Inkqubela yoPhando lwe-InGaAs photodetector

Inkqubela yoPhandoIsixhobo sokubona iifoto se-InGaAs

Ngenxa yokukhula okukhulu komthamo wothumelo lwedatha yonxibelelwano, iteknoloji yothumelo lwe-optical ithathe indawo yeteknoloji yothumelo lwe-optical yendabuko kwaye iye yaba yiteknoloji ephambili yothumelo lwe-high-loss oluphakathi nolude olunesantya esiphantsi. Njengenxalenye ephambili yesiphelo sokufumana i-optical, iisixhobo sokubona iifotoineemfuno eziphezulu ngakumbi zokusebenza kwayo ngesantya esiphezulu. Phakathi kwazo, i-waveguide coupled photodetector incinci ngobukhulu, iphezulu kwi-bandwidth, kwaye kulula ukuyidibanisa kwi-chip nezinye izixhobo ze-optoelectronic, nto leyo egxile kuphando lwe-high-speed photodetection. kwaye zezona zi-photodetectors zibalaseleyo kwi-near-infrared communication band.

I-InGaAs yenye yezona zinto zifanelekileyo zokufikelela kwisantya esiphezulu kunyeii-photodetectors eziphendula ngokukhawulezaOkokuqala, i-InGaAs sisixhobo se-bandgap semiconductor esithe ngqo, kwaye ububanzi bayo be-bandgap bunokulawulwa ngumlinganiselo ophakathi kwe-In kunye ne-Ga, okuvumela ukubonwa kwemiqondiso ye-optical yee-wavelengths ezahlukeneyo. Phakathi kwazo, i-In0.53Ga0.47As ihambelana ngokugqibeleleyo ne-InP substrate lattice kwaye ine-coefficient ephezulu kakhulu yokufunxa ukukhanya kwi-optical communication band. Yeyona isetyenziswa kakhulu ekulungiseleleni i-photodetector kwaye ikwanayo ne-dark current ebalaseleyo kunye nokusebenza kwe-responsivity. Okwesibini, zombini izinto ze-InGaAs kunye ne-InP zinesantya esiphezulu se-electron drift, kunye nesantya sazo se-electron drift esipheleleyo zombini zimalunga ne-1×107cm/s. Okwangoku, phantsi kwamacandelo athile ombane, izinto ze-InGaAs kunye ne-InP zibonisa iziphumo ze-electron velocity overshoot, kunye nesantya sazo overshoot sifikelela kwi-4×107cm/s kunye ne-6×107cm/s ngokwahlukeneyo. Inceda ekufezekiseni i-bandwidth ephezulu yokuwela. Okwangoku, ii-photodetectors ze-InGaAs zezona zi-photodetector ziphambili zonxibelelwano lwe-optical. Kuye kwaveliswa izixhobo zokubona iziganeko zomphezulu ezinobukhulu obuncinci, ezibangela isiganeko esingasemva, nezibangela isantya esiphezulu, ezisetyenziswa kakhulu kwizicelo ezifana nesantya esiphezulu kunye nokwanda kwesantya esiphezulu.

Nangona kunjalo, ngenxa yemida yeendlela zabo zokudibanisa, izixhobo zokubona iziganeko ezingaphaya komhlaba kunzima ukuzidibanisa nezinye izixhobo ze-optoelectronic. Ke ngoko, ngenxa yokwanda kwemfuno yokudibanisa i-optoelectronic, ii-photodetectors ze-InGaAs ezidityaniswe ne-waveguide ezinentsebenzo egqwesileyo kwaye ezifanelekileyo ukuhlanganiswa ziye zaba yindawo ephambili yophando. Phakathi kwazo, iimodyuli ze-photodetector ze-InGaAs zorhwebo ze-70GHz kunye ne-110GHz phantse zonke zisebenzisa izakhiwo zokudibanisa i-waveguide. Ngokweyantlukwano kwizixhobo ze-substrate, ii-photodetectors ze-InGaAs ezidityaniswe ne-waveguide zinokuhlulwahlulwa zibe ziintlobo ezimbini: ezisekwe kwi-INP kunye nezisekwe kwi-Si. Izinto ze-epitaxial kwi-substrates ze-InP zinomgangatho ophezulu kwaye zifanelekile ngakumbi ekwenziweni kwezixhobo ezisebenza kakhulu. Nangona kunjalo, kwizixhobo zeqela le-III-V ezikhuliswe okanye ezibotshelelwe kwi-substrates ze-Si, ngenxa yokungafani okuhlukeneyo phakathi kwezinto ze-InGaAs kunye ne-substrates ze-Si, umgangatho wezinto okanye ujongano uphantsi kakhulu, kwaye kusekho indawo enkulu yokuphucula ukusebenza kwezixhobo.

Esi sixhobo sisebenzisa i-InGaAsP endaweni ye-InP njengesixhobo sokunciphisa umbane. Nangona sinciphisa isantya sokutyibilika kwe-saturation yee-electron ukuya kwinqanaba elithile, siphucula ukudibana kokukhanya kwesiganeko ukusuka kwi-waveguide ukuya kwindawo yokufunxa. Kwangaxeshanye, umaleko woqhagamshelwano wohlobo lwe-InGaAsP N uyasuswa, kwaye kwenziwa umsantsa omncinci kumacala omabini omphezulu wohlobo lwe-P, nto leyo ephucula ngempumelelo umda kwintsimi yokukhanya. Inceda isixhobo ukuba sifumane impendulo ephezulu.