Ukukhetha okufanelekileyoumthombo weleza: i-laser ye-semiconductor emission edge
1. Intshayelelo
Ileyiza ye-semiconductorIitships zahlulwe zibe ziitships zelaser ezikhupha imiphetho (EEL) kunye neetships zelaser ezikhupha imiphetho (VCSEL) ngokweenkqubo ezahlukeneyo zokuvelisa ii-resonators, kwaye umahluko wazo othile wolwakhiwo uboniswe kuMfanekiso 1. Xa kuthelekiswa nelaser ekhupha imiphetho yomphezulu ovulekileyo, uphuhliso lwetekhnoloji yelaser ekhupha imiphetho ye-semiconductor lukhulile ngakumbi, lunoluhlu olubanzi lwamaza, luphezulu.i-electro-opticalukusebenza kakuhle kokuguqula, amandla amakhulu kunye nezinye izibonelelo, zifanelekile kakhulu ekucutshungulweni kwelaser, unxibelelwano lwe-optical kunye nezinye iinkalo. Okwangoku, iilaser ze-semiconductor ezikhupha imiphetho ziyinxalenye ebalulekileyo kushishino lwe-optoelectronics, kwaye usetyenziso lwazo lugubungele ishishini, unxibelelwano, isayensi, abathengi, umkhosi kunye neenqwelo-moya. Ngophuhliso kunye nenkqubela phambili yetekhnoloji, amandla, ukuthembeka kunye nokusebenza kakuhle kokuguqula amandla kweelaser ze-semiconductor ezikhupha imiphetho kuphuculwe kakhulu, kwaye amathuba okusetyenziswa kwazo ayanda nangakumbi.
Okulandelayo, ndiza kukukhokelela ekubeni uqonde ngakumbi ubuhle obukhethekileyo bokukhupha izinto ecaleniiileyiza ze-semiconductor.
Umfanekiso 1 (ekhohlo) i-laser ye-semiconductor ekhupha icala kunye (ekunene) nomzobo wesakhiwo se-laser ekhupha umphezulu othe nkqo
2. Umgaqo wokusebenza we-edge emission semiconductorileza
Ulwakhiwo lwelaser ye-semiconductor ekhupha imiphetho lunokwahlulwa lube ngamacandelo amathathu alandelayo: indawo esebenzayo ye-semiconductor, umthombo wepompo kunye ne-optical resonator. Ngokungafaniyo ne-resonators ze-vertical cavity surface-emitting lasers (ezenziwe zizibuko zeBragg eziphezulu nezisezantsi), i-resonators kwizixhobo ze-semiconductor ekhupha imiphetho zenziwe ikakhulu ziifilimu ze-optical kumacala omabini. Ulwakhiwo oluqhelekileyo lwesixhobo se-EEL kunye nolwakhiwo lwe-resonator luboniswe kuMfanekiso 2. I-photon kwisixhobo se-semiconductor semiconductor semiconductor semiconductor ikhuliswa ngokukhethwa kwendlela kwi-resonator, kwaye i-laser yenziwe kwicala elihambelana nomphezulu we-substrate. Izixhobo ze-laser ze-semiconductor ekhupha imiphetho zinoluhlu olubanzi lwee-wavelengths zokusebenza kwaye zifanelekile kwizicelo ezininzi ezisebenzayo, ngoko ke ziba ngomnye wemithombo ye-laser efanelekileyo.
Ii-indexes zovavanyo lokusebenza kwee-laser ze-semiconductor ezikhupha umbane zikwahambelana nezinye ii-laser ze-semiconductor, kuquka: (1) ubude be-laser obusebenzisa i-laser; (2) I-Threshold current Ith, oko kukuthi, umbane apho i-laser diode iqala khona ukuvelisa i-laser oscillation; (3) I-Iop yangoku esebenzayo, oko kukuthi, umbane oqhubayo xa i-laser diode ifikelela kumandla okukhupha alinganisiweyo, le parameter isetyenziswa kuyilo kunye nokuguqulwa kwesekethe ye-laser drive; (4) Ukusebenza kakuhle kwe-Slope; (5) I-Angle ye-Vertical divergence θ⊥; (6) I-Angle ye-Horizontal divergence θ∥; (7) Jonga i-Im yangoku, oko kukuthi, ubungakanani bangoku be-chip ye-laser ye-semiconductor kumandla okukhupha alinganisiweyo.
3. Inkqubela phambili yophando lwe-GaAs kunye ne-GaN based edge emitting semiconductor lasers
I-laser ye-semiconductor esekwe kwizixhobo ze-semiconductor ze-GaAs yenye yezona teknoloji ze-semiconductor ezivuthiweyo. Okwangoku, ii-laser ze-semiconductor ezisebenzisa i-GAAS ezisebenzisa i-infrared band (760-1060 nm) zisetyenziswa kakhulu kwezorhwebo. Njengezixhobo ze-semiconductor zesizukulwana sesithathu emva kwe-Si kunye ne-GaAs, i-GaN ibisoloko ixhalabele uphando lwesayensi kunye noshishino ngenxa yeempawu zayo ezintle zomzimba nezekhemikhali. Ngophuhliso lwezixhobo ze-optoelectronic ezisekelwe kwi-GAN kunye nemizamo yabaphandi, ii-diode ezisebenzisa ukukhanya ezisekelwe kwi-GAN kunye nee-laser ezisebenzisa i-edge-emitting ziye zaphuhliswa njengemizi-mveliso.
Ixesha leposi: Jan-16-2024