Isixhobo sokubona ifoto esiqhutywa yi-infrared esisebenza ngokwaso

Uziqhuba ngokwakhe ngokuzisebenzela okuphezuluisixhobo sokubona iifoto se-infrared

 

i-infraredisixhobo sokubona iifotoineempawu zokuba namandla okulwa nokuphazamiseka, amandla okubona iithagethi aqinileyo, ukusebenza kakuhle kuzo zonke iimeko zemozulu kunye nokufihla kakuhle. Idlala indima ebaluleke ngakumbi kwiinkalo ezifana nezonyango, ezomkhosi, iteknoloji yasemajukujukwini kunye nobunjineli bokusingqongileyo. Phakathi kwazo, ukuzilawula ngokwakoukufunyanwa kwe-photoelectricItshiphusi enokusebenza ngokuzimeleyo ngaphandle kombane owongezelelweyo wangaphandle itsale ingqalelo enkulu kwicandelo lokufunyanwa kwe-infrared ngenxa yokusebenza kwayo okwahlukileyo (njengokuzimela kwamandla, uvakalelo oluphezulu kunye nozinzo, njl.njl.). Ngokwahlukileyo koko, iitshiphusi zemveli zokufumanisa i-photoelectric, ezifana neetshiphusi ze-infrared ezisekwe kwi-silicon okanye i-narrowbandgap semiconductor, azifuni nje kuphela ii-voltages ezongezelelweyo ze-bias ukuqhuba ukwahlukana kwezithuthi eziveliswe yi-photo ukuze kuveliswe i-photocurrents, kodwa zikwafuna neenkqubo zokupholisa ezongezelelweyo ukunciphisa ingxolo yobushushu kunye nokuphucula ukuphendula. Ke ngoko, kuye kwaba nzima ukuhlangabezana neengcamango ezintsha kunye neemfuno zesizukulwana esilandelayo seetshiphusi zokufumanisa i-infrared kwixesha elizayo, njengokusetyenziswa kwamandla aphantsi, ubungakanani obuncinci, iindleko eziphantsi kunye nokusebenza okuphezulu.

 

Kutshanje, amaqela ophando aseTshayina naseSweden acebise i-chip entsha ye-pin heterojunction self-driven short-wave infrared (SWIR) photoelectric detection chip esekelwe kwiifilimu ze-graphene nanoribbon (GNR)/alumina/single crystal silicon. Phantsi kwesiphumo esidibeneyo se-optical gating effect esibangelwa yi-interface eyahlukeneyo kunye nentsimi yombane eyakhelwe ngaphakathi, i-chip ibonise impendulo ephezulu kakhulu kunye nokusebenza kokufumanisa kwi-zero bias voltage. I-chip ye-photoelectric detection ine-A response rate ephezulu njenge-75.3 A/W kwimo yokuziqhuba, izinga lokufumanisa le-7.5 × 10¹⁴ Jones, kunye nokusebenza kakuhle kwe-quantum yangaphandle kufutshane ne-104%, okuphucula ukusebenza kokufumanisa kohlobo olufanayo lwee-chips ezisekelwe kwi-silicon ngerekhodi ye-7 orders yobukhulu. Ukongeza, phantsi kwemo ye-drive eqhelekileyo, izinga lokuphendula le-chip, izinga lokufumanisa, kunye nokusebenza kakuhle kwe-quantum yangaphandle konke kuphezulu njenge-843 A/W, 10¹⁵ Jones, kunye ne-105% ngokwahlukeneyo, zonke ezi zezona xabiso ziphezulu ezixeliweyo kuphando lwangoku. Okwangoku, olu phando lukwabonise ukusetyenziswa kwe-chip yokubona i-photoelectric kwicandelo lonxibelelwano lwe-optical kunye ne-infrared imaging, nto leyo egxininisa amandla ayo amakhulu okusetyenziswa.

 

Ukuze kufundwe ngokucwangcisiweyo ukusebenza kwe-photoelectric ye-photodetector ngokusekelwe kwi-graphene nanoribbons /Al₂O₃/ single crystal silicon, abaphandi bavavanye i-static (current-voltage current) kunye neempendulo zayo ze-dynamic characteristic (current-time current). Ukuze bavavanye ngokucwangcisiweyo iimpawu ze-optical response ze-graphene nanoribbon /Al₂O₃/ monocrystalline silicon heterostructure photodetector phantsi kwee-voltages ezahlukeneyo ze-bias, abaphandi balinganise impendulo ye-dynamic current yesixhobo kwi-0 V, -1 V, -3 V kunye ne-5 V biases, kunye ne-optical power density ye-8.15 μW/cm². I-photocurrent iyanda nge-reverse bias kwaye ibonisa isantya sempendulo ekhawulezayo kuzo zonke ii-voltage ze-bias.

 

Ekugqibeleni, abaphandi benze inkqubo yokufota kwaye baphumelele ekufumaneni imifanekiso eqhutywa ngamandla abo ye-short-wave infrared. Le nkqubo isebenza phantsi kwe-zero bias kwaye ayinayo nayiphi na indlela yokusebenzisa amandla. Amandla okufota e-photodetector avavanywe kusetyenziswa imaski emnyama enobumba "T" pattern (njengoko kubonisiwe kuMfanekiso 1).

Ukuqukumbela, olu phando luphumelele ekuyileni ii-photodetectors ezizisebenzisa ngokwazo ezisekelwe kwii-nanoribhoni ze-graphene kwaye lwafumana izinga eliphezulu lokuphendula eliphula irekhodi. Okwangoku, abaphandi babonise ngempumelelo amandla okunxibelelana nokufota kwale nto.isixhobo sokubona iifoto esiphendula kakhuluLe mpumelelo yophando ayiboneleli nje kuphela ngendlela esebenzayo yophuhliso lwee-nanoribhoni ze-graphene kunye nezixhobo ze-optoelectronic ezisekelwe kwi-silicon, kodwa ikwabonisa ukusebenza kwazo okugqwesileyo njengee-short-wave infrared photodetectors ezizisebenzisa ngokwazo.


Ixesha leposi: Epreli-28-2025