Ukuthelekiswa kweenkqubo ze-photonic ezidibeneyo zesekethe

Ukuthelekiswa kweenkqubo ze-photonic ezidibeneyo zesekethe
Umzobo we-1 ubonisa ukuthelekiswa kweenkqubo ezimbini zezinto eziphathekayo, i-indium Phosphorus (InP) kunye ne-silicon (Si). Ukunqaba kwe-indium kwenza i-InP ibe yinto ebiza kakhulu kune-Si. Ngenxa yokuba iisekethe ezisekwe kwi-silicon zibandakanya ukukhula okuncinci kwe-epitaxial, isivuno seesekethe ezisekwe kwi-silicon zihlala ziphezulu kunezo zesekethe ze-InP. Kwiisekethe ezisekwe kwisilicon, igermanium (Ge), edla ngokusetyenziswa kuphela kuyoIsikhangeli seefoto(izixhobo zokukhanya), ifuna ukukhula kwe-epitaxial, ngelixa kwiinkqubo ze-InP, kunye ne-passive waveguides kufuneka ilungiswe ngokukhula kwe-epitaxial. Ukukhula kwe-Epitaxial kudla ngokuba noxinzelelo oluphezulu lweziphene kunokukhula kwekristale enye, njengokusuka kwi-crystal ingot. Ii-waveguides ze-InP zinesalathisi esiphezulu se-refractive index kuphela kwi-transverse, ngelixa i-silicon-based waveguides ine-high refractive index index kwi-transverse kunye ne-longitudinal, evumela izixhobo ezisekelwe kwi-silicon ukuba zifezekise i-radii yokugoba encinci kunye nezinye izakhiwo ezihlangeneyo. I-InGaAsP ine-gap yebhendi ngqo, ngelixa i-Si kunye ne-Ge ayinayo. Ngenxa yoko, iinkqubo zezinto ze-InP ziphezulu ngokubhekiselele ekusebenzeni kwe-laser. Ii-oxide zangaphakathi zeenkqubo ze-InP aziqinisekanga kwaye zomelele njengee-oxide zangaphakathi ze-Si, i-silicon dioxide (SiO2). I-Silicon yinto enamandla kune-InP, evumela ukusetyenziswa kweesayizi ezinkulu ze-wafer, okt ukusuka kwi-300 mm (kungekudala iphuculwe ukuya kwi-450 mm) xa kuthelekiswa ne-75 mm kwi-InP. I-InPiimodyulingokuqhelekileyo ixhomekeke kwisiphumo se-quantum-confined Stark, esinobushushu obungamelanga ngenxa yentshukumo ye-band edge ebangelwa bubushushu. Ngokwahlukileyo, ukuxhomekeka kobushushu beemodyuli ezisekelwe kwi-silicon kuncinci kakhulu.

Itekhnoloji ye-Silicon photonics ngokuqhelekileyo ithathwa njengefanelekileyo kuphela kwiimveliso eziphantsi kweendleko eziphantsi, ezimfutshane, ezinomthamo ophezulu (ngaphezu kwe-1 yezigidi zeengcezu ngonyaka). Oku kungenxa yokuba yamkelwe ngokubanzi ukuba isixa esikhulu somthamo we-wafer siyafuneka ukusasaza imaski kunye neendleko zophuhliso, kwaye okoiteknoloji ye-silicon photonicsineziphene ezibalulekileyo zokwenziwa komsebenzi kwimizi-dolophu ukuya kwisixeko kunye nezicelo zemveliso zohambo olude. Noko ke, enyanisweni okwahlukileyo kuyinyaniso. Ngexabiso eliphantsi, uluhlu olufutshane, izicelo eziphezulu zesivuno, i-laser ekhupha umphezulu othe nkqo (VCSEL) kunyelaser-modulated ngqo (DML laser) : i-laser modulated ngqo ibeka uxinzelelo olukhulu lokukhuphisana, kwaye ubuthathaka beteknoloji ye-silicon-based photonic engakwazi ukudibanisa i-lasers ibe yinto engathandekiyo. Ngokwahlukileyo, kwi-metro, izicelo zomgama omde, ngenxa yokukhetha ukudibanisa iteknoloji ye-silicon photonics kunye ne-digital signal processing (DSP) kunye (ehlala ihlala kwindawo yokushisa ephezulu), kunenzuzo ngakumbi ukwahlula i-laser. Ukongeza, itekhnoloji yokufumanisa ehambelanayo inokwenza ukusilela kwetekhnoloji ye-silicon photonics ukuya kwinqanaba elikhulu, njengengxaki yokuba ubumnyama bangoku buncinci kunefoto ye-oscillator yendawo. Kwangaxeshanye, kukwaphosakele ukucinga ukuba isixa esikhulu somthamo we-wafer siyafuneka ukugubungela imaski kunye neendleko zophuhliso, kuba iteknoloji ye-silicon photonics isebenzisa ubungakanani be-node obukhulu kakhulu kuneyona ndlela iphambili ye-metal oxide semiconductors (CMOS), ngoko ke iimaski ezifunekayo kunye nokuqhutywa kwemveliso kunexabiso eliphantsi.