Ukukhetha uMthombo weLaser oLungileyo: I-Edge Emission Semiconductor Laser Icandelo leSibini

Ukukhetha OkulungileyoUmthombo weLaser: Ukukhutshwa komdaSemiconductor LaserIcandelo lesiBini

4. Ubume besicelo se-edge-emission semiconductor lasers
Ngenxa yoluhlu olubanzi lwamaza kunye namandla aphezulu, i-laser ye-semiconductor ephuma ecaleni isetyenziswe ngempumelelo kwiinkalo ezininzi ezinje ngeemoto, unxibelelwano lwamehlo kunye.laserunyango lwezonyango. NgokukaYole Developpement, iarhente yophando lwemarike eyaziwayo kumazwe ngamazwe, imakethi ye-laser edge-to-emit iyakukhula iye kwi-7.4 yeebhiliyoni zeedola ngo-2027, ngesantya sokukhula sonyaka esiyi-13%. Olu hlumo luya kuqhubeka luqhutywa lunxibelelwano lwe-optical, njengeemodyuli ze-optical, i-amplifiers, kunye ne-3D yokubona izicelo zonxibelelwano lwedatha kunye nonxibelelwano. Kwiimfuno ezahlukeneyo zesicelo, izicwangciso ze-EEL zoyilo ezahlukeneyo zoyilo ziye zaphuhliswa kwishishini, kubandakanywa: i-Fabripero (FP) i-semiconductor lasers, i-Distributed Bragg Reflector (DBR) i-semiconductor lasers, i-external cavity laser (ECL) i-semiconductor lasers, i-laser ye-semiconductor ehambisa ingxelo (DFB laser), i-quantum cascade semiconductor lasers (QCL), kunye ne-wide area laser diodes (BALD).

Ngokunyuka kwemfuno yonxibelelwano lwamehlo, usetyenziso lokuva i-3D kunye nezinye iindawo, imfuno ye-lasemiconductor lasers nayo iyanda. Ukongeza, ii-laser ze-semiconductor eziphuma emphethweni kunye ne-laser-cavity surface-emitting semiconductor lasers nazo zidlala indima ekuzaliseni iziphene zomnye kwizicelo ezivelayo, ezinje:
(1) Kwinkalo yonxibelelwano lwe-optical, i-1550 nm InGaAsP/InP Distributed Feedback ( (DFB laser) EEL kunye ne-1300 nm InGaAsP/InGaP Fabry Pero EEL ziqhele ukusetyenziswa kumgama wothumelo we-2 km ukuya kwi-40 km kunye namazinga othumelo ukuya kuthi ga. I-40 Gbps Nangona kunjalo, kwi-60 m ukuya kwi-300 m yokuhambisa imigama kunye nesantya esisezantsi sokuhambisa, i-VCsels esekelwe kwi-850 nm InGaAs kunye ne-AlGaAs zilawula.
(2) Iilaser ezikhupha umphezulu othe nkqo zineengenelo zobungakanani obuncinci kunye nobude obumxinwa, ke ngoko ziye zisetyenziswa ngokubanzi kwimarike yomthengi wombane, kwaye ukuqaqamba kunye namandla aluncedo eedge ephumayo semiconductor lasers kuhlahlel indlela yezicelo zokuvalelwa kude kwaye ukusetyenzwa kwamandla aphezulu.
(3) Zombini i-laser ye-semiconductor ephuma emphethweni kunye ne-laser ye-semiconductor ye-semiconductor emileyo ingasetyenziselwa ixesha elifutshane - kunye ne-medium-range ye-liDAR ukufezekisa izicelo ezithile ezifana nokufunyanwa kwendawo engaboniyo kunye nokuhamba kwendlela.

5. Uphuhliso lwexesha elizayo
I-laser edge edge semiconductor laser ineenzuzo zokuthembeka okuphezulu, i-miniaturization kunye nokuxinana kwamandla okukhanya okuphezulu, kwaye inamathuba okusebenza okubanzi kunxibelelwano lwe-optical, i-liDAR, unyango kunye nezinye iinkalo. Nangona kunjalo, nangona inkqubo yokwenziwa kwe-laser ye-semiconductor ephuma ecaleni sele ikhulile, ukuze kuhlangatyezwane nemfuno ekhulayo yeemarike zamashishini kunye nabathengi kwii-laser ze-semiconductor ezikhupha umda, kuyafuneka ukuqhubeka nokwandisa itekhnoloji, inkqubo, ukusebenza kunye nezinye. imiba ye-edge-emitting semiconductor lasers, kubandakanywa: ukunciphisa ubuninzi besiphako ngaphakathi kwe-wafer; Ukunciphisa iinkqubo zenkqubo; Ukuphuhlisa itekhnoloji entsha yokutshintsha ivili lokusila lemveli kunye neenkqubo zokusika i-blade wafer ezithanda ukwazisa iziphene; Ukwandisa isakhiwo se-epitaxial ukuphucula ukusebenza kwe-laser edge-emitting laser; Ukunciphisa iindleko zokuvelisa, njl. Ukongeza, ngenxa yokuba ukukhanya okuphumayo kwe-laser edge-emitting kuhlangothini lwecala le-laser semiconductor chip, kunzima ukufezekisa ukupakishwa kwe-chip encinci, ngoko ke inkqubo yokupakisha ehambelana nayo isafuneka. yagqobhoza ngakumbi.