Inkqubela phambili yoPhando lweInGaAs ifotodetector
Ngokukhula okubonakalayo komthamo wothumelo lwedatha yonxibelelwano, itekhnoloji ye-optical interconnection ithathe indawo yetekhnoloji yesiqhelo yokunxibelelana kombane kwaye iye yaba bubuchwephesha obuqhelekileyo bokuhanjiswa kwesantya esiphakathi kunye nomgama omde. Njengenxalenye ephambili yesiphelo sokufumana optical, iifotodetectorineemfuno eziya ziphezulu zokusebenza kwayo ngesantya esiphezulu. Phakathi kwazo, i-waveguide edibeneyo ye-photodetector incinci ngobukhulu, iphezulu kwi-bandwidth, kwaye kulula ukudityaniswa kwi-chip kunye nezinye izixhobo ze-optoelectronic, eyona nto igxile kuphando lwe-photodetection enesantya esiphezulu. kwaye zezona photodetectors ezimele kakhulu kwibhendi yonxibelelwano ekufutshane ne-infrared.
I-InGaAs yenye yezinto ezifanelekileyo zokufikelela kwisantya esiphezulu kunyeii-photodetectors eziphezulu zokuphendula. Okokuqala, i-InGaAs yimpahla ye-semiconductor ye-bandgap ethe ngqo, kwaye ububanzi bayo be-bandgap bunokulawulwa ngumlinganiselo phakathi kwe-In kunye ne-Ga, eyenza ukufunyanwa kwemiqondiso ye-optical ye-wavelengths eyahlukeneyo. Phakathi kwabo, i-In0.53Ga0.47As ihambelana ngokugqibeleleyo ne-InP substrate lattice kwaye ine-coefficient yokukhanya okuphezulu kakhulu kwibhendi yonxibelelwano lwe-optical. Yeyona isetyenziswa kakhulu kulungiselelo lwefotodetector kwaye ikwanowona mbala ubalaseleyo wangoku kunye nokusebenza okuphendulayo. Okwesibini, zombini ii-InGaAs kunye nemathiriyeli ye-InP zinezantya ze-electron zokukhukuliseka eziphezulu, kunye nezantya zazo ze-electron zokukhukuliseka zombini ziphantse zibe yi-1×107cm/s. Okwangoku, phantsi kweendawo ezithile zombane, i-InGaAs kunye ne-InP izixhobo zibonisa iziphumo ze-electron velocity overshoot, kunye ne-overshoot velocities yazo zifikelela kwi-4 × 107cm / s kunye ne-6 × 107cm / s ngokulandelanayo. Kuyanceda ukufezekisa i-bandwidth ephezulu yokuwela. Okwangoku, ii-InGaAs photodetectors zezona zixhobo ziphambili zokufota kunxibelelwano lwamehlo. Ubungakanani obuncinci, okwenzeka ngasemva, kunye ne-high-bandwidth surface surface detectors ziye zaphuhliswa, ngokukodwa ezisetyenziswa kwizicelo ezifana nesantya esiphezulu kunye nokugcwala okuphezulu.
Nangona kunjalo, ngenxa yokulinganiselwa kweendlela zabo zokudibanisa, ii-detectors zeziganeko ezingaphezulu kunzima ukudibanisa nezinye izixhobo ze-optoelectronic. Ke ngoko, ngokunyuka kwemfuno yokudityaniswa kwe-optoelectronic, i-waveguide edityaniswe ne-InGaAs photodetectors esebenza ngokugqwesileyo kwaye ilungele ukudityaniswa ngokuthe ngcembe ibe yinto ekugxilwe kuyo kuphando. Phakathi kwazo, iimodyuli ze-InGaAs ze-photodetector ze-70GHz kunye ne-110GHz phantse zonke zamkela izakhiwo zokudibanisa i-waveguide. Ngokomahluko kwizixhobo ze-substrate, i-waveguide edityaniswe ne-InGaAs photodetectors inokwahlulwa ikakhulu ibe ziindidi ezimbini: INP-based kunye ne-Si-based. I-epitaxial yezinto eziphathekayo kwi-substrates ye-InP inomgangatho ophezulu kwaye ifaneleke ngakumbi ukuveliswa kwezixhobo zokusebenza eziphezulu. Nangona kunjalo, kwizixhobo zeqela le-III-V ezikhuliswe okanye ezibotshelelwe kwii-substrates ze-Si, ngenxa yokungahambelani okwahlukeneyo phakathi kwemathiriyeli ye-InGaAs kunye nee-substrates ze-Si, imathiriyeli okanye umgangatho wojongano ukumgangatho ophantsi, kwaye kusekho indawo enkulu yokuphucula ukusebenza kwezixhobo.
Isixhobo sisebenzisa i-InGaAsP endaweni ye-InP njengesixhobo sommandla wokuncipha. Nangona inciphisa isantya sokutsaleka saturation yee-electron ukuya kumlinganiselo othile, iphucula ukudityaniswa kokukhanya kwesiganeko ukusuka kwisikhokelo samaza ukuya kwindawo yokufunxa. Ngelo xesha, i-InGaAsP ye-N-type yoqhagamshelwano iyasuswa, kwaye i-gap encinci yenziwe kwicala ngalinye le-P-type surface, ngokufanelekileyo ukuphucula ukunyanzeliswa kwintsimi yokukhanya. Kuyanceda ukuba isixhobo sifezekise ukuphendula okuphezulu.
Ixesha lokuposa: Jul-28-2025