Ukukhetha umthombo ofanelekileyo welaser: i-edge emission semiconductor laser Icandelo lokuQala

Ukukhetha okulungileyoumthombo laser: edge emission semiconductor laser
1. Intshayelelo
I-laser ye-semiconductoriitshiphusi zahlulwe zibe yi-edge edge edge etting laser chips (EEL) kunye nomphezulu othe nkqo we-laser ekhupha iitshiphusi (VCSEL) ngokweenkqubo ezahlukeneyo zokwenziwa kweeresonators, kwaye umahluko wazo wesakhiwo ubonisiwe kuMfanekiso 1. uphuhliso lwetekhnoloji ye-laser ye-semiconductor lukhule ngakumbi, lunoluhlu olubanzi lwamaza, oluphezului-electro-opticalukusebenza kakuhle kokuguqulwa, amandla amakhulu kunye nezinye iingenelo, ezifanelekileyo kakhulu kwi-laser processing, unxibelelwano lwamehlo kunye nezinye iinkalo. Okwangoku, ii-laser semiconductor lasers ziyinxalenye ebalulekileyo yoshishino lwe-optoelectronics, kwaye izicelo zabo ziye zagubungela ishishini, unxibelelwano, isayensi, abathengi, umkhosi kunye ne-aerospace. Ngophuhliso kunye nenkqubela phambili yetekhnoloji, amandla, ukuthembeka kunye nokusebenza kakuhle kokuguqulwa kwamandla e-edge-emitting semiconductor lasers kuye kwaphuculwa kakhulu, kwaye ithemba labo lokusetyenziswa libanzi ngakumbi.
Okulandelayo, ndiya kukukhokelela ekubeni uxabise ngakumbi umtsalane okhethekileyo wokukhupha ecaleniiisemiconductor lasers.

Umzobo 1 (ekhohlo) icala elikhupha i-laser semiconductor kunye (ekunene) nomphezulu othe nkqo umzobo welaser okhuphayo

2. Umgaqo osebenzayo we-edge emission semiconductorlaser
Ubume be-laser ye-semiconductor ye-edge-emitting semiconductor inokwahlulwa ibe ngamacandelo amathathu alandelayo: ummandla osebenzayo we-semiconductor, umthombo wempompo kunye ne-resonator optical. Ngokwahlukileyo kwii-resonators ze-laser ze-laser ezikhupha umphezulu othe nkqo (owenziwe ngezipili ze-Bragg eziphezulu nasezantsi), ii-resonators kwizixhobo ze-laser ze-semiconductor ezikhupha emphethweni ubukhulu becala zenziwe ziifilimu zamehlo kumacala omabini. Isakhiwo esiqhelekileyo sesixhobo se-EEL kunye nesakhiwo se-resonator siboniswe kwi-Figure 2. I-photon kwi-edge-emission semiconductor laser device ikhuliswe ngokukhethwa kwemodethi kwi-resonator, kwaye i-laser yenziwa kwicala elihambelana ne-substrate surface. Izixhobo ze-laser ze-Edge-emitting semiconductor laser zinoluhlu olubanzi lwamaza okusebenza kwaye zifanelekile kwizicelo ezininzi ezisebenzayo, ukuze zibe ngomnye wemithombo efanelekileyo yelaser.

Izalathisi zokuvavanya ukusebenza kwee-laser ze-semiconductor edge-emitting nazo zihambelana nezinye iilaser ze-semiconductor, kubandakanywa: (1) i-laser lasing wavelength; (2) I-Threshold current Ith, oko kukuthi, umjelo apho i-laser diode iqala ukuvelisa i-laser oscillation; (3) I-Iop yangoku esebenzayo, oko kukuthi, i-current current xa i-laser diode ifikelela kumandla okuphuma okulinganiselweyo, le parameter isetyenziselwa ukuyila kunye nokuguqulwa kwesekethe ye-laser drive; (4) Ukusebenza kakuhle kwe-slope; (5) Umahluko othe nkqo iEngile θ⊥; (6) Ukwahlukana okuthe tye iEngile θ∥; 7

3. Inkqubela phambili yophando lwee-GaAs kunye ne-GaN based edge emitting semiconductor lasers
I-laser ye-semiconductor esekwe kwi-GaAs semiconductor imathiriyeli yenye yezona teknoloji ziqolileyo ze-laser semiconductor. Okwangoku, i-GAAS-based near-infrared band (760-1060 nm) ii-laser ze-semiconductor edge-emitting semiconductor ziye zasetyenziswa ngokubanzi kurhwebo. Njengesixhobo semiconductor sesizukulwana sesithathu emva kwe-Si kunye ne-GaAs, i-GaN iye yaxhatshazwa ngokubanzi kuphando lwezenzululwazi kunye neshishini ngenxa yeempawu zayo ezibalaseleyo zomzimba kunye neekhemikhali. Ngokuphuhliswa kwezixhobo ze-OPtoelectronic ezisekelwe kwi-GAN kunye nemigudu yabaphandi, i-GAN-based light-emitting diodes kunye ne-edge-emitting lasers ziye zaphuculwa.