Ukukhetha uMthombo weLaser oLungileyo: I-Edge Emission Semiconductor Laser Icandelo leSibini

Ukukhetha OkulungileyoUmthombo weLaser: Ukukhutshwa komdaSemiconductor LaserIcandelo lesiBini

4. Ubume besicelo se-edge-emission semiconductor lasers
Ngenxa yoluhlu olubanzi lwamaza kunye namandla aphezulu, i-laser-emitting semiconductor lasers isetyenziswe ngempumelelo kwiinkalo ezininzi ezinje ngeemoto, unxibelelwano lwamehlo kunye.laserunyango lwezonyango. NgokukaYole Developpement, iarhente yophando lwemarike eyaziwayo kumazwe ngamazwe, imakethi ye-laser edge-to-emit iyakukhula iye kwi-7.4 yeebhiliyoni zeedola ngo-2027, ngesantya sokukhula sonyaka esiyi-13%. Olu hlumo luya kuqhubeka luqhutywa lunxibelelwano lwe-optical, njengeemodyuli ze-optical, i-amplifiers, kunye ne-3D yokubona izicelo zonxibelelwano lwedatha kunye nonxibelelwano. Kwiimfuno ezahlukeneyo zesicelo, izicwangciso ze-EEL zoyilo ezahlukeneyo zoyilo ziye zaphuhliswa kwishishini, kubandakanywa: i-Fabripero (FP) i-semiconductor lasers, i-Distributed Bragg Reflector (DBR) i-semiconductor lasers, i-external cavity laser (ECL) i-semiconductor lasers, i-laser ye-semiconductor ehambisa ingxelo (DFB laser), i-quantum cascade semiconductor lasers (QCL), kunye ne-wide area laser diodes (BALD).

Ngokunyuka kwemfuno yonxibelelwano lwamehlo, usetyenziso lokuva i-3D kunye nezinye iindawo, imfuno ye-lasemiconductor lasers nayo iyanda. Ukongeza, ii-laser ze-semiconductor eziphuma emphethweni kunye ne-laser-cavity surface-emitting semiconductor lasers nazo zidlala indima ekuzaliseni iziphene zomnye kwizicelo ezivelayo, ezinje:
(1) Kwinkalo yonxibelelwano lwe-optical, i-1550 nm InGaAsP/InP Distributed Feedback ( (DFB laser) EEL kunye ne-1300 nm InGaAsP/InGaP Fabry Pero EEL ziqhele ukusetyenziswa kumgama wothumelo we-2 km ukuya kwi-40 km kunye namazinga othumelo ukuya kuthi ga kwi-40 m, kwi-30m isantya esisezantsi sothumelo, ii-VCsels ezisekelwe kwi-850 nm InGaAs kunye ne-AlGaAs zihamba phambili.
(2) Iilaser ezikhupha umphezulu othe nkqo zineengenelo zobukhulu obuncinci kunye nobude obumxinwa, ngoko ke zisetyenziswe kakhulu kwimarike yomthengi we-elektroniki, kwaye ukuqaqamba kunye namandla aluncedo eedge ephuma kwi-semiconductor lasers zihlahl' indlela yosetyenziso lwezivamvo ezikude kunye nokusetyenzwa kwamandla aphezulu.
(3) Zombini i-laser ye-semiconductor ephuma emphethweni kunye ne-laser ye-semiconductor ye-semiconductor emileyo ingasetyenziselwa ixesha elifutshane - kunye ne-medium-range ye-liDAR ukufezekisa izicelo ezithile ezifana nokufunyanwa kwendawo engaboniyo kunye nokuhamba kwendlela.

5. Uphuhliso lwexesha elizayo
I-laser edge edge semiconductor laser ineenzuzo zokuthembeka okuphezulu, i-miniaturization kunye nokuxinana kwamandla okukhanya okuphezulu, kwaye inamathuba okusebenza okubanzi kunxibelelwano lwe-optical, i-liDAR, unyango kunye nezinye iinkalo. Nangona kunjalo, nangona inkqubo yokuvelisa i-laser ye-semiconductor ephuma emphethweni sele ikhulile, ukuze kuhlangatyezwane nemfuno ekhulayo yeemarike zemizi-mveliso kunye nabathengi kwii-laser-emitting semiconductor lasers, kuyafuneka ukuqhubeka nokwandisa itekhnoloji, inkqubo, ukusebenza kunye neminye imiba ye-edge-emitting semiconductor lasers, kubandakanya: ukunciphisa ingxinano ngaphakathi kwe-laser ye-semiconductor, ebandakanya: Ukunciphisa iinkqubo zenkqubo; Ukuphuhlisa itekhnoloji entsha yokutshintsha ivili lokusila lemveli kunye neenkqubo zokusika i-blade wafer ezithanda ukwazisa iziphene; Ukwandisa isakhiwo se-epitaxial ukuphucula ukusebenza kwe-laser edge-emitting laser; Ukunciphisa iindleko zokuvelisa, njl. Ukongeza, ngenxa yokuba ukukhanya okuphumayo kwe-laser edge-emitting kumacaleni e-semiconductor laser chip, kunzima ukufezekisa ukupakishwa kwe-chip encinci, ngoko ke inkqubo yokupakisha ehambelana nayo isafuna ukuphulwa ngakumbi.