne-overshoot velocities yazo zifikelela kwi-4 × 107cm / s kunye ne-6 × 107cm / s ngokulandelanayo. Kuyanceda ukufezekisa i-bandwidth ephezulu yokuwela. Okwangoku, ii-InGaAs photodetectors yeyona nto iphambili yokufota kunxibelelwano lwamehlo. Kwimarike, indlela yokudibanisa i-surface-incident ixhaphake kakhulu. Iimveliso ze-surface-incident detector kunye ne-25 Gaud / s kunye ne-56 Gaud / s ingaba sele iveliswe ngobuninzi. Ubungakanani obuncinci, okwenzeka ngasemva, kunye ne-high-bandwidth surface-incident detectors nazo ziphuhlisiwe, ngokukodwa kwizicelo ezifana nesantya esiphezulu kunye nokugcwala okuphezulu. Nangona kunjalo, ngenxa yokulinganiselwa kweendlela zabo zokudibanisa, ii-detectors zeziganeko ezingaphezulu kunzima ukudibanisa nezinye izixhobo ze-optoelectronic. Ke ngoko, ngokunyuka kwemfuno yokudityaniswa kwe-optoelectronic, i-waveguide edityaniswe ne-InGaAs photodetectors esebenza ngokugqwesileyo kwaye ilungele ukudityaniswa ngokuthe ngcembe ibe yinto ekugxilwe kuyo kuphando. Phakathi kwazo, iimodyuli ze-InGaAs ze-photodetector ze-70GHz kunye ne-110GHz phantse zonke zamkela izakhiwo zokudibanisa i-waveguide. Ngokomahluko kwizixhobo ze-substrate, i-waveguide edityaniswe ne-InGaAs photodetectors inokwahlulwa ikakhulu ibe ziindidi ezimbini: INP-based kunye ne-Si-based. I-epitaxial yezinto eziphathekayo kwi-substrates ye-InP inomgangatho ophezulu kwaye ifaneleke ngakumbi ukuveliswa kwezixhobo zokusebenza eziphezulu. Nangona kunjalo, kwizixhobo zeqela le-III-V ezikhuliswe okanye ezibotshelelwe kwii-substrates ze-Si, ngenxa yokungahambelani okwahlukeneyo phakathi kwemathiriyeli ye-InGaAs kunye nee-substrates ze-Si, imathiriyeli okanye umgangatho wojongano ukumgangatho ophantsi, kwaye kusekho indawo enkulu yokuphucula ukusebenza kwezixhobo.
Ukuzinza kwe-photodetector kwiindawo ezahlukeneyo zesicelo, ngakumbi phantsi kweemeko ezigqithisileyo, nayo enye yezinto eziphambili kwizicelo eziphathekayo. Kwiminyaka yakutshanje, iintlobo ezintsha ze-detectors ezifana ne-perovskite, izinto eziphilayo kunye ne-dimensional-dimensional materials, eziye zatsala ingqalelo enkulu, zisajongene nemingeni emininzi ngokubhekiselele kuzinzo lwexesha elide ngenxa yokuba izinto ngokwazo zichaphazeleka lula kwizinto ezisingqongileyo. Okwangoku, inkqubo yokudityaniswa kwezinto ezitsha ayikavuthwa, kwaye ukuphononongwa okungakumbi kusafuneka kwimveliso enkulu kunye nokuhambelana nokusebenza.
Nangona ukuqaliswa kwee-inductors kunokunyusa ngokufanelekileyo i-bandwidth yezixhobo okwangoku, ayidumi kwiinkqubo zonxibelelwano lwedijithali. Ngoko ke, indlela yokuphepha iimpembelelo ezingalunganga zokunciphisa ngakumbi iiparamitha ze-RC ye-parasitic yesixhobo yenye yezalathiso zophando lwe-photodetector ye-high-speed. Okwesibini, njengoko i-bandwidth ye-waveguide edityanisiweyo yeefoto ziqhubeka zisanda, umqobo phakathi kwe-bandwidth kunye nokuphendula uqala ukuvela kwakhona. Nangona i-Ge/Si photodetectors kunye ne-InGaAs photodetector ene-3dB bandwidth edlula i-200GHz ziye zabikwa, uxanduva lwabo alwanelisi. Indlela yokunyusa i-bandwidth ngelixa ugcina ukuphendula okulungileyo kuyisihloko esibalulekileyo sophando, esinokufuna ukuqaliswa kwezinto ezintsha ezihambelanayo zenkqubo (ukuhamba okuphezulu kunye ne-coefficient ephezulu yokufunxa) okanye inoveli yezakhiwo zesixhobo esinesantya esiphezulu sokusombulula. Ukongeza, njengoko i-bandwidth yesixhobo isanda, iimeko zosetyenziso lwee-detectors kwiikhonkco ze-microwave photonic ziya kunyuka ngokuthe ngcembe. Ngokungafaniyo nesiganeko esincinci samandla okukhanya kunye nokufumanisa uvakalelo oluphezulu kunxibelelwano lwe-optical, le meko, ngesiseko se-bandwidth ephezulu, inesidingo esikhulu samandla saturation kwiziganeko zamandla aphezulu. Nangona kunjalo, izixhobo eziphezulu ze-bandwidth zihlala zithatha izakhiwo ezinobungakanani obuncinci, ngoko akulula ukwenza ii-photodetectors ze-high-speed kunye ne-high-saturation-power saturation, kunye nokunye okutsha kunokufuneka kwi-carrier extraction kunye nokutshatyalaliswa kobushushu bezixhobo. Okokugqibela, ukunciphisa umsinga omnyama wee-detectors ezinesantya esiphezulu kuhlala kuyingxaki ekufuneka isonjululwe zii-photodetectors ezine-lattice mismatch. Ubumnyama bangoku bunxulumene ikakhulu nomgangatho wekristale kunye nomgangatho wezinto ezibonakalayo. Ngoko ke, iinkqubo eziphambili ezifana ne-heteroepitaxy ephezulu okanye i-bonding phantsi kwe-lattice mismatch systems ifuna uphando olongezelelweyo kunye notyalo-mali.
Ixesha lokuposa: Aug-20-2025