Iifotodetectors zesantya esiphezulu ziziswa ziifotodetectors ze-InGaAs

Iifoto-detectors ezikhawulezayo ziziswa yiIzixhobo zokubona iifoto ze-InGaAs

Izixhobo zokubona iifoto ezikhawulezayokwicandelo lonxibelelwano lwe-optical, ikakhulu ziquka ii-III-V InGaAs photodetectors kunye ne-IV full Si kunye ne-Ge/Iifotodetectors zeSi. Eyokuqala yi-regulator yendabuko ekufutshane ne-infrared, ebisoloko ilawula ixesha elide, ngelixa eyesibini ixhomekeke kubuchwepheshe be-silicon optical ukuze ibe yinkwenkwezi ekhulayo, kwaye yindawo eshushu kwicandelo lophando lwamazwe ngamazwe lwe-optoelectronics kwiminyaka yakutshanje. Ukongeza, ii-detectors ezintsha ezisekelwe kwi-perovskite, izinto eziphilayo kunye nezinto ezinemilinganiselo emibini ziphuhla ngokukhawuleza ngenxa yeenzuzo zokucutshungulwa okulula, ukuguquguquka okuhle kunye neepropati ezihlengahlengiswayo. Kukho umahluko omkhulu phakathi kwezi zi-detectors zintsha kunye nee-photodetectors zemveli ze-inorganic kwiimpawu zezinto kunye neenkqubo zokuvelisa. Ii-detectors ze-Perovskite zineempawu ezintle zokufunxa ukukhanya kunye nomthamo wokuthutha itshaja osebenzayo, ii-detectors zezinto eziphilayo zisetyenziswa kakhulu kwii-electron zazo ezingabizi kakhulu kunye neziguquguqukayo, kwaye ii-detectors zezinto ezinemilinganiselo emibini zitsale ingqalelo enkulu ngenxa yeempawu zazo zomzimba ezizodwa kunye nokuhamba okuphezulu kokuthwala. Nangona kunjalo, xa kuthelekiswa nee-detectors ze-InGaAs kunye ne-Si/Ge, ii-detectors ezintsha zisafuna ukuphuculwa ngokubhekiselele kuzinzo lwexesha elide, ukuvuthwa kokuvelisa kunye nokuhlanganiswa.

I-InGaAs yenye yezona zinto zifanelekileyo zokufumana ii-photodetectors ezikhawulezayo neziphendula ngokukhawuleza. Okokuqala, i-InGaAs yinto ye-bandgap semiconductor ethe ngqo, kwaye ububanzi bayo be-bandgap bunokulawulwa ngumlinganiselo ophakathi kwe-In kunye ne-Ga ukuze kufunyanwe imiqondiso ye-optical yee-wavelengths ezahlukeneyo. Phakathi kwazo, i-In0.53Ga0.47As ihambelana ngokugqibeleleyo ne-substrate lattice ye-InP, kwaye ine-coefficient enkulu yokufunxa ukukhanya kwi-optical communication band, eyona isetyenziswa kakhulu ekulungiseleleniii-photodetectors, kwaye ukusebenza kombane omnyama kunye nokuphendula kakuhle nako zezona zibalaseleyo. Okwesibini, izixhobo ze-InGaAs kunye ne-InP zombini zinesantya esiphezulu sokuhamba kwee-electron, kwaye isantya sazo sokuhamba kwee-electron ezigcweleyo simalunga ne-1 × 107 cm/s. Kwangaxeshanye, izixhobo ze-InGaAs kunye ne-InP zinesiphumo sokuhamba kwee-electron phantsi kwentsimi ethile yombane. Isantya sokuhamba ngaphezulu singahlulwa sibe yi-4 × 107cm/s kunye ne-6 × 107cm/s, nto leyo enceda ekufezekiseni i-bandwidth enkulu yexesha elimiselweyo. Okwangoku, i-InGaAs photodetector yeyona photodetector iphambili yonxibelelwano lwe-optical, kwaye indlela yokudibanisa i-surface incidence isetyenziswa kakhulu kwimarike, kwaye iimveliso ze-25 Gbaud/s kunye ne-56 Gbaud/s surface incidence detectors nazo ziye zaphuhliswa, ezilungele kakhulu ukusetyenziswa kwesantya esiphezulu kunye ne-high saturation. Nangona kunjalo, i-surface incidence probe inqunyelwe yimo yayo yokudibanisa kwaye kunzima ukuyidibanisa nezinye izixhobo ze-optoelectronic. Ngoko ke, ngokuphuculwa kweemfuno zokudibanisa i-optoelectronic, ii-photodetectors ze-InGaAs ezidityaniswe ne-waveguide ezinentsebenzo egqwesileyo kwaye ezifanelekileyo ukuhlanganiswa ziye zaba yindawo ephambili yophando, phakathi kwazo iimodyuli ze-photoprobe ze-InGaAs zentengiso ze-70 GHz kunye ne-110 GHz phantse zonke zisebenzisa izakhiwo ezidityaniswe ne-waveguide. Ngokwezixhobo ezahlukeneyo ze-substrate, i-waveguide coupling InGaAs photoelectric probe inokwahlulwa ibe ziindidi ezimbini: i-InP kunye ne-Si. Izinto ze-epitaxial kwi-substrate ye-InP zinomgangatho ophezulu kwaye zifanelekile ngakumbi ekulungiseleleni izixhobo ezisebenza kakhulu. Nangona kunjalo, ukungafani okuhlukeneyo phakathi kwezinto ze-III-V, izinto ze-InGaAs kunye ne-Si substrates ezikhuliswe okanye ezibotshelelwe kwi-Si substrates kukhokelela kumgangatho wezinto okanye ujongano olubi, kwaye ukusebenza kwesixhobo kusenendawo enkulu yokuphucula.

Iifoto detectors ze-InGaAs, Iifoto detectors ezikhawulezayo, iifoto detectors, iifoto detectors eziphendula ngokukhawuleza, unxibelelwano lwe-optical, izixhobo ze-optoelectronic, iteknoloji ye-silicon optical


Ixesha leposi: Disemba-31-2024