Ukukhetha Umthombo WeLaser Ofanelekileyo: I-Edge Emission Semiconductor Laser Icandelo Lesibini

Ukukhetha OkufanelekileyoUmthombo weLaserUkukhutshwa koMdaI-Laser ye-semiconductorInxalenye yesiBini

4. Imeko yesicelo se-edge-emission semiconductor lasers
Ngenxa yobubanzi bayo obude kunye namandla aphezulu, iilaser ze-semiconductor ezikhupha umphetho zisetyenziswe ngempumelelo kwiindawo ezininzi ezifana neemoto, unxibelelwano lwe-optical kunyeilezaunyango lwezonyango. Ngokutsho kweYole Developpement, iarhente yophando lwemarike edumileyo kwihlabathi liphela, imakethi yelaser enomda wokukhupha iza kukhula iye kwi-$7.4 yeebhiliyoni ngo-2027, kunye nezinga lokukhula lonyaka elihlanganisiweyo le-13%. Olu kukhula luza kuqhubeka luqhutywa lunxibelelwano lwe-optical, olufana neemodyuli ze-optical, ii-amplifier, kunye nezicelo ze-3D zokunxibelelana kwedatha kunye nonxibelelwano ngefowuni. Kwiimfuno ezahlukeneyo zesicelo, izicwangciso ezahlukeneyo zoyilo lwesakhiwo se-EEL ziye zaphuhliswa kushishino, kubandakanya: iilaser ze-semiconductor zeFabripero (FP), iilaser ze-semiconductor zeDistributed Bragg Reflector (DBR), iilaser ze-semiconductor ze-external cavity laser (ECL), iilaser ze-semiconductor ezisasazwe ngempendulo (I-laser ye-DFB), ii-quantum cascade semiconductor lasers (QCL), kunye nee-wide area laser diodes (BALD).

Ngenxa yokwanda kwemfuno yonxibelelwano lwe-optical, izicelo ze-3D sensing kunye nezinye iinkalo, imfuno yeeleser ze-semiconductor nayo iyanda. Ukongeza, iileser ze-semiconductor ezikhupha imiphetho kunye neeleser ze-semiconductor ezikhupha imiphetho engaphezulu nazo zidlala indima ekuzaliseni iintsilelo zomnye nomnye kwizicelo ezintsha, ezinje:
(1) Kwicandelo lonxibelelwano lwe-optical, i-1550 nm InGaAsP/InP Distributed Feedback ((DFB laser) EEL kunye ne-1300 nm InGaAsP/InGaP Fabry Pero EEL zisetyenziswa rhoqo kumgama wokudlulisela we-2 km ukuya kwi-40 km kwaye amazinga okudlulisela afikelela kwi-40 Gbps. Nangona kunjalo, kumgama wokudlulisela we-60 m ukuya kwi-300 m kunye nesantya sokudlulisela esiphantsi, ii-VCsel ezisekelwe kwi-850 nm InGaAs kunye ne-AlGaAs ziphambili.
(2) Iileyiza ezikhupha umphezulu ezikwindawo ethe nkqo zineengenelo zobukhulu obuncinci kunye nobude obuncinci bomda, ngoko ke zisetyenziswa kakhulu kwimarike yezixhobo ze-elektroniki zabathengi, kwaye iingenelo zokukhanya kunye namandla eeleyiza ze-semiconductor ezikhupha umphetho zivula indlela yezicelo zokubona kude kunye nokusebenza ngamandla aphezulu.
(3) Zombini iilaser ze-semiconductor ezikhupha umphetho kunye neelaser ze-semiconductor ezikhupha umphezulu othe nkqo zingasetyenziselwa i-liDAR emfutshane kunye nephakathi ukufezekisa izicelo ezithile ezifana nokufumanisa indawo engabonakaliyo kunye nokuhamba kwendlela.

5. Uphuhliso lwexesha elizayo
I-laser ye-semiconductor ekhupha imiphetho ineengenelo zokuthembeka okuphezulu, i-miniaturization kunye noxinano olukhulu lwamandla akhanyayo, kwaye inamathuba amaninzi okusetyenziswa kunxibelelwano lwe-optical, i-liDAR, ezonyango nakwezinye iindawo. Nangona kunjalo, nangona inkqubo yokuvelisa i-laser ye-semiconductor ekhupha imiphetho iye yakhula, ukuze kuhlangatyezwane nemfuno ekhulayo yeemarike zoshishino kunye nabathengi be-laser ye-semiconductor ekhupha imiphetho, kuyimfuneko ukuphucula itekhnoloji, inkqubo, ukusebenza kunye nezinye iinkalo ze-laser ye-semiconductor ekhupha imiphetho, kubandakanya: ukunciphisa uxinano lwesiphene ngaphakathi kwe-wafer; Ukunciphisa iinkqubo zenkqubo; Ukuphuhlisa ubuchwepheshe obutsha bokutshintsha iinkqubo zokusika ivili lokusila kunye ne-blade wafer ezinokuthi zingenise iziphene; Ukuphucula ulwakhiwo lwe-epitaxial ukuphucula ukusebenza kakuhle kwe-laser ekhupha imiphetho; Ukunciphisa iindleko zokuvelisa, njl. Ukongeza, ngenxa yokuba ukukhanya kwemveliso ye-laser ekhupha imiphetho kusecaleni kwe-laser chip ye-semiconductor, kunzima ukufikelela ekupakishweni kwe-chip encinci, ngoko ke inkqubo yokupakisha enxulumene nayo isafuna ukucaciswa ngakumbi.