OFC2024 photodetectors

Namhlanje makhe sijonge kwi-OFC2024ii-photodetectors, equka ikakhulu i-GeSi PD/APD, InP SOA-PD, kunye ne-UTC-PD.

1. I-UCDAVIS iqaphela i-resonant ebuthathaka 1315.5nm non-symmetric Fabry-Perotifotodetectorngesakhono esincinci kakhulu, esiqikelelwa kwi-0.08fF. Xa i-bias -1V (-2V), umbane omnyama ngu-0.72 nA (3.40 nA), kwaye izinga lokuphendula ngu-0.93a / W (0.96a / W). Amandla optical agcweleyo yi-2 mW (3 mW). Iyakwazi ukuxhasa imifuniselo yedatha ye-38 GHz ephezulu.
Lo mzobo ulandelayo ubonisa ubume be-AFP PD, equlathe i-waveguide edityaniswe ne-Ge-on-Siyi-photodetectorkunye ne-SOI-Ge yangaphambili ye-waveguide ephumelelayo> i-90% imowudi ehambelana nokudibanisa kunye nokubonakala kwe-<10%. Ngasemva yiBragg reflector (DBR) esasaziweyo ene-reflection ye>95%. Ngokusebenzisa i-cavity yoyilo olulungisiweyo (imeko yohambo olujikelezayo oluhambelana nesigaba), ukubonakaliswa kunye nokuhanjiswa kwe-resonator ye-AFP kunokupheliswa, okubangelwa ukufunxa i-Ge detector phantse i-100%. Ngaphezulu kwe-20nm yonke i-bandwidth ye-wavelength ephakathi, i-R + T <2% (-17 dB). Ububanzi be-Ge yi-0.6µm kwaye amandla aqikelelwa ukuba yi-0.08fF.

2, iYunivesithi yaseHuazhong yeSayensi kunye neTekhnoloji ivelise i-silicon germaniumi-avalanche photodiode, i-bandwidth> 67 GHz, inzuzo> 6.6. I-SACMIsixhobo sokufota seAPDUlwakhiwo lwepipin enqamlezileyo lwendibaniselwano lwenziwe kwiplatifti ye-silicon ebonakalayo. I-Intrinsic germanium (i-Ge) kunye nesilicon yangaphakathi (i-Si) isebenza njengomaleko ofunxa ukukhanya kunye ne-electron ephindwe kabini umaleko, ngokulandelelanayo. Ummandla we-i-Ge onobude be-14µm uqinisekisa ukufunxwa kokukhanya okwaneleyo kwi-1550nm. Iingingqi ezincinci ze-i-Ge kunye ne-i-Si zikulungele ukunyusa ubuninzi be-photocurrent kunye nokwandisa i-bandwidth phantsi kwe-voltage ephezulu ye-bias. Imephu yamehlo ye-APD yalinganiswa kwi--10.6 V. Nge-input optical power -14 dBm, imephu yamehlo ye-50 Gb / s kunye ne-64 Gb / s imiqondiso ye-OOK iboniswe ngezantsi, kwaye i-SNR elinganisiweyo yi-17.8 kunye ne-13.2 dB , ngokulandelelanayo.

3. Izibonelelo ze-IHP 8-intshi zeBiCMOS zolingo zibonisa igermaniumPD ifotodetectorngobubanzi bomphetho obumalunga ne-100 nm, enokuvelisa eyona ndawo iphezulu yombane kunye nelona xesha lifutshane le-photocarrier drift. I-Ge PD ine-OE bandwidth ye-265 GHz@2V@ 1.0mA DC photocurrent. Inkqubo yokuhamba iboniswe ngezantsi. Olona phawu lukhulu kukuba ukufakelwa kwe-ion ye-SI exutyiweyo iyekwa, kwaye iskimu sokukhulisa ukukhula samkelwa ukunqanda impembelelo yokufakelwa kwe-ion kwigermanium. Umsinga omnyama ngu-100nA,R = 0.45A /W.
I-4, i-HHI ibonisa i-InP SOA-PD, equkethe i-SSC, i-MQW-SOA kunye ne-high speed photodetector. Yeqela le-O. I-PD inempendulo ye-0.57 A / W engaphantsi kwe-1 dB PDL, ngelixa i-SOA-PD inempendulo ye-24 A / W engaphantsi kwe-1 dB PDL. I-bandwidth yezo zimbini yi ~ 60GHz, kwaye umahluko we-1 GHz unokubangelwa kwi-resonance frequency ye-SOA. Akukho siphumo sepateni sibonwe kumfanekiso wamehlo wangempela. I-SOA-PD inciphisa amandla afunekayo optical malunga ne-13 dB kwi-56 GBaud.

5. Izixhobo ze-ETH Udidi lwe-II luphuculwe i-GaInAsSb/InP UTC-PD, ene-bandwidth ye-60GHz@ zero bias kunye negunya eliphezulu lokuphuma kwe-11 DBM kwi-100GHz. Ukuqhubekeka kweziphumo zangaphambili, kusetyenziswa i-GaInAsSb's ephuculweyo yothutho lwe-electron. Kweli phepha, iileya zokufunxa eziphuculweyo zibandakanya i-GaInAsSb ene-doped kakhulu ye-100 nm kunye ne-GaInAsSb engagqitywanga ye-20 nm. Uluhlu lwe-NID lunceda ekuphuculeni ukuphendula ngokubanzi kwaye kunceda ekunciphiseni i-capacitance yonke yesixhobo kunye nokuphucula i-bandwidth. I-64µm2 UTC-PD ine-zero-bias bandwidth ye-60 GHz, amandla aphumayo -11 dBm kwi-100 GHz, kunye ne-saturation current ye-5.5 mA. Kwi-bias eguqukayo ye-3 V, i-bandwidth inyuka ukuya kwi-110 GHz.

6. I-Innolight iseke imodeli yokuphendula rhoqo ye-germanium silicon photodetector ngokwesiseko sokuthathela ingqalelo ngokupheleleyo idoping yesixhobo, ukuhanjiswa kombane kunye nexesha lodluliselo olwenziwa ngefoto. Ngenxa yesidingo samandla amakhulu okufakwayo kunye ne-bandwidth ephezulu kwizicelo ezininzi, igalelo elikhulu lamandla optical liya kubangela ukuhla kwe-bandwidth, eyona nto ingcono kakhulu kukunciphisa i-concentration carrier in germanium ngoyilo lwesakhiwo.

I-7, iYunivesithi yaseTsinghua yenzelwe iindidi ezintathu ze-UTC-PD, (1) i-100GHz bandwidth double drift layer (DDL) isakhiwo esinamandla amakhulu okugcoba i-UTC-PD, (2) i-100GHz i-bandwidth double drift layer (DCL) isakhiwo esinokusabela okuphezulu kwe-UTC-PD , (3) I-230 GHZ i-bandwidth ye-MUTC-PD enegunya eliphezulu lokuzalisa, Kwiimeko ezahlukeneyo zesicelo, amandla okugcoba aphezulu, i-bandwidth ephezulu kunye nokuphendula okuphezulu kunokuba luncedo kwixesha elizayo xa ungena kwixesha le-200G.