Umgca ophezuluimodyuli ye-electro-optickunye nesicelo sefoton ye-microwave
Ngeemfuno ezikhulayo zeenkqubo zonxibelelwano, ukuze kuphuculwe ngakumbi ukuhanjiswa kwemiqondiso, abantu baya kuxuba iifotoni kunye nee-electron ukuze baphumeze iingenelo ezihambelanayo, kwaye iifotonic ze-microwave ziya kuzalwa. Imodyuli ye-electro-optical iyafuneka ukuze kuguqulwe umbane ukuze ukhanyiseIinkqubo zeefotonic ze-microwave, kwaye eli nyathelo eliphambili lidla ngokumisela ukusebenza kwenkqubo yonke. Ekubeni ukuguqulwa kwesignali yerediyo kwi-optical domain yinkqubo yesignali ye-analog, kwaye eqhelekileyoiimodyuli ze-electro-opticalUkungahambelani kwemvelo, kukho ukonakala kophawu kwinkqubo yoguqulelo. Ukuze kuphunyezwe uqikelelo lokumodareyitha komgca, indawo yokusebenza yemodareyitha idla ngokulungiswa kwindawo ye-orthogonal bias point, kodwa isenako ukuhlangabezana neemfuno zekhonkco lefoton ye-microwave yomgca wemodyuli. Iimodyuli ze-Electro-optic ezinomgca ophezulu zifuneka ngokukhawuleza.
I-high-speed refractive index modulation yezinto ze-silicon zidla ngokufezekiswa yi-free carrier plasma dispersion (FCD) effect. Zombini iziphumo ze-FCD kunye ne-PN junction modulation azikho mgca, okwenza i-silicon modulator ibe ngaphantsi kwe-lithium niobate modulator. Izinto zeLithium niobate zibonisa kakuhle kakhuluukumodareyitha kwe-electro-opticaliipropathi ngenxa yempembelelo yazo yePucker. Ngelo xesha, izinto ze-lithium niobate zineenzuzo ze-bandwidth enkulu, iimpawu ezintle zokumodareyitha, ilahleko ephantsi, ukudibanisa okulula kunye nokuhambelana nenkqubo ye-semiconductor, ukusetyenziswa kwefilimu encinci ye-lithium niobate ukwenza i-high-performance electro-optical modulator, xa kuthelekiswa ne-silicon. phantse akukho "ipleyiti emfutshane", kodwa kunye nokufezekisa umgca ophezulu. Ifilim encinci i-lithium niobate (LNOI) imodyuli ye-electro-optic kwi-insulator ibe lukhokelo lophuhliso oluthembisayo. Ngophuhliso lwefilimu ebhityileyo ye-lithium niobate itekhnoloji yokulungiselela izinto kunye netekhnoloji ye-waveguide etching, ukusebenza kakuhle koguqulo kunye nokudityaniswa okuphezulu kwefilimu ebhityileyo ye-lithium niobate imodyuli ye-electro-optic iye yaba yintsimi yemfundo yamazwe ngamazwe kunye neshishini.
Iimpawu zefilimu encinci ye-lithium niobate
EUnited States i-DAP ye-AR yesicwangciso yenze olu vavanyo lulandelayo lwezixhobo ze-lithium niobate: ukuba iziko le-electronic revolution lithiywe emva kwempahla ye-silicon eyenza ukuba kwenzeke, ke indawo yokuzalwa ye-photonics revolution iya kuthiywa ngegama elithi lithium niobate. . Oku kungenxa yokuba i-lithium niobate idibanisa i-electro-optical effect, i-acousto-optical effect, i-piezoelectric effect, i-thermoelectric effect kunye ne-photorefractive effect kwenye, njengezinto ze-silicon kwintsimi ye-optics.
Ngokweempawu zokuhanjiswa kwe-optical, izinto ze-InP zineyona lahleko inkulu yokuhanjiswa kwe-chip ngenxa yokufunxa ukukhanya kwibhendi ye-1550nm esetyenziswa ngokuqhelekileyo. I-SiO2 kunye ne-silicon nitride zineempawu ezingcono zokuhambisa, kwaye ilahleko inokufikelela kwinqanaba le ~ 0.01dB / cm; Okwangoku, ukulahleka kwe-waveguide ye-waveguide yefilimu encinci ye-lithium niobate waveguide inokufikelela kwinqanaba le-0.03dB / cm, kwaye ukulahlekelwa kwefilimu ye-lithium niobate waveguide inamandla okuncitshiswa ngakumbi ngokuphuculwa okuqhubekayo kwinqanaba lezobuchwepheshe kwixesha elizayo. Ke ngoko, ifilimu encinci ye-lithium niobate impahla iya kubonisa ukusebenza kakuhle kwezakhiwo zokukhanya okungahambiyo ezifana nendlela yephotosynthetic, i-shunt kunye ne-microring.
Ngokubhekiselele kwisizukulwana sokukhanya, kuphela i-InP enekhono lokukhupha ukukhanya ngokuthe ngqo; Ngoko ke, usetyenziso lweefotoni ze-microwave, kuyimfuneko ukwazisa i-InP esekelwe kumthombo wokukhanya kwi-LNOI esekelwe kwi-photonic edibeneyo ye-chip ngendlela yokubuyisela i-welding okanye ukukhula kwe-epitaxial. Ngokumalunga nokumodareyithwa kokukhanya, kuye kwagxininiswa ngasentla ukuba ifilimu ebhityileyo ye-lithium niobate imathiriyeli kulula ukufikelela kwi-bandwidth enkulu yokumodareyitha, i-voltage esezantsi yesiqingatha-amaza kunye nelahleko esezantsi yokuhanjiswa kune-InP kunye ne-Si. Ngaphezu koko, umgca ophezulu wokumodareyithwa kwe-electro-optical yefilim encinci ye-lithium niobate imathiriyeli ibalulekile kuzo zonke izicelo ze-microwave photon.
