Isixhobo sokujonga ifoto esebenza nge-infrared esebenza ngokuphezulu

Ukusebenza okuphezulu okuziqhubayoi-infrared photodetector

i-infraredifotodetectorineempawu zesakhono esinamandla sokuchasana nokuphazamiseka, isakhono esinamandla sokuqaphela injongo, ukusebenza kwemozulu yonke kunye nokufihla okulungileyo. Idlala indima ebalulekileyo kwiinkalo ezifana nezamayeza, umkhosi, ubuchwepheshe basemajukujukwini kunye nobunjineli bokusingqongileyo. Phakathi kwabo, eziqhutywayoukubonwa kombanei-chip enokuthi isebenze ngokuzimeleyo ngaphandle kokunikezelwa kwamandla ongezelelweyo angaphandle iye yatsala ingqwalasela ebanzi kwintsimi yokubona i-infrared ngenxa yentsebenzo yayo ekhethekileyo (njengokuzimela kwamandla, uvakalelo oluphezulu kunye nokuzinza, njl.). Ngokwahlukileyo, iitshiphusi zemveli zokubona umbane wefoto, ezinje ngesilicon-based okanye i-narrowbandgap semiconductor-based chips infrared, ayifuni kuphela iivoltages ezongezelelweyo zokuqhuba ulwahlulo lwabathwali beefoto ukuvelisa ii-photocurrents, kodwa zifuna iinkqubo zokupholisa ezongezelelweyo ukunciphisa ingxolo yobushushu kunye nokuphucula ukuphendula. Ngoko ke, kuye kwaba nzima ukuhlangabezana neengcamango ezintsha kunye neemfuno zesizukulwana esilandelayo se-chips zokubona i-infrared kwixesha elizayo, njengokusetyenziswa kwamandla aphantsi, ubungakanani obuncinci, ixabiso eliphantsi kunye nokusebenza okuphezulu.

Kutshanje, amaqela ophando asuka e-China nase-Sweden acebise i-novel pin heterojunction self-driven short-wave infrared (SWIR) photoelectric monitor chip esekwe kwigraphene nanoribbon (GNR) films/alumina/single crystal silicon. Ngaphantsi kwesiphumo esidityanisiweyo sempembelelo ye-optical gating ebangelwa yi-interface engafaniyo kunye nentsimi yombane eyakhelweyo, i-chip ibonise impendulo ephezulu kakhulu kunye nokusebenza kokufumanisa kwi-voltage ye-bias ye-zero. I-chip ye-photoelectric yokufumanisa i-photoelectric inomlinganiselo wokuphendula ophezulu njenge-75.3 A / W kwimodi yokuzimela, izinga lokufumanisa i-7.5 × 10¹⁴ Jones, kunye ne-quantum yangaphandle esebenza kakuhle kufuphi ne-104%, ukuphucula ukusebenza kokufumanisa uhlobo olufanayo lwe-silicon-based chips ngerekhodi ye-7 imiyalelo yobukhulu. Ukongezelela, phantsi kwemodi yesiqhelo yokuqhuba, izinga lempendulo ye-chip, izinga lokubona, kunye nokusebenza kwe-quantum yangaphandle yonke iphezulu njenge-843 A / W, 10¹⁵ Jones, kunye ne-105% ngokulandelanayo, zonke ezo zixabiso eziphezulu ezichazwe kuphando lwangoku. Okwangoku, olu phando luye lwabonisa usetyenziso lwehlabathi lokwenyani lwe-chip yokukhangela i-photoelectric kwimimandla yonxibelelwano lwe-optical kunye ne-infrared imaging, ebonisa amandla ayo amakhulu okusebenza.

Ukuze ufunde ngokucwangcisiweyo ukusebenza kwe-photoelectric ye-photodetector esekelwe kwi-graphene nanoribbons / Al₂O₃/ i-silicon eyodwa ye-crystal, abaphandi bavavanya i-static (i-current-voltage curve) kunye neempendulo zeempawu eziguqukayo (i-curve-time curve). Ukuphonononga ngokucwangcisiweyo iimpawu zokuphendula zegraphene nanoribbon /Al₂O₃/ monocrystalline silicon heterostructure photodetector phantsi kweevoltages ezahlukeneyo ze-bias, abaphandi balinganise impendulo yangoku yesixhobo ku-0 V, -1 V, -3 V kunye -5 V kunye nokuthambekela kwe-V, ngamandla optical density of μ.15 ²W8cm. I-photocurrent iyanda kunye ne-bias ebuyela umva kwaye ibonisa isantya sokuphendula ngokukhawuleza kuzo zonke i-bias voltages.

Ekugqibeleni, abaphandi benza inkqubo yokucinga kwaye baphumelele ngempumelelo i-self-powered imaging ye-short-wave infrared. Inkqubo isebenza phantsi kwe-zero bias kwaye ayisebenzisi amandla konke konke. Ikhono lokucinga le-photodetector lihlolwe ngokusebenzisa imaski emnyama enobumba "T" iphethini (njengoko kuboniswe kuMfanekiso 1).

Ukuqukumbela, olu phando lwenze ngempumelelo ii-photodetectors ezisebenza ngokuzimeleyo ezisekwe kwigraphene nanoribbons kwaye zafumana ireyithi yokuphendula irekhodi ephezulu. Okwangoku, abaphandi babonise ngempumelelo unxibelelwano lwamehlo kunye nobuchule bokucinga okuifotodetector esabela kakhulu. Le mpumelelo yophando ayinikezeli kuphela indlela esebenzayo yophuhliso lwegraphene nanoribbons kunye nesilicon-based optoelectronic izixhobo, kodwa ikwabonisa ukusebenza kwabo okugqwesileyo njenge-self-powered short-wave photodetectors infrared.