Itekhnoloji entsha ye-silicon photodetector encinci

Itekhnoloji entsha yei-silicon photodetector encinci
Izakhiwo zokuthatha ifoton zisetyenziselwa ukunyusa ukufunxwa kokukhanya kwindawo encincii-silicon photodetectors
Iinkqubo ze-Photonic zifumana ngokukhawuleza kwizicelo ezininzi ezivelayo, kubandakanywa unxibelelwano lwe-optical, i-liDAR sensing, kunye ne-imaging yezokwelapha. Nangona kunjalo, ukwamkelwa okubanzi kweefotonics kwizisombululo zobunjineli bexesha elizayo kuxhomekeke kwindleko yokuvelisaii-photodetectors, nto leyo ixhomekeke kakhulu kuhlobo lwe-semiconductor esetyenziselwa loo njongo.
Ngokwemveli, i-silicon (Si) ibe yeyona semiconductor ixhaphakileyo kwishishini le-elektroniki, kangangokuba uninzi lwamashishini luye lwavuthwa malunga nale nto. Ngelishwa, i-Si ine-coefficient yokufunxa ukukhanya ebuthathaka kwi-spectrum ekufutshane ye-infrared (NIR) xa kuthelekiswa nezinye i-semiconductors ezifana ne-gallium arsenide (GaAs). Ngenxa yoko, ii-GaAs kunye ne-alloys ezinxulumene nazo ziphumelela kwizicelo zefotonic kodwa azihambelani neenkqubo zesiqhelo ze-metal-oxide semiconductor (CMOS) ezisetyenziselwa ukuveliswa kwezinto ezininzi zombane. Oku kukhokelele ekonyukeni kabukhali kwiindleko zabo zokuvelisa.
Abaphandi baye baqulunqa indlela yokuphucula kakhulu i-infrared absorption kwi-silicon, enokukhokelela ekunciphiseni iindleko kwizixhobo ze-photonic ezisebenza kakhulu, kunye neqela lophando le-UC Davis liphayona isicwangciso esitsha sokuphucula kakhulu ukukhanya kweefilimu ze-silicon ezincinci. Kwiphepha labo lamva nje kwi-Advanced Photonics Nexus, babonisa okokuqala umboniso wokulinga we-silicon-based photodetector ene-light-capturing micro- kunye ne-nano-surface structures, ukufezekisa ukuphuculwa komsebenzi okungazange kubonwe ngaphambili ngokuthelekiswa ne-GaAs kunye nezinye ii-semiconductors zeqela le-III-V. . I-photodetector ine-micron-thick cylindrical silicon plate ebekwe kwi-substrate ekhuselayo, enentsimbi "iminwe" enwebeka ngendlela yefoloko yomnwe ukusuka kwintsimbi yokudibanisa phezulu kwipleyiti. Okubalulekileyo kukuba, i-silicon lumpy igcwele imingxuma ejikelezayo ehlelwe kwipateni ye-periodic esebenza njengeendawo zokubamba iifoton. Ubume besixhobo bubonke bubangela ukuba ukukhanya okuqhelekileyo kwenzeke ukuba kugobe phantse nge-90 ° xa ibetha umphezulu, ukuyivumela ukuba isasazeke ecaleni kwendiza ye-Si. Ezi ndlela zokusasaza ezisecaleni zonyusa ubude bokuhamba kokukhanya kwaye zicothise ngokufanelekileyo, okukhokelela kunxibelelwano oluthe kratya lokukhanya kwaye ngaloo ndlela kwandiswe ukufunxa.
Abaphandi baye baqhuba ukulinganisa okubonakalayo kunye nohlalutyo lwethiyori ukuze baqonde ngcono imiphumo yezakhiwo zokubanjwa kweefotoni, kwaye baqhube iimvavanyo ezininzi ngokuthelekisa ii-photodetectors kunye nangaphandle kwazo. Baye bafumanisa ukuba ukuthathwa kwefoton kukhokelele ekuphuculeni okubalulekileyo kokufunxwa kwebroadband kwi-spectrum ye-NIR, ukuhlala ngaphezulu kwe-68% kunye nencopho ye-86%. Kuyafaneleka ukuba uqaphele ukuba kwibhendi ekufutshane ye-infrared, i-coefficient yokufunxa ye-photon capture photodetector iphindwe kaninzi kune-silicon eqhelekileyo, idlula i-gallium arsenide. Ukongeza, nangona uyilo olucetywayo lolweepleyiti zesilicon ezingqindilili eziyi-1μm, ukulinganisa kwe-30 nm kunye ne-100 nm bhanyabhanya yesilicon ehambelana nombane we-CMOS ubonisa ukusebenza okwandisiweyo okufanayo.
Ngokubanzi, iziphumo zolu phononongo zibonisa isicwangciso esithembisayo sokuphucula ukusebenza kwe-silicon-based photodetectors kwizicelo ezivelayo zeefotonics. Ukufunxa okuphezulu kunokufezekiswa nakwimigangatho ye-silicon ye-ultra-thin, kwaye i-parasitic capacitance yesekethe inokugcinwa iphantsi, eyona nto ibalulekileyo kwiinkqubo zesantya esiphezulu. Ukongeza, indlela ecetywayo iyahambelana neenkqubo zokwenziwa kwe-CMOS zangoku kwaye ke ngoko inamandla okuguqula indlela i-optoelectronics edityaniswe ngayo kwiisekethe zemveli. Oku, kunokuvula indlela yokutsiba okukhulu kuthungelwano lwekhompyuter olukhawulezayo olukhawulezayo kunye nobuchwepheshe bokucinga.