Ngokubhekiselele kwindlela yokukhanya, isantya esiphezulu se-electro-optical impendulo yefilimu encinci ye-lithium niobate yenza i-LNOI esekelwe kwi-optical switch ekwazi ukutshintshwa kwe-high-speed optical umzila, kunye nokusetyenziswa kwamandla okutshintsha kwesantya esiphezulu kuphantsi kakhulu. Kusetyenziso oluqhelekileyo lwetekhnoloji yefoton ye-microwave edibeneyo, i-chip elawulwa ngokubonakalayo inamandla okutshintsha ngesantya esiphezulu ukuhlangabezana neemfuno zokuskena okukhawulezileyo kwe-beam, kunye neempawu zokusetyenziswa kwamandla aphantsi kakhulu zilungelelaniswe kakuhle kwiimfuno ezingqongqo zobukhulu obukhulu. -isikali senkqubo yoluhlu. Nangona i-InP esekwe kwi-optical switch inokuqonda kwakhona indlela yokutshintsha isantya esiphezulu, iya kwazisa ingxolo enkulu, ngakumbi xa iswitshi ye-multilevel optical iscascaded, i-coefficient yengxolo iya kuba mbi kakhulu. I-Silicon, i-SiO2 kunye ne-silicon nitride izinto zinokutshintsha kuphela iindlela ze-optical ngokusebenzisa i-thermo-optical effect okanye i-carrier dispersion effect, enobugwenxa bokusetyenziswa kwamandla aphezulu kunye nesantya sokutshintsha ngokukhawuleza. Xa ubungakanani boluhlu lwenqanaba lenqanaba likhulu, alikwazi ukuhlangabezana neemfuno zokusetyenziswa kwamandla.
Ngokubhekiselele kwi-optical amplification, isemiconductor optical amplifier (SOA) esekwe kwi-InP sele ikhulile ukuba isetyenziselwe urhwebo, kodwa ineziphene zomlinganiso wengxolo ephezulu kunye namandla asezantsi aphumayo agcweleyo, angasebenziyo ekusetyenzisweni kweefotoni ze-microwave. Inkqubo yokukhulisa iparametric yefilimu encinci ye-lithium niobate waveguide esekwe kwi-activation yamaxesha athile kunye ne-inversion inokufikelela kwingxolo ephantsi kunye namandla aphezulu kwi-chip optical amplification, enokuthi ihlangabezane kakuhle neemfuno zetekhnoloji edibeneyo ye-microwave photon ye-on-chip optical amplification.
Ngokubhekiselele ekuboneni ukukhanya, ifilimu encinci ye-lithium niobate ineempawu ezilungileyo zokuhambisa ukukhanya kwi-1550 nm band. Umsebenzi wokuguqulwa kwe-photoelectric awukwazi ukuphunyezwa, ngoko ke kwizicelo ze-microwave photon, ukwenzela ukuhlangabezana neemfuno zokuguqulwa kwe-photoelectric kwi-chip. I-InGaAs okanye iiyunithi zokubona i-Ge-Si kufuneka zifakwe kwi-LNOI esekelwe kwi-photonic edibeneyo ye-chips ngokulayishwa kwakhona kwe-welding okanye ukukhula kwe-epitaxial. Ngokuphathelele ukudibanisa kunye ne-fiber optical, ngenxa yokuba i-fiber optical ngokwayo iyimpahla ye-SiO2, i-mode field ye-SiO2 waveguide ine-degree ephezulu ehambelanayo kunye ne-mode field ye-fiber optical, kwaye ukudibanisa kuyona nto ifanelekileyo. Idayamitha yemo yentsimi yesikhokelo somda wefilimu ebhityileyo i-lithium niobate imalunga ne-1μm, eyahluke kakhulu kumhlaba wemowudi yefiber ebonakalayo, ngoko ke uguqulo olufanelekileyo lwendawo kufuneka lwenziwe ukuze lutshatise intsimi yemowudi yefiber ebonakalayo.
Ngokumalunga nokudityaniswa, nokuba izixhobo ezahlukeneyo zinamandla okudibanisa okuphezulu kuxhomekeke ikakhulu kwiradiyasi egobayo ye-waveguide (echatshazelwe kukuncitshiswa kommandla wendlela ye-waveguide). I-waveguide ethintelwe ngamandla ivumela iradiyasi encinci yokugoba, eluncedo ngakumbi ekufezekiseni ukuhlanganiswa okuphezulu. Ke ngoko, i-lithium niobate waveguides yefilimu encinci inamandla okufikelela ukudibanisa okuphezulu. Ngoko ke, ukubonakala kwefilimu encinci ye-lithium niobate yenza ukuba izinto ze-lithium niobate zidlale ngokwenene indima ye-optical "silicon". Ukusetyenziswa kweefotoni ze-microwave, inzuzo yefilimu encinci ye-lithium niobate ibonakala ngakumbi.
Ixesha lokuposa: Apr-23-2024