Yazisa i-silicon photonic ye-Mach-Zende imodyuliImodyuli ye-MZM
IMach-zende modulator yeyona nto ibalulekileyo kwisiphelo sothumelo kwimodyuli ye-silicon ye-400G / 800G ye-silicon photonic. Okwangoku, kukho iindidi ezimbini zeemodyuli ekupheleni komthumeli weemodyuli ze-silicon photonic eziveliswe ngobuninzi: Olunye uhlobo yi-PAM4 imodyuli esekelwe kwindlela yokusebenza ye-100Gbps ye-channel eyodwa, efezekisa ukuhanjiswa kwedatha ye-800Gbps ngokusebenzisa indlela ye-4-channel / 8-channel parallel kwaye isetyenziswa ikakhulu kumaziko edatha kunye ne-Gpus. Ngokuqinisekileyo, i-channel eyodwa ye-200Gbps ye-silicon photonics ye-Mach-Zeonde imodyuli eya kukhuphisana ne-EML emva kokuveliswa kobuninzi kwi-100Gbps akufanele ibe kude. Uhlobo lwesibini luImodyuli ye-IQisetyenziswe kumgama omde ohambelanayo wonxibelelwano lwamehlo. Ukucwiliswa okuhambelanayo okukhankanywe kwinqanaba langoku kubhekiselele kumgama wokuhanjiswa kweemodyuli ze-optical ukusuka kumawaka eekhilomitha kwinethiwekhi ye-metropolitan backbone ukuya kwiimodyuli ze-ZR ze-optical ukusuka kwi-80 ukuya kwii-120 iikhilomitha, kunye nakwiimodyuli ze-LR ze-optical ukusuka kwiikhilomitha ezili-10 kwixesha elizayo.
Umgaqo wesantya esiphezuluiimodyuli ze-siliconinokwahlulwa ibe ngamacandelo amabini: i-optics kunye nombane.
Inxalenye ye-Optical: Umgaqo osisiseko yi-interferometer ye-Mach-zeund. I-beam yokukhanya idlula kwi-50-50 ye-beam splitter kwaye ibe yimisebe emibini yokukhanya kunye namandla alinganayo, aqhubeka ehanjiswa kwiingalo ezimbini zemodyuli. Ngokulawulwa kwesigaba kwenye yeengalo (oko kukuthi, isalathisi se-refractive se-silicon sitshintshwa yi-heater ukuguqula isantya sokusasazwa kwengalo enye), ukudibanisa kokugqibela kwentsimbi kuqhutyelwa ekuphumeni kweengalo zombini. Ubude besigaba sokuphazamiseka (apho iincopho zeengalo zombini zifikelela ngaxeshanye) kunye nokurhoxiswa kokuphazamiseka (apho umahluko wesigaba ngu-90 ° kwaye iincopho zichasene nemijelo) zinokufezekiswa ngokuphazamiseka, ngaloo ndlela kumodareyitha ukukhanya kokukhanya (okunokuqondwa njenge-1 kunye ne-0 kwiimpawu zedijithali). Oku kukuqonda okulula kunye nendlela yokulawula indawo yokusebenza kumsebenzi osebenzayo. Ngokomzekelo, ekunxibelelaneni kwedatha, sisebenza kwindawo ye-3dB ephantsi kunencopho, kwaye kunxibelelwano oluhambelanayo, sisebenza ngaphandle kokukhanya. Nangona kunjalo, le ndlela yokulawula umahluko wesigaba ngokufudumeza kunye nokutshatyalaliswa kobushushu ukulawula isignali yokuphuma kuthatha ixesha elide kwaye ayikwazi ukuhlangabezana nemfuno yethu yokuhambisa i-100Gpbs ngomzuzwana. Ngoko ke, kufuneka sifumane indlela yokufezekisa isantya esikhawulezayo sokumodareyitha.
Icandelo lombane liquka icandelo le-PN junction elidinga ukutshintsha isalathisi se-refractive kwi-frequency ephezulu, kunye ne-electrode wave structure ehambelana nesantya somqondiso wombane kunye ne-optical signal. Umgaqo wokutshintsha isalathisi se-refractive yi-plasma dispersion effect, eyaziwa ngokuba yi-free carrier dispersion effect. Ibhekisela kwisiphumo somzimba ukuba xa ugxininiso lwabathwali bamahhala kwizinto eziphathekayo ze-semiconductor zitshintsha, iindawo zangempela kunye neengcamango ze-index ye-refractive index nazo zitshintsha ngokufanelekileyo. Xa i-concentration carrier in the semiconductor materials inyuka, i-coefficient ye-absorption ye-absorption iyanda ngelixa inxalenye yokwenyani ye-refractive index iyancipha. Ngokufanayo, xa abathwali bezinto ze-semiconductor behla, i-coefficient yokufunxa iyancipha ngelixa inxalenye yokwenyani ye-refractive index iyanda. Ngomphumo onjalo, kwizicelo ezisebenzayo, ukumodareyithwa kweempawu eziphezulu ze-frequency kunokufezekiswa ngokulawula inani labathwali kwi-waveguide yokudlulisa. Ekugqibeleni, imiqondiso ye-0 kunye ne-1 ibonakala kwindawo yokuphuma, ilayisha izibonakaliso zombane zesantya esiphezulu kwi-amplitude yokukhanya kokukhanya. Indlela yokuphumeza oku kungokudibana kwe-PN. Abathwali bamahhala be-silicon ecocekileyo bambalwa kakhulu, kwaye ukuguqulwa kobuninzi akwanelanga ukuhlangabezana notshintsho kwi-index refractive. Ke ngoko, kuyafuneka ukonyusa isiseko somthwali kwi-waveguide yokuhambisa nge-doping silicon ukufezekisa utshintsho kwisalathiso se-refractive, ngaloo ndlela ufezekise ukumodareyitha okuphezulu.
Ixesha lokuposa: May-12-2